FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RFD3N08L

RFD3N08L

N-CHANNEL POWER MOSFET

Harris Corporation

1,346 -
RFQ
RFD3N08L

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 3A (Tc) 5V 800mOhm @ 1.5A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FK4B01120L1

FK4B01120L1

MOSFET N-CH 12V 3.9A ULGA004

Panasonic Electronic Components

2,000 -
RFQ
FK4B01120L1

Datenblatt

- 4-XFLGA, CSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.5V, 4.5V 24mOhm @ 1.5A, 4.5V 1V @ 394µA 7 nC @ 4.5 V ±8V 490 pF @ 10 V - 370mW (Ta) -40°C ~ 85°C (TA) - - Surface Mount ULGA004-W-1010-RA01
2SK4212A-ZK-E1-AY

2SK4212A-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

738,900 -
RFQ
2SK4212A-ZK-E1-AY

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4936NT1G

NTMFS4936NT1G

MOSFET N-CH 30V 11.6A/79A 5DFN

onsemi

6,533 -
RFQ
NTMFS4936NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.6A (Ta), 79A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V 2.2V @ 250µA 43 nC @ 10 V ±20V 3044 pF @ 15 V - 920mW (Ta), 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NTD4855NT4G

NTD4855NT4G

MOSFET N-CH 25V 14A/98A DPAK

onsemi

4,259 -
RFQ
NTD4855NT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 14A (Ta), 98A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 2.5V @ 250µA 32.7 nC @ 4.5 V ±20V 2950 pF @ 12 V - 1.35W (Ta), 66.7W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
FDV302P

FDV302P

MOSFET P-CH 25V 120MA SOT23

onsemi

7,696 -
RFQ
FDV302P

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 25 V 120mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.31 nC @ 4.5 V -8V 11 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
IPL60R2K1C6SATMA1

IPL60R2K1C6SATMA1

MOSFET N-CH 600V 2.3A THIN-PAK

Infineon Technologies

7,703 -
RFQ
IPL60R2K1C6SATMA1

Datenblatt

CoolMOS™ C6 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 21.6W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-2
NTMFS4847NAT1G

NTMFS4847NAT1G

MOSFET N-CH 30V 11.5A/85A 5DFN

onsemi

5,427 -
RFQ
NTMFS4847NAT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta), 85A (Tc) 4.5V, 11.5V 4.1mOhm @ 30A, 10V 2.5V @ 250µA 28 nC @ 4.5 V ±16V 2614 pF @ 12 V - 880mW (Ta), 48.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
ISL9N310AS3ST

ISL9N310AS3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

73,954 -
RFQ
ISL9N310AS3ST

Datenblatt

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 10mOhm @ 62A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
HUF76105SK8T

HUF76105SK8T

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

72,500 -
RFQ
HUF76105SK8T

Datenblatt

UltraFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 50mOhm @ 5.5A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 325 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTMS3P03R2G

NTMS3P03R2G

MOSFET P-CH 30V 2.34A 8SOIC

onsemi

2,029 -
RFQ
NTMS3P03R2G

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.34A (Ta) 4.5V, 10V 85mOhm @ 3.05A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 750 pF @ 24 V - 730mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
ISL9N308AD3

ISL9N308AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

55,575 -
RFQ
ISL9N308AD3

Datenblatt

UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 8mOhm @ 50A, 10V 3V @ 250µA 68 nC @ 10 V ±20V 2600 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4979N-35G

NTD4979N-35G

MOSFET N-CH 30V 9.4A/41A IPAK

onsemi

7,864 -
RFQ
NTD4979N-35G

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.4A (Ta), 41A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.5V @ 250µA 16.5 nC @ 10 V ±20V 837 pF @ 15 V - 1.38W (Ta), 26.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTHD2110TT1G

NTHD2110TT1G

MOSFET P-CH 12V 4.5A CHIPFET

onsemi

7,235 -
RFQ
NTHD2110TT1G

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 4.5A (Ta) 1.8V, 4.5V 40mOhm @ 6.4A, 4.5V 850mV @ 250µA 14 nC @ 4.5 V ±8V 1072 pF @ 6 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
FDU8878

FDU8878

MOSFET N-CH 30V 11A/40A IPAK

Fairchild Semiconductor

41,569 -
RFQ
FDU8878

Datenblatt

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 4.5V, 10V 15mOhm @ 35A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 880 pF @ 15 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
2SK2373ZE-TL-E

2SK2373ZE-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

36,000 -
RFQ
2SK2373ZE-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
3SK298ZP-TL-E

3SK298ZP-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

33,000 -
RFQ
3SK298ZP-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NDB603AL

NDB603AL

MOSFET N-CH 30V 25A D2PAK

Fairchild Semiconductor

30,000 -
RFQ
NDB603AL

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 22mOhm @ 25A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1100 pF @ 15 V - 50W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDFMJ2P023Z

FDFMJ2P023Z

MOSFET P-CH 20V 2.9A SC75 MICROF

Fairchild Semiconductor

29,990 -
RFQ
FDFMJ2P023Z

Datenblatt

PowerTrench® 6-WFDFN Exposed Pad Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.9A (Ta) 1.5V, 4.5V 112mOhm @ 2.9A, 4.5V 1V @ 250µA 6.5 nC @ 4.5 V ±8V 400 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-75, MicroFET
NTD4855NT4H

NTD4855NT4H

N-CHANNEL POWER MOSFET

onsemi

27,500 -
RFQ
NTD4855NT4H

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
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