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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RFP2N10

    RFP2N10

    N-CHANNEL, MOSFET

    Harris Corporation

    		 1,323 -
    RFQ
    		RFP2N10

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    BSP88E6327

    BSP88E6327

    MOSFET N-CH 240V 350MA SOT223-4

    Infineon Technologies

    		 5,809 -
    RFQ
    		BSP88E6327

    Datenblatt

         		SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 2.8V, 4.5V 6Ohm @ 350mA, 10V 1.4V @ 108µA 6.8 nC @ 10 V ±20V 95 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
    NTHS5443T1G

    NTHS5443T1G

    MOSFET P-CH 20V 3.6A CHIPFET

    onsemi

    		 6,142 -
    RFQ
    		NTHS5443T1G

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 3.6A, 4.5V 600mV @ 250µA (Min) 12 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
    SFR9224TM

    SFR9224TM

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 307,692 -
    RFQ
    		SFR9224TM

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 2.5A (Tc) 10V 2.4Ohm @ 1.3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 540 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTLJS4149PTBG

    NTLJS4149PTBG

    MOSFET P-CH 30V 2.7A 6WDFN

    onsemi

    		 3,281 -
    RFQ
    		NTLJS4149PTBG

    Datenblatt

         		- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 2.5V, 4.5V 62mOhm @ 4.5A, 4.5V 1V @ 250µA 15 nC @ 4.5 V ±12V 960 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
    SFU9224TU

    SFU9224TU

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 273,525 -
    RFQ
    		SFU9224TU

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 2.5A (Tc) 10V 2.4Ohm @ 1.3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 540 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    NDF05N50ZH

    NDF05N50ZH

    MOSFET N-CH 500V 5.5A TO220FP

    onsemi

    		 3,980 -
    RFQ
    		NDF05N50ZH

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 632 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
    IPU60R2K0C6BKMA1

    IPU60R2K0C6BKMA1

    MOSFET N-CH 600V 2.4A TO251-3

    Infineon Technologies

    		 8,057 -
    RFQ
    		IPU60R2K0C6BKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPS70R1K4CEAKMA1

    IPS70R1K4CEAKMA1

    MOSFET N-CH 700V 5.4A TO251

    Infineon Technologies

    		 2,344 -
    RFQ
    		IPS70R1K4CEAKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 5.4A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 53W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
    SFR9224TF

    SFR9224TF

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 167,865 -
    RFQ
    		SFR9224TF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 2.5A (Tc) 10V 2.4Ohm @ 1.3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 540 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUF76013D3ST

    HUF76013D3ST

    MOSFET N-CH 20V 20A TO252AA

    Fairchild Semiconductor

    		 150,700 -
    RFQ
    		HUF76013D3ST

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 624 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    UPA507TE-T1-AT

    UPA507TE-T1-AT

    P-CHANNEL MOSFET

    Renesas Electronics Corporation

    		 141,000 -
    RFQ
    		UPA507TE-T1-AT

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    NDF04N60ZH

    NDF04N60ZH

    MOSFET N-CH 600V 4.8A TO220FP

    onsemi

    		 9,552 -
    RFQ
    		NDF04N60ZH

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.8A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
    VN10KC-T1

    VN10KC-T1

    SMALL SIGNAL N-CHANNEL MOSFET

    Siliconix

    		 57,811 -
    RFQ
    		VN10KC-T1

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQD4N25TM-WS

    FQD4N25TM-WS

    MOSFET N-CH 250V 3A DPAK

    onsemi

    		 6,726 -
    RFQ
    		FQD4N25TM-WS

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3A (Tc) 10V 1.75Ohm @ 1.5A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NDS352P

    NDS352P

    MOSFET P-CH 20V 850MA SUPERSOT3

    Fairchild Semiconductor

    		 28,035 -
    RFQ
    		NDS352P

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 850mA (Ta) 4.5V, 10V 350mOhm @ 1A, 10V 2.5V @ 250µA 4 nC @ 5 V ±12V 125 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    PHK12NQ03LT,518

    PHK12NQ03LT,518

    MOSFET N-CH 30V 11.8A 8SO

    Nexperia USA Inc.

    		 2,977 -
    RFQ
    		PHK12NQ03LT,518

    Datenblatt

         		TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.8A (Tj) 4.5V, 10V 10.5mOhm @ 12A, 10V 2V @ 250µA 17.6 nC @ 5 V ±20V 1335 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    CPH6411-TL-E

    CPH6411-TL-E

    N-CHANNL SILICON MOSFET FOR ULTR

    Sanyo

    		 24,000 -
    RFQ

    -

    		 - SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) - 20mOhm @ 3A, 4.5V - 13 nC @ 4.5 V - 1200 pF @ 10 V - 1.6W (Ta) 150°C (TJ) - - Surface Mount 6-CPH
    NTD30N02T4G

    NTD30N02T4G

    N-CHANNEL POWER MOSFET

    onsemi

    		 22,500 -
    RFQ
    		NTD30N02T4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 24 V 30A (Ta) 4.5V, 10V 14.5mOhm @ 30A, 10V 3V @ 250µA 20 nC @ 4.5 V ±20V 1000 pF @ 20 V - 75W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    3SK324UG-TL-H

    3SK324UG-TL-H

    DUAL N-CHANNEL MOSFET

    Renesas Electronics Corporation

    		 16,727 -
    RFQ
    		3SK324UG-TL-H

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
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