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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SSF2311S

    SSF2311S

    MOSFET, P-CH, SINGLE, -4.7A, -20

    Good-Ark Semiconductor

    		 5,793 -
    RFQ
    		SSF2311S

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Tc) 1.8V, 4.5V 50mOhm @ 3A, 4.5V - 13 nC @ 4.5 V ±10V 1230 pF @ 10 V - 1.56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    NTD4857NA-1G

    NTD4857NA-1G

    MOSFET N-CH 25V 12A/78A IPAK

    onsemi

    		 4,306 -
    RFQ

    -

    		 - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 78A (Tc) - 5.7mOhm @ 30A, 10V 2.5V @ 250µA 32 nC @ 10 V - 1960 pF @ 12 V - - -55°C ~ 175°C (TJ) - - Through Hole IPAK
    HUF76013P3

    HUF76013P3

    MOSFET N-CH 20V 20A TO220-3

    Fairchild Semiconductor

    		 5,326 -
    RFQ
    		HUF76013P3

    Datenblatt

         		UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 624 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    FQP9N08L

    FQP9N08L

    MOSFET N-CH 80V 9.3A TO220-3

    Fairchild Semiconductor

    		 5,169 -
    RFQ
    		FQP9N08L

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 5V, 10V 210mOhm @ 4.65A, 10V 5V @ 250µA 6.1 nC @ 5 V ±20V 280 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    BUZ101L

    BUZ101L

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 5,075 -
    RFQ
    		BUZ101L

    Datenblatt

         		- - Bulk Active - - - - - - - - - - - - - - - - -
    NTD4810NHT4G

    NTD4810NHT4G

    MOSFET N-CH 30V 9A/54A DPAK

    onsemi

    		 6,951 -
    RFQ
    		NTD4810NHT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    STD1063T4

    STD1063T4

    NFET DPAK SPCL 500V TR

    onsemi

    		 5,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    BSS84

    BSS84

    50V 130MA 300MW 10R@5V,100MA 2V@

    UMW

    		 4,500 -
    RFQ
    		BSS84

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V 10Ohm @ 100mA, 5V 2V @ 1mA - ±20V 45 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    IRFU330BTU

    IRFU330BTU

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 4,090 -
    RFQ
    		IRFU330BTU

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    MMDF7N02ZR2

    MMDF7N02ZR2

    SMALL SIGNAL N-CHANNEL MOSFET

    onsemi

    		 3,464 -
    RFQ
    		MMDF7N02ZR2

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQP9N08

    FQP9N08

    MOSFET N-CH 80V 9.3A TO220-3

    Fairchild Semiconductor

    		 3,153 -
    RFQ
    		FQP9N08

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 9.3A (Tc) 10V 210mOhm @ 4.65A, 10V 4V @ 250µA 7.7 nC @ 10 V ±25V 250 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    FQP4N25

    FQP4N25

    MOSFET N-CH 250V 3.6A TO220-3

    Fairchild Semiconductor

    		 2,950 -
    RFQ
    		FQP4N25

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.6A (Tc) 10V 1.75Ohm @ 1.8A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    NTB4302T4

    NTB4302T4

    MOSFET N-CH 30V 74A D2PAK

    onsemi

    		 3,836 -
    RFQ
    		NTB4302T4

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 74A (Tc) 4.5V, 10V 9.3mOhm @ 37A, 10V 3V @ 250µA 28 nC @ 4.5 V ±20V 2400 pF @ 24 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    IPSA70R750P7SAKMA1

    IPSA70R750P7SAKMA1

    MOSFET N-CH 700V 6.5A TO251-3

    Infineon Technologies

    		 4,326 -
    RFQ
    		IPSA70R750P7SAKMA1

    Datenblatt

         		CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 6.5A (Tc) 10V 750mOhm @ 1.4A, 10V 3.5V @ 70µA 8.3 nC @ 400 V ±16V 306 pF @ 400 V - 34.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    NDD03N50Z-1G

    NDD03N50Z-1G

    MOSFET N-CH 500V 2.6A IPAK

    onsemi

    		 8,122 -
    RFQ
    		NDD03N50Z-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 10V 3.3Ohm @ 1.15A, 10V 4.5V @ 50µA 10 nC @ 10 V ±30V 274 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    NTD4857NAT4G

    NTD4857NAT4G

    MOSFET N-CH 25V 12A/78A DPAK

    onsemi

    		 2,500 -
    RFQ

    -

    		 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 78A (Tc) - 5.7mOhm @ 30A, 10V 2.5V @ 250µA 24 nC @ 4.5 V - 1960 pF @ 12 V - - -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    FDU6676AS

    FDU6676AS

    MOSFET N-CH 30V 90A IPAK

    Fairchild Semiconductor

    		 1,708 -
    RFQ
    		FDU6676AS

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Ta) 4.5V, 10V 5.8mOhm @ 16A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 2470 pF @ 15 V - 70W (Ta) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    NTB4302G

    NTB4302G

    MOSFET N-CH 30V 74A D2PAK

    onsemi

    		 9,635 -
    RFQ
    		NTB4302G

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 74A (Tc) 4.5V, 10V 9.3mOhm @ 37A, 10V 3V @ 250µA 28 nC @ 4.5 V ±20V 2400 pF @ 24 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    HUF75309D3S

    HUF75309D3S

    MOSFET N-CH 55V 19A DPAK

    Fairchild Semiconductor

    		 1,687 -
    RFQ
    		HUF75309D3S

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) - 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    IRFW720BTM

    IRFW720BTM

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,600 -
    RFQ
    		IRFW720BTM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
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