FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NTD4863NT4G

NTD4863NT4G

MOSFET N-CH 25V 9.2A/49A DPAK

onsemi

7,526 -
RFQ
NTD4863NT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.2A (Ta), 49A (Tc) 4.5V, 10V 9.3mOhm @ 30A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V ±20V 990 pF @ 12 V - 1.27W (Ta), 36.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NDF02N60ZG

NDF02N60ZG

MOSFET N-CH 600V 2.4A TO220FP

onsemi

6,591 -
RFQ
NDF02N60ZG

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 10.1 nC @ 10 V ±30V 274 pF @ 25 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
NTD4863NAT4G

NTD4863NAT4G

MOSFET N-CH 25V 9.2A/49A DPAK

onsemi

8,377 -
RFQ
NTD4863NAT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.2A (Ta), 49A (Tc) - 9.3mOhm @ 30A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V - 990 pF @ 12 V - 1.27W (Ta), 36.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTB90N02T4

NTB90N02T4

MOSFET N-CH 24V 90A D2PAK

onsemi

4,113 -
RFQ
NTB90N02T4

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 90A (Ta) 4.5V, 10V 5.8mOhm @ 90A, 10V 3V @ 250µA 29 nC @ 4.5 V ±20V 2120 pF @ 20 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
FDZ202P

FDZ202P

MOSFET P-CH 20V 5.5A 12BGA

Fairchild Semiconductor

138,547 -
RFQ
FDZ202P

Datenblatt

PowerTrench® 12-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 2.5V, 4.5V 45mOhm @ 5.5A, 4.5V 1.5V @ 250µA 13 nC @ 4.5 V ±12V 884 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 12-BGA (2x2.5)
ISL9N312AD3ST

ISL9N312AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

136,310 -
RFQ
ISL9N312AD3ST

Datenblatt

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
NTTFS4929NTAG

NTTFS4929NTAG

MOSFET N-CH 30V 6.6A/34A 8WDFN

onsemi

9,436 -
RFQ

-

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.6A (Ta), 34A(Tc) 4.5V, 10V 11mOhm @ 10A, 10V 2.2V @ 250µA 8.8 nC @ 4.5 V ±20V 920 pF @ 15 V - 810mW (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
MMDF2N05ZR2

MMDF2N05ZR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

87,765 -
RFQ
MMDF2N05ZR2

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
BSP324L6327

BSP324L6327

N-CHANNEL POWER MOSFET

Infineon Technologies

80,249 -
RFQ
BSP324L6327

Datenblatt

SIPMOS® TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 170mA (Ta) 4.5V, 10V 25Ohm @ 170mA, 10V 2.3V @ 94µA 5.9 nC @ 10 V ±20V 154 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
NTD3808NT4G

NTD3808NT4G

MOSFET N-CH 16V 12A/76A DPAK

onsemi

8,839 -
RFQ
NTD3808NT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16 V 12A (Ta), 76A (Tc) 4.5V, 10V 5.8mOhm @ 15A, 10V 2.5V @ 250µA 21 nC @ 4.5 V ±16V 1660 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BSH207,135

BSH207,135

MOSFET P-CH 12V 1.52A 6TSOP

NXP USA Inc.

50,873 -
RFQ
BSH207,135

Datenblatt

- SC-74, SOT-457 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.52A (Ta) 1.8V, 4.5V 120mOhm @ 1A, 4.5V 600mV @ 1mA (Typ) 8.8 nC @ 4.5 V ±8V 500 pF @ 9.6 V - 417mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
NTLJS2103PTAG

NTLJS2103PTAG

MOSFET P-CH 12V 3.5A 6WDFN

onsemi

5,889 -
RFQ
NTLJS2103PTAG

Datenblatt

- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.5A (Ta) 1.2V, 4.5V 40mOhm @ 3A, 4.5V 800mV @ 250µA 15 nC @ 4.5 V ±8V 1157 pF @ 6 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
FDZ493P

FDZ493P

MOSFET P-CH 20V 4.6A 9BGA

Fairchild Semiconductor

45,000 -
RFQ
FDZ493P

Datenblatt

PowerTrench® 9-WFBGA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 2.5V, 4.5V 46mOhm @ 4.6A, 4.5V 1.5V @ 250µA 11 nC @ 4.5 V ±12V 754 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-BGA (1.55x1.55)
FDFME2P823ZT

FDFME2P823ZT

2.6A, 20V, P-CHANNEL MOSFET

Fairchild Semiconductor

40,000 -
RFQ
FDFME2P823ZT

Datenblatt

PowerTrench® 6-UFDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.8V, 4.5V 142mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7 nC @ 4.5 V ±8V 405 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (1.6x1.6)
BSP603S2LNT

BSP603S2LNT

N-CHANNEL POWER MOSFET

Infineon Technologies

30,123 -
RFQ
BSP603S2LNT

Datenblatt

OptiMOS™ TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 5.2A (Ta) 4.5V, 10V 33mOhm @ 2.6A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1390 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
MGSF3455XT1

MGSF3455XT1

P-CHANNEL MOSFET

onsemi

25,315 -
RFQ
MGSF3455XT1

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
MGSF3454XT1

MGSF3454XT1

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

25,000 -
RFQ
MGSF3454XT1

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFS730B

IRFS730B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

23,487 -
RFQ
IRFS730B

Datenblatt

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tj) 10V 1Ohm @ 2.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDMC4436BZ

FDMC4436BZ

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

23,228 -
RFQ
FDMC4436BZ

Datenblatt

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
NTD4965N-35G

NTD4965N-35G

MOSFET N-CH 30V 13A/68A IPAK

onsemi

8,926 -
RFQ
NTD4965N-35G

Datenblatt

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 68A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.5V @ 250µA 17.2 nC @ 4.5 V ±20V 1710 pF @ 15 V - 1.39W (Ta), 38.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
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