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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SFU9130TU

    SFU9130TU

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 5,040 -
    RFQ
    		SFU9130TU

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 9.8A (Tc) 10V 300mOhm @ 4.9A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    HUF76107D3ST

    HUF76107D3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 4,730 -
    RFQ
    		HUF76107D3ST

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±20V 315 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    3400

    3400

    N30V,RD(MAX)<27M@10V,RD(MAX)<33M

    Goford Semiconductor

    		 4,484 -
    RFQ
    		3400

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Tc) 4.5V, 10V 27mOhm @ 3A, 10V 1.3V @ 250µA 16 nC @ 4.5 V ±12V 552 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    G9435S

    G9435S

    P-30V,-5.1A,RD(MAX)<55M@-10V,VTH

    Goford Semiconductor

    		 3,890 -
    RFQ
    		G9435S

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 5.1A (Tc) 4.5V, 10V 55mOhm @ 5.1A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 1040 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    2301

    2301

    P20V,RD(MAX)<[email protected],RD(MAX)<8

    Goford Semiconductor

    		 3,793 -
    RFQ
    		2301

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Tc) 2.5V, 4.5V 56mOhm @ 1.7A, 4.5V 900mV @ 250µA 8.5 nC @ 2.5 V ±12V 640 pF @ 10 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    MTD2N40E

    MTD2N40E

    N-CHANNEL POWER MOSFET

    onsemi

    		 3,230 -
    RFQ
    		MTD2N40E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    ECH8410-TL-H

    ECH8410-TL-H

    MOSFET N-CH 30V 12A 8ECH

    onsemi

    		 2,131 -
    RFQ

    -

    		 - 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4V, 10V 10mOhm @ 6A, 10V - 31 nC @ 10 V ±20V 1700 pF @ 10 V - 1.6W (Ta) 150°C (TJ) - - Surface Mount 8-ECH
    FDV304P-EV

    FDV304P-EV

    MOSFET P-CH 25V SOT23

    EVVO

    		 3,000 -
    RFQ
    		FDV304P-EV

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 2.5V, 4.5V 65mOhm @ 4A, 4.5V 1.3V @ 250µA 9.4 nC @ 4.5 V ±12V 954 pF @ 15 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount SOT-23
    IRF613

    IRF613

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 2,940 -
    RFQ
    		IRF613

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Tc) 10V 2.4Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 135 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    RQJ0603LGDQAWS#H6

    RQJ0603LGDQAWS#H6

    P CH MOS FET POWER SWITCHING

    Renesas Electronics Corporation

    		 2,940 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    IRFU110

    IRFU110

    4.7A 100V 0.540 OHM N-CHANNEL

    Harris Corporation

    		 2,825 -
    RFQ
    		IRFU110

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    SSF3913S

    SSF3913S

    MOSFET, P-CH, SINGLE, -4A, -30V,

    Good-Ark Semiconductor

    		 2,616 -
    RFQ
    		SSF3913S

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Tc) 4.5V, 10V 75mOhm @ 4A, 10V 2.2V @ 250µA 8 nC @ 4.5 V ±20V 810 pF @ 15 V - 1.56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    HUF75307D3ST_NL

    HUF75307D3ST_NL

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,597 -
    RFQ
    		HUF75307D3ST_NL

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTD4970NT4G

    NTD4970NT4G

    MOSFET N-CH 30V 8.5A/36A DPAK

    onsemi

    		 5,054 -
    RFQ
    		NTD4970NT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta), 36A (Tc) 4.5V, 10V 11mOhm @ 30A, 10V 2.5V @ 250µA 8.2 nC @ 4.5 V ±20V 774 pF @ 15 V - 1.38W (Ta), 24.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    SSP1N50B

    SSP1N50B

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,000 -
    RFQ
    		SSP1N50B

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 520 V 1.5A (Tc) 10V 5.3Ohm @ 750mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 340 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    ISL9N310AD3ST_NL

    ISL9N310AD3ST_NL

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,125 -
    RFQ
    		ISL9N310AD3ST_NL

    Datenblatt

         		UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    RFP4N06

    RFP4N06

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 1,079 -
    RFQ
    		RFP4N06

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    NTF3055-160T1

    NTF3055-160T1

    MOSFET N-CH 60V 2A SOT223

    onsemi

    		 8,881 -
    RFQ
    		NTF3055-160T1

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 10V 160mOhm @ 1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 280 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount SOT-223 (TO-261)
    NTD4909N-1G

    NTD4909N-1G

    MOSFET N-CH 30V 8.8A/41A IPAK

    onsemi

    		 3,240 -
    RFQ
    		NTD4909N-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V ±20V 1314 pF @ 15 V - 1.37W (Ta), 29.4W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    EFC4611-TR

    EFC4611-TR

    N-CHANNEL POWER MOSFET

    onsemi

    		 1,570,000 -
    RFQ
    		EFC4611-TR

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
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