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0755-82798135Einzeldioden
Einzelne Dioden
TomatoElec liefert einzelne Dioden für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne Diodenprodukte für Gleichrichtungs-, Schalt-, Signalsteuerungs- und Schutzschaltungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Dioden und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung einzelner Dioden, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STTH6010WDIODE GEN PURP 1KV 60A DO247 |
787 | - |
|
Datenblatt |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 1000 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 20 µA @ 1000 V | - | - | - | Through Hole | DO-247 | 175°C (Max) |
|
STPSC12065G2-TRDIODE SIL CARBIDE 650V 12A D2PAK |
1,155 | - |
|
Datenblatt |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
DSEI30-06ADIODE GEN PURP 600V 37A TO247AD |
821 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 600 V | 37A | 1.6 V @ 37 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
|
JANTX1N5806DIODE GEN PURP 150V 1A AXIAL |
149 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
GD30MPS06ADIODE SIL CARB 650V 30A TO220-2 |
1,744 | - |
|
Datenblatt |
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | 175°C |
|
DNA30EM2200PZ-TRLDIODE GEN PURP 2.2KV 30A TO263AA |
1,151 | - |
|
Datenblatt |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 2200 V | 30A | 1.26 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 2200 V | 7pF @ 700V, 1MHz | - | - | Surface Mount | TO-263AA | -55°C ~ 150°C |
|
STPSC10H12G-TRDIODE SIL CARB 1.2KV 10A D2PAK |
1,955 | - |
|
Datenblatt |
ECOPACK® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 725pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
1N5804DIODE GEN PURP 100V 1A AXIAL |
299 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
C3D10065EDIODE SIL CARB 650V 32A TO252-2 |
7,911 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 460.5pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C6D10065Q-TRDIODE SIL CARBIDE 650V 39A 4QFN |
1,573 | - |
|
Datenblatt |
- | 4-PowerVQFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 39A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | 4-QFN (8x8) | -55°C ~ 175°C |
|
C6D10065EDIODE SIL CARB 650V 35A TO252-2 |
3,633 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
|
APT60S20SGDIODE SCHOTTKY 200V 75A D3 |
187 | - |
|
Datenblatt |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Schottky | 200 V | 75A | 900 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 1 mA @ 200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 150°C |
|
VS-HFA15PB60-N3DIODE GP 600V 15A TO247AC |
194 | - |
|
Datenblatt |
HEXFRED® | TO-247-2 | Tube | Active | Standard | 600 V | 15A | 1.7 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
|
STTH30RQ06L2Y-TRDIODE GEN PURP 600V 30A HU3PAK |
823 | - |
|
Datenblatt |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | Standard | 600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Automotive | AEC-Q101 | Surface Mount | HU3PAK | -40°C ~ 175°C |
|
IDK12G65C5XTMA2DIODE SIL CARB 650V 12A TO263-2 |
1,257 | - |
|
Datenblatt |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | - | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
|
1N5614USDIODE GEN PURP 200V 1A D-5A |
250 | - |
|
Datenblatt |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
|
IDL12G65C5XUMA2DIODE SIL CARB 650V 12A VSON-4 |
6,146 | - |
|
Datenblatt |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
DSEI36-06AS-TUBDIODE GEN PURP 600V 37A TO263AA |
1,403 | - |
|
Datenblatt |
FRED | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 600 V | 37A | 1.6 V @ 37 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-263AA | -40°C ~ 150°C |
|
C4D05120E-TRDIODE SIL CARB 1.2KV 19A TO252-2 |
1,520 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 390pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
1N5550DIODE GEN PURP 200V 3A AXIAL |
262 | - |
|
Datenblatt |
- | B, Axial | Bulk | Active | Standard | 200 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
