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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI3139KL3A-TP

    SI3139KL3A-TP

    P-CHANNEL MOSFET,DFN1006-3

    Micro Commercial Co

    		 12,304 -
    RFQ
    		SI3139KL3A-TP

    Datenblatt

         		- SC-101, SOT-883 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 650mA 1.8V, 4.5V 850mOhm @ 500mA, 4.5V 1.2V @ 250µA 0.86 nC @ 4.5 V ±12V 40 pF @ 16 V - 900mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1006-3
    2SJ451ZK-TL-E

    2SJ451ZK-TL-E

    P-CHANNEL SMALL SIGNAL MOSFET

    Renesas Electronics Corporation

    		 12,000 -
    RFQ
    		2SJ451ZK-TL-E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    NVD4809NT4G

    NVD4809NT4G

    MOSFET N-CH 30V 9.6A/58A DPAK-3

    onsemi

    		 5,574 -
    RFQ
    		NVD4809NT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 25 nC @ 11.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
    BUK7535-55A,127

    BUK7535-55A,127

    PFET, 35A I(D), 55V, 0.035OHM, 1

    NXP USA Inc.

    		 9,896 -
    RFQ
    		BUK7535-55A,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 35mOhm @ 20A, 10V 4V @ 1mA - ±20V 872 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    FQD4N20TM

    FQD4N20TM

    POWER FIELD-EFFECT TRANSISTOR, 3

    onsemi

    		 9,174 -
    RFQ
    		FQD4N20TM

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 1.4Ohm @ 1.5A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    FDMS7698

    FDMS7698

    POWER FIELD-EFFECT TRANSISTOR, 1

    Fairchild Semiconductor

    		 7,000 -
    RFQ
    		FDMS7698

    Datenblatt

         		PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1605 pF @ 15 V - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    GSF0304

    GSF0304

    MOSFET, P-CH, SINGLE, -4.1A, -30

    Good-Ark Semiconductor

    		 5,955 -
    RFQ
    		GSF0304

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 4.5V, 10V 65mOhm @ 4.1A, 10V 2.1V @ 250µA 13 nC @ 10 V ±20V 650 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    FDS6690A-NBNP006

    FDS6690A-NBNP006

    SINGLE N-CHANNEL, LOGIC LEVEL, P

    Fairchild Semiconductor

    		 5,311 -
    RFQ
    		FDS6690A-NBNP006

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 16 nC @ 5 V ±20V 1205 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    PSMN005-30K,518

    PSMN005-30K,518

    MOSFET N-CH 30V 20A 8SO

    Nexperia USA Inc.

    		 6,008 -
    RFQ
    		PSMN005-30K,518

    Datenblatt

         		TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 5.5mOhm @ 15A, 10V 3V @ 1mA 34 nC @ 4.5 V ±20V 3100 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FDV304P-CGB8

    FDV304P-CGB8

    MOSFET P-CHANNEL

    onsemi

    		 3,318 -
    RFQ

    -

    		 - - Tape & Reel (TR) Obsolete - - - 460mA (Tj) - - - - - - - - - - - - -
    2SJ243-T1-A

    2SJ243-T1-A

    MOSFET P-CH 30V 100MA SC75-3 USM

    Renesas Electronics Corporation

    		 1,622 -
    RFQ
    		2SJ243-T1-A

    Datenblatt

         		- SC-75, SOT-416 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 25Ohm @ 10mA, 4V 2.3V @ 10µA - - 16 pF @ 5 V - - - - - Surface Mount SC-75-3, USM
    NTMFS4839NHT1G

    NTMFS4839NHT1G

    MOSFET N-CH 30V 9.5A/64A 5DFN

    onsemi

    		 4,569 -
    RFQ
    		NTMFS4839NHT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 64A (Tc) 4.5V, 11.5V 5.5mOhm @ 30A, 10V 2.5V @ 250µA 43.5 nC @ 11.5 V ±20V 2354 pF @ 12 V - 870mW (Ta), 42.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    FDMA8884

    FDMA8884

    MOSFET N-CH 30V 6.5/8A 6MICROFET

    onsemi

    		 2,889 -
    RFQ
    		FDMA8884

    Datenblatt

         		PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta), 8A (Tc) 4.5V, 10V 23mOhm @ 6.5A, 10V 3V @ 250µA 7.5 nC @ 10 V ±20V 450 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
    NTTFS4928NTWG

    NTTFS4928NTWG

    MOSFET N-CH 30V 7.3A/37A 8WDFN

    onsemi

    		 6,741 -
    RFQ
    		NTTFS4928NTWG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Ta), 37A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.2V @ 250µA 8 nC @ 4.5 V ±20V 913 pF @ 15 V - 810mW (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    FDFS2P753Z

    FDFS2P753Z

    MOSFET P-CH 30V 3A 8SOIC

    Fairchild Semiconductor

    		 389,380 -
    RFQ
    		FDFS2P753Z

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 115mOhm @ 3A, 10V 3V @ 250µA 9.3 nC @ 10 V ±25V 455 pF @ 10 V Schottky Diode (Isolated) 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CPH3438-TL-E

    CPH3438-TL-E

    NCH 4V DRIVE SERIES

    onsemi

    		 312,000 -
    RFQ
    		CPH3438-TL-E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    NDD02N60Z-1G

    NDD02N60Z-1G

    MOSFET N-CH 600V 2.2A IPAK

    onsemi

    		 7,036 -
    RFQ
    		NDD02N60Z-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 10.1 nC @ 10 V ±30V 274 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    NTD85N02R-1G

    NTD85N02R-1G

    MOSFET N-CH 24V 12A/85A IPAK

    onsemi

    		 4,957 -
    RFQ
    		NTD85N02R-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2V @ 250µA 17.7 nC @ 5 V ±20V 2050 pF @ 20 V - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    ISL9N312AD3

    ISL9N312AD3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 209,433 -
    RFQ
    		ISL9N312AD3

    Datenblatt

         		UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTD4863N-35G

    NTD4863N-35G

    MOSFET N-CH 25V 9.2A/49A IPAK

    onsemi

    		 9,679 -
    RFQ
    		NTD4863N-35G

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.2A (Ta), 49A (Tc) 4.5V, 10V 9.3mOhm @ 30A, 10V 2.5V @ 250µA 13.5 nC @ 4.5 V ±20V 990 pF @ 12 V - 1.27W (Ta), 36.6W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
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