FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
GT800N10L

GT800N10L

MOSFET N-CH 100V 3.5A SOT-23-3L

Goford Semiconductor

2,598 -
RFQ
GT800N10L

Datenblatt

SGT TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Tc) 4.5V, 10V 80mOhm @ 2A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 209 pF @ 50 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
UPA650TT-E1-A

UPA650TT-E1-A

MOSFET P-CH 12V 5A 6WSOF

Renesas Electronics Corporation

2,440 -
RFQ
UPA650TT-E1-A

Datenblatt

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5A (Ta) - 50mOhm @ 2.5A, 4.5V 1.5V @ 1mA 5.5 nC @ 10 V - 610 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount 6-WSOF
NTMFS5C442NLTWFT1G

NTMFS5C442NLTWFT1G

NTMFS5C442NLTWFT1G

onsemi

6,218 -
RFQ
NTMFS5C442NLTWFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDN304P

FDN304P

MOSFET P-CH 20V 2.4A SOT23

UMW

1,855 -
RFQ
FDN304P

Datenblatt

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
NTMFS4C910NAT1G

NTMFS4C910NAT1G

TRENCH 6 30V NCH

onsemi

7,500 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTD70N03R

NTD70N03R

MOSFET N-CH 25V 10A/32A DPAK

onsemi

4,704 -
RFQ
NTD70N03R

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10A (Ta), 32A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 5 V ±20V 1333 pF @ 20 V - 1.36W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTD70N03R-001

NTD70N03R-001

MOSFET N-CH 25V 10A/32A IPAK

onsemi

2,867 -
RFQ
NTD70N03R-001

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10A (Ta), 32A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 5 V ±20V 1333 pF @ 20 V - 1.36W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTB23N03RG

NTB23N03RG

MOSFET N-CH 25V 23A D2PAK

onsemi

6,222 -
RFQ
NTB23N03RG

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 23A (Ta) 4.5V, 10V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 37.5W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
G45P40T

G45P40T

MOSFET P-CH 40V 45A TO-220

Goford Semiconductor

13,000 -
RFQ
G45P40T

Datenblatt

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 45A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2.5V @ 250µA - ±20V - - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
FDFM2P110

FDFM2P110

MOSFET P-CH 20V 3.5A MICROFET

onsemi

4,511 -
RFQ
FDFM2P110

Datenblatt

PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 140mOhm @ 3.5A, 4.5V 1.5V @ 250µA 4 nC @ 4.5 V ±12V 280 pF @ 10 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount MicroFET 3x3mm
IRF730B

IRF730B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

238,000 -
RFQ
IRF730B

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 2.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTMFS4837NT1G

NTMFS4837NT1G

MOSFET N-CH 30V 10A/74A 5DFN

onsemi

9,887 -
RFQ
NTMFS4837NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 74A (Tc) 4.5V, 11.5V 5mOhm @ 30A, 10V 2.5V @ 250µA 22 nC @ 4.5 V ±20V 2048 pF @ 12 V - 880mW (Ta), 47.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
NTMFS4744NT1G

NTMFS4744NT1G

MOSFET N-CH 30V 7A 5DFN

onsemi

9,903 -
RFQ
NTMFS4744NT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 11.5V 7.6mOhm @ 30A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 12 V - 880mW (Ta), 47.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
FDZ204P

FDZ204P

MOSFET P-CH 20V 4.5A 9BGA

Fairchild Semiconductor

152,334 -
RFQ
FDZ204P

Datenblatt

PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V 1.5V @ 250µA 13 nC @ 4.5 V ±12V 884 pF @ 10 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-BGA (2x2.1)
ATP101-V-TL-H

ATP101-V-TL-H

MOSFET P-CH 30V 25A ATPAK

onsemi

9,857 -
RFQ

-

- ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete P-Channel - - 25A (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount ATPAK
FDU8780

FDU8780

MOSFET N-CH 25V 35A IPAK

Fairchild Semiconductor

81,309 -
RFQ
FDU8780

Datenblatt

PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1440 pF @ 13 V - 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FDFS6N303

FDFS6N303

MOSFET N-CH 30V 6A 8SOIC

Fairchild Semiconductor

74,265 -
RFQ
FDFS6N303

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 35mOhm @ 6A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 350 pF @ 15 V Schottky Diode (Isolated) 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTMS4917NR2G

NTMS4917NR2G

MOSFET N-CH 30V 7.1A 8SOIC

onsemi

9,573 -
RFQ
NTMS4917NR2G

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.1A (Ta) 4.5V, 10V 11mOhm @ 11A, 10V 2.5V @ 250µA 15.6 nC @ 4.5 V ±20V 1054 pF @ 25 V - 880mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
ECH8419-TL-H

ECH8419-TL-H

MOSFET N-CH 35V 9A 8ECH

onsemi

8,296 -
RFQ

-

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35 V 9A (Ta) 4V, 10V 17mOhm @ 5A, 10V 2.6V @ 1mA 19 nC @ 10 V ±20V 960 pF @ 20 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount 8-ECH
SFU9214TU

SFU9214TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

56,998 -
RFQ
SFU9214TU

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 1.53A (Tc) 10V 4Ohm @ 770mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 295 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
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