TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche CMPA601C025F CGHV96100F2 CGHV96130F AP3012KTR-E1 SMBJ43A-13-F DMN4034SSS-13 FMMT495QTA BZX84-B36-QR SD103AW-7-F DFLU1200-7
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTD5N50T4

    NTD5N50T4

    N-CHANNEL POWER MOSFET

    onsemi

    		 5,000 -
    RFQ
    		NTD5N50T4

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQD1N60TM

    FQD1N60TM

    MOSFET N-CH 600V 1A DPAK

    Fairchild Semiconductor

    		 4,980 -
    RFQ
    		FQD1N60TM

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11.5Ohm @ 500mA, 10V 5V @ 250µA 6 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTD6N40T4

    NTD6N40T4

    N-CHANNEL POWER MOSFET

    onsemi

    		 4,960 -
    RFQ
    		NTD6N40T4

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQI5N20TU

    FQI5N20TU

    MOSFET N-CH 200V 4.5A I2PAK

    Fairchild Semiconductor

    		 4,195 -
    RFQ
    		FQI5N20TU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) 10V 1.2Ohm @ 2.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 270 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    FQI3N25TU

    FQI3N25TU

    MOSFET N-CH 250V 2.8A I2PAK

    Fairchild Semiconductor

    		 3,648 -
    RFQ
    		FQI3N25TU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tc) 10V 2.2Ohm @ 1.4A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    IRF610B

    IRF610B

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,625 -
    RFQ
    		IRF610B

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    FQPF7N20

    FQPF7N20

    MOSFET N-CH 200V 4.8A TO220F

    Fairchild Semiconductor

    		 3,159 -
    RFQ
    		FQPF7N20

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 690mOhm @ 2.4A, 10V 5V @ 250µA 10 nC @ 10 V ±30V 400 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IRFR3910

    IRFR3910

    MOSFET N-CH 100V 16A DPAK

    Infineon Technologies

    		 3,070 -
    RFQ
    		IRFR3910

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) - 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V - 640 pF @ 25 V - - - - - Surface Mount TO-252AA (DPAK)
    G5N02L

    G5N02L

    N20V, 5A, RD<18M@10V,VTH0.4V~1.0

    Goford Semiconductor

    		 3,000 -
    RFQ
    		G5N02L

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Tc) 2.5V, 10V 18mOhm @ 4.2A, 10V 1V @ 250µA 11 nC @ 4.5 V ±12V 780 pF @ 10 V - 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    FQI13N06TU

    FQI13N06TU

    MOSFET N-CH 60V 13A I2PAK

    Fairchild Semiconductor

    		 2,534 -
    RFQ
    		FQI13N06TU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13A (Tc) 10V 135mOhm @ 6.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 310 pF @ 25 V - 3.75W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
    FQPF13N06

    FQPF13N06

    MOSFET N-CH 60V 9.4A TO220F

    Fairchild Semiconductor

    		 2,334 -
    RFQ
    		FQPF13N06

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 9.4A (Tc) 10V 135mOhm @ 4.7A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 310 pF @ 25 V - 24W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    FQP17N08

    FQP17N08

    MOSFET N-CH 80V 16.5A TO220-3

    Fairchild Semiconductor

    		 2,331 -
    RFQ
    		FQP17N08

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    FQPF7N20L

    FQPF7N20L

    MOSFET N-CH 200V 5A TO220F

    Fairchild Semiconductor

    		 1,711 -
    RFQ
    		FQPF7N20L

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 5V, 10V 750mOhm @ 2.5A, 10V 2V @ 250µA 9 nC @ 5 V ±20V 500 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    SSS4N60BT

    SSS4N60BT

    TRANS MOSFET N-CH 600V 4A 3PIN(3

    Fairchild Semiconductor

    		 1,534 -
    RFQ
    		SSS4N60BT

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tj) 10V 2.5Ohm @ 2A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    2SK1828TE85LF

    2SK1828TE85LF

    MOSFET N-CH 20V 50MA SC59

    Toshiba Semiconductor and Storage

    		 1,367 -
    RFQ

    -

    		 - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V 1.5V @ 100µA - 10V 5.5 pF @ 3 V - 200mW (Ta) 150°C (TJ) - - Surface Mount SC-59
    HUF75321S3ST

    HUF75321S3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,303 -
    RFQ
    		HUF75321S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FQD17N08LTF

    FQD17N08LTF

    MOSFET N-CH 80V 12.9A TO252

    Fairchild Semiconductor

    		 1,207 -
    RFQ
    		FQD17N08LTF

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 80 V 12.9A (Tc) 5V, 10V 100mOhm @ 6.45A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    PHD108NQ03LT,118

    PHD108NQ03LT,118

    MOSFET N-CH 25V 75A DPAK

    NXP USA Inc.

    		 8,577 -
    RFQ
    		PHD108NQ03LT,118

    Datenblatt

         		TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 75A (Tc) 5V, 10V 6mOhm @ 25A, 10V 2V @ 1mA 16.3 nC @ 4.5 V ±20V 1375 pF @ 12 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    FQP6N25

    FQP6N25

    MOSFET N-CH 250V 5.5A TO220-3

    Fairchild Semiconductor

    		 1,189 -
    RFQ
    		FQP6N25

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 300 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    NTMFS4C906NBT3G

    NTMFS4C906NBT3G

    TRENCH 6 30V NCH

    onsemi

    		 5,000 -
    RFQ

    -

    		 - - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
    Total 36284 Record«Prev1... 392393394395396397398399...1815Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135