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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFW740BTM

    IRFW740BTM

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 70,400 -
    RFQ
    		IRFW740BTM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 540mOhm @ 5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    PHD71NQ03LT,118

    PHD71NQ03LT,118

    TRANSISTOR >30MHZ

    NXP USA Inc.

    		 64,782 -
    RFQ
    		PHD71NQ03LT,118

    Datenblatt

         		TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 10mOhm @ 25A, 10V 2.5V @ 1mA 13.2 nC @ 5 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    ATP201-V-TL-H

    ATP201-V-TL-H

    MOSFET N-CH 30V 35A ATPAK

    onsemi

    		 2,420 -
    RFQ

    -

    		 - ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete - - - 35A (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount ATPAK
    NDF04N60ZG

    NDF04N60ZG

    MOSFET N-CH 600V 4.8A TO220FP

    onsemi

    		 4,050 -
    RFQ
    		NDF04N60ZG

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.8A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    NTD4904N-35G

    NTD4904N-35G

    MOSFET N-CH 30V 13A/79A IPAK

    onsemi

    		 2,992 -
    RFQ
    		NTD4904N-35G

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 79A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2.2V @ 250µA 41 nC @ 10 V ±20V 3052 pF @ 15 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTD4970N-35G

    NTD4970N-35G

    MOSFET N-CH 30V 8.5A/36A IPAK

    onsemi

    		 8,810 -
    RFQ
    		NTD4970N-35G

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta), 36A (Tc) 4.5V, 10V 11mOhm @ 30A, 10V 2.5V @ 250µA 8.2 nC @ 4.5 V ±20V 774 pF @ 15 V - 1.38W (Ta), 24.6W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    HUFA75309T3ST

    HUFA75309T3ST

    MOSFET N-CH 55V 3A SOT223-4

    Fairchild Semiconductor

    		 34,459 -
    RFQ
    		HUFA75309T3ST

    Datenblatt

         		UltraFET™ TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3A (Ta) 10V 70mOhm @ 3A, 10V 4V @ 250µA 23 nC @ 20 V ±20V 352 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
    ISL9N306AS3ST

    ISL9N306AS3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 33,931 -
    RFQ
    		ISL9N306AS3ST

    Datenblatt

         		UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 6mOhm @ 75A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 3400 pF @ 15 V - 125W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
    FDG330P

    FDG330P

    SMALL SIGNAL FIELD-EFFECT TRANSI

    onsemi

    		 30,040 -
    RFQ
    		FDG330P

    Datenblatt

         		PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) - 110mOhm @ 2A, 4.5V 1.5V @ 250µA 7 nC @ 4.5 V ±8V 477 pF @ 6 V - 480mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    IRFW644BTM

    IRFW644BTM

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 19,077 -
    RFQ
    		IRFW644BTM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 7A, 10V 4V @ 250µA 60 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    G3404B

    G3404B

    N30V,RD(MAX)<22M@10V,RD(MAX)<35M

    Goford Semiconductor

    		 14,935 -
    RFQ
    		G3404B

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A (Tc) 4.5V, 10V 22mOhm @ 4.2A, 10V 2V @ 250µA 2.5 nC @ 10 V ±20V 568 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    SSM3K56CT,L3F

    SSM3K56CT,L3F

    MOSFET N-CH 20V 800MA CST3

    Toshiba Semiconductor and Storage

    		 14,906 -
    RFQ
    		SSM3K56CT,L3F

    Datenblatt

         		U-MOSVII-H SC-101, SOT-883 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 500mW (Ta) 150°C (TA) - - Surface Mount CST3
    FSS172-TL-E

    FSS172-TL-E

    PCH 4V DRIVE SERIES

    onsemi

    		 13,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    G29

    G29

    P15V,RD(MAX)<[email protected],RD(MAX)<4

    Goford Semiconductor

    		 12,694 -
    RFQ
    		G29

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15 V 4.1A (Tc) 2.5V, 4.5V 30mOhm @ 3A, 4.5V 900mV @ 250µA 7.8 nC @ 10 V ±12V 740 pF @ 10 V - 1.05W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    IRFD9110

    IRFD9110

    0.7A 100V 1.200 OHM P-CHANNEL

    Harris Corporation

    		 11,617 -
    RFQ
    		IRFD9110

    Datenblatt

         		- 4-DIP (0.300", 7.62mm) Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 10V 1.2Ohm @ 420mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-DIP, Hexdip, HVMDIP
    SSP2N60A

    SSP2N60A

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 9,000 -
    RFQ
    		SSP2N60A

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 410 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    G2305

    G2305

    P20V,RD(MAX)<[email protected],RD(MAX)<7

    Goford Semiconductor

    		 8,918 -
    RFQ
    		G2305

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 2.5V, 4.5V 35mOhm @ 4.1A, 4.5V 1V @ 250µA 12 nC @ 4.5 V ±12V 1050 pF @ 10 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    G2304

    G2304

    MOSFET N-CH 30V 3.6A SOT-23

    Goford Semiconductor

    		 8,870 -
    RFQ
    		G2304

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Tc) 4.5V, 10V 39mOhm @ 1.8A, 10V 2.2V @ 250µA 5 nC @ 10 V ±20V 294 pF @ 15 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    G06P01E

    G06P01E

    P12V,RD(MAX)<[email protected],RD(MAX)<4

    Goford Semiconductor

    		 8,792 -
    RFQ
    		G06P01E

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 4A (Tc) 1.8V, 4.5V 28mOhm @ 3A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±10V 1087 pF @ 6 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    3401

    3401

    MOSFET P-CH 30V 4.2A SOT-23

    Goford Semiconductor

    		 8,625 -
    RFQ
    		3401

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Tc) 4.5V, 10V 55mOhm @ 4A, 10V 1.3V @ 250µA 8.5 nC @ 4.5 V ±12V 670 pF @ 15 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
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