FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IRFH8316TRPBF

IRFH8316TRPBF

MOSFET N-CH 30V 27A/50A 8PQFN

Infineon Technologies

9,219 -
RFQ
IRFH8316TRPBF

Datenblatt

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 50A (Tc) 4.5V, 10V 2.95mOhm @ 20A, 10V 2.2V @ 50µA 59 nC @ 10 V ±20V 3610 pF @ 10 V - 3.6W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
SI2318A

SI2318A

SOT-23 N-CHANNEL POWER MOSFETS R

UMW

2,125 -
RFQ
SI2318A

Datenblatt

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 40 V 4.3A (Ta), 5.6A (Tc) 4.5V, 10V 42mOhm @ 4.3A, 10V 2.5V @ 250µA 9 nC @ 20 V ±20V 340 pF @ 20 V - 1.25W (Ta), 2.1W (Tc) 150°C (TJ) - - Surface Mount SOT-23
IPB093N04LG

IPB093N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies

1,985 -
RFQ
IPB093N04LG

Datenblatt

OptiMOS™ 3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 9.3mOhm @ 50A, 10V 2V @ 77µA 28 nC @ 10 V ±20V 2100 pF @ 20 V - 47W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO-263-3-2
GSFC0304

GSFC0304

MOSFETS, N-CH, SINGLE, 30V, 5.3A

Good-Ark Semiconductor

1,900 -
RFQ
GSFC0304

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 2.5V, 4.5V 36mOhm @ 4A, 4.5V 900mV @ 250µA 12 nC @ 4.5 V ±12V 1000 pF @ 10 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
2SK1591-T2B-A

2SK1591-T2B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

1,755 -
RFQ
2SK1591-T2B-A

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
GT6K2P10IH

GT6K2P10IH

MOSFET P-CH 100V 1A SOT-23

Goford Semiconductor

1,713 -
RFQ
GT6K2P10IH

Datenblatt

SGT TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 10V 670mOhm @ 1A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 253 pF @ 50 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
SFW9530TM

SFW9530TM

MOSFET P-CH 100V 10.5A D2PAK

Fairchild Semiconductor

1,600 -
RFQ
SFW9530TM

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) 10V 300mOhm @ 5.3A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 3.8W (Ta), 66W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
ZVN3320A

ZVN3320A

MOSFET N-CH 200V 0.1A TO92-3

Diodes Incorporated

1,502 -
RFQ

-

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPS80R2K4P7AKMA1

IPS80R2K4P7AKMA1

MOSFET N-CH 800V 2.5A TO251-3

Infineon Technologies

9,755 -
RFQ
IPS80R2K4P7AKMA1

Datenblatt

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 2.4Ohm @ 800mA, 10V 3.5V @ 40µA 7.5 nC @ 10 V ±20V 150 pF @ 500 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPU80R2K4P7AKMA1

IPU80R2K4P7AKMA1

MOSFET N-CH 800V 2.5A TO251-3

Infineon Technologies

3,118 -
RFQ
IPU80R2K4P7AKMA1

Datenblatt

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 2.4Ohm @ 800mA, 10V 3.5V @ 40µA 7.5 nC @ 10 V ±20V 150 pF @ 500 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPP065N03LG

IPP065N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies

1,150 -
RFQ
IPP065N03LG

Datenblatt

CoolMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
NTMFS4C908NAT1G

NTMFS4C908NAT1G

TRENCH 6 30V NCH

onsemi

4,500 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
STD5407NT4G

STD5407NT4G

MOSFET N-CH 40V 7.6A/38A DPAK

onsemi

8,324 -
RFQ
STD5407NT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 7.6A (Ta), 38A (Tc) 5V, 10V 26mOhm @ 20A, 10V 3.5V @ 250µA 20 nC @ 10 V ±20V 1000 pF @ 32 V - 2.9W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NDD05N50Z-1G

NDD05N50Z-1G

MOSFET N-CH 500V 4.7A IPAK

onsemi

6,268 -
RFQ
NDD05N50Z-1G

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.7A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 18.5 nC @ 10 V ±30V 530 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NDF05N50ZG

NDF05N50ZG

MOSFET N-CH 500V 5.5A TO220FP

onsemi

4,369 -
RFQ
NDF05N50ZG

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 632 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SFT1450-TL-H

SFT1450-TL-H

MOSFET N-CH 40V 21A TP-FA

onsemi

9,042 -
RFQ
SFT1450-TL-H

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta) 10V 28mOhm @ 10.5A, 10V 2.6V @ 1mA 14.4 nC @ 10 V ±20V 715 pF @ 20 V - 1W (Ta), 23W (Tc) 150°C (TJ) - - Surface Mount TP-FA
MMSF7N03HDR2

MMSF7N03HDR2

N-CHANNEL POWER MOSFET

onsemi

117,500 -
RFQ
MMSF7N03HDR2

Datenblatt

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
NTMFS4851NT1G

NTMFS4851NT1G

MOSFET N-CH 30V 9.5A/66A 5DFN

onsemi

6,102 -
RFQ
NTMFS4851NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 66A (Tc) 4.5V, 11.5V 5.9mOhm @ 30A, 10V 2.5V @ 250µA 20 nC @ 4.5 V ±16V 1850 pF @ 12 V - 870mW (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDD8586

FDD8586

MOSFET N-CH 20V 35A TO252AA

Fairchild Semiconductor

70,000 -
RFQ
FDD8586

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2480 pF @ 10 V - 77W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
ISL9N315AD3ST

ISL9N315AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

68,479 -
RFQ
ISL9N315AD3ST

Datenblatt

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
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