FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RFP2N08

RFP2N08

N-CHANNEL, MOSFET

Harris Corporation

3,360 -
RFQ
RFP2N08

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 2A (Tc) 10V 1.05Ohm @ 2A, 5V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTD32N06-1G

NTD32N06-1G

MOSFET N-CH 60V 32A IPAK

onsemi

4,647 -
RFQ
NTD32N06-1G

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta) 10V 26mOhm @ 16A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1725 pF @ 25 V - 1.5W (Ta), 93.75W (Tj) -55°C ~ 175°C (TJ) - - Through Hole IPAK
CPH6332-TL-E

CPH6332-TL-E

PCH 1.8V DRIVE SERIES

onsemi

3,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MGSF3433VT1

MGSF3433VT1

PFET TSOP6S 20V 0.098R TR

Motorola

2,800 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
BSO065N03MSG

BSO065N03MSG

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

2,500 -
RFQ
BSO065N03MSG

Datenblatt

OptiMOS™ 3 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 40 nC @ 10 V ±20V 3100 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
RW1A025APT2CR

RW1A025APT2CR

MOSFET P-CH 12V 2.5A WEMT6

Rohm Semiconductor

2,465 -
RFQ
RW1A025APT2CR

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 2.5A (Ta) 1.5V, 4.5V 62mOhm @ 2.5A, 4.5V 1V @ 1mA 16 nC @ 4.5 V -8V 2000 pF @ 6 V - 400mW (Ta) 150°C (TJ) - - Surface Mount 6-WEMT
NVD5490NLT4G-VF01

NVD5490NLT4G-VF01

MOSFET N-CH 60V 5A/17A DPAK

onsemi

6,161 -
RFQ
NVD5490NLT4G-VF01

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta), 17A (Tc) 4.5V, 10V 64mOhm @ 9A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 365 pF @ 25 V - 3.4W (Ta), 49W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
SFR2955TF

SFR2955TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,000 -
RFQ
SFR2955TF

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 7.6A (Tc) 10V 300mOhm @ 3.8A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FDFMA3P029Z

FDFMA3P029Z

MOSFET P-CH 30V 3.3A 6MICROFET

Fairchild Semiconductor

1,964 -
RFQ
FDFMA3P029Z

Datenblatt

PowerTrench® 6-WDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta) - 87mOhm @ 3.3A, 10V 3V @ 250µA 10 nC @ 10 V - 435 pF @ 15 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MLP (2x2)
IRFW820BTM

IRFW820BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,574 -
RFQ
IRFW820BTM

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.6Ohm @ 1.25A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 610 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI4835DY

SI4835DY

P-CHANNEL MOSFET

Fairchild Semiconductor

1,298 -
RFQ
SI4835DY

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 20mOhm @ 8.8A, 10V 3V @ 250µA 27 nC @ 10 V ±25V 1680 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
HUFA76409D3S

HUFA76409D3S

MOSFET N-CH 60V 18A TO252AA

Fairchild Semiconductor

1,222 -
RFQ
HUFA76409D3S

Datenblatt

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NTMFS4C910NBT3G

NTMFS4C910NBT3G

TRENCH 6 30V NCH

onsemi

5,000 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NDF02N60ZH

NDF02N60ZH

MOSFET N-CH 600V 2.4A TO220FP

onsemi

6,865 -
RFQ
NDF02N60ZH

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 16 nC @ 10 V ±30V 325 pF @ 25 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
NTD4813NHT4G

NTD4813NHT4G

MOSFET N-CH 30V 7.6A/40A DPAK

onsemi

5,843 -
RFQ
NTD4813NHT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
PMN70XPEAX

PMN70XPEAX

MOSFET P-CH 20V 3.2A 6TSOP

Nexperia USA Inc.

6,621 -
RFQ
PMN70XPEAX

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.5V, 4.5V 85mOhm @ 2A, 4.5V 1.25V @ 250µA 7.8 nC @ 4.5 V ±12V 602 pF @ 10 V - 500mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
3SK295ZQ-TL-E

3SK295ZQ-TL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

36,000 -
RFQ
3SK295ZQ-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA621TT-E1-A

UPA621TT-E1-A

MOSFET N-CH 20V 5A 6WSOF

Renesas Electronics Corporation

30,000 -
RFQ
UPA621TT-E1-A

Datenblatt

- 6-SMD, Flat Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) - 50mOhm @ 2.5A, 4.5V 1.5V @ 1mA 3.3 nC @ 4 V - 270 pF @ 10 V - 200mW (Ta) 150°C (TJ) - - Surface Mount 6-WSOF
2SJ243(0)-T1-A

2SJ243(0)-T1-A

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

16,000 -
RFQ
2SJ243(0)-T1-A

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
GSFF0308

GSFF0308

MOSFET, N-CH, SINGLE, 780MA, 30V

Good-Ark Semiconductor

15,890 -
RFQ
GSFF0308

Datenblatt

- SOT-723 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 780mA (Ta) 2.5V, 4.5V 450mOhm @ 300mA, 4.5V 1.2V @ 250µA 5.2 nC @ 4.5 V ±12V 146 pF @ 15 V - 446mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-723
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