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Einzelne Dioden
TomatoElec liefert einzelne Dioden für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne Diodenprodukte für Gleichrichtungs-, Schalt-, Signalsteuerungs- und Schutzschaltungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Dioden und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung einzelner Dioden, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DNA30E2200PADIODE GEN PURP 2.2KV 30A TO220AC |
219 | - |
|
Datenblatt |
- | TO-220-2 | Tube | Active | Standard | 2200 V | 30A | 1.26 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 2200 V | 7pF @ 700V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
1N5620DIODE GEN PURP 800V 1A AXIAL |
300 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
STPSC10H065DIDIODE SIC 650V 10A TO220AC INS |
999 | - |
|
Datenblatt |
- | TO-220-2 Insulated, TO-220AC | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | - | - | - | Through Hole | TO-220AC ins | -40°C ~ 175°C |
|
IDW100E60FKSA1DIODE GP 600V 150A TO247-3-1 |
388 | - |
|
Datenblatt |
- | TO-247-3 | Tube | Active | Standard | 600 V | 150A | 2 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
|
|
C3D06065IDIODE SIL CARB 650V 13A TO220-2 |
970 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 13A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 295pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 Isolated Tab | -55°C ~ 175°C |
|
C3D08060ADIODE SIL CARB 600V 24A TO220-2 |
357 | - |
|
Datenblatt |
Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 24A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 441pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
1N3611DIODE GEN PURP 200V 1A AXIAL |
341 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
VS-30EPH06-N3DIODE GP 600V 30A TO247AC |
5,744 | - |
|
Datenblatt |
FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 31 ns | 50 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -65°C ~ 175°C |
|
STPSC12065DYDIODE SIL CARB 650V 12A TO220AC |
7,548 | - |
|
Datenblatt |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 750pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
|
ISL9R3060G2-F085DIODE GEN PURP 600V 30A TO247-2 |
418 | - |
|
Datenblatt |
Stealth™ | TO-247-2 | Tube | Active | Avalanche | 600 V | 30A | 2.4 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 100 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
UJ3D1210TSDIODE SIL CARB 1.2KV 10A TO220-2 |
8,990 | - |
|
Datenblatt |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
DLA40IM800PC-TRLDIODE GEN PURP 800V 40A TO263AA |
1,266 | - |
|
Datenblatt |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 800 V | 40A | 1.3 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 10pF @ 400V, 1MHz | - | - | Surface Mount | TO-263AA | -55°C ~ 175°C |
|
IDK08G120C5XTMA1DIODE SIC 1.2KV 22.8A TO263-1 |
373 | - |
|
Datenblatt |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22.8A | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
DSI30-16AS-TRLDIODE GEN PURP 1.6KV 30A TO263AA |
2,638 | - |
|
Datenblatt |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1600 V | 30A | 1.29 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 µA @ 1600 V | 10pF @ 400V, 1MHz | - | - | Surface Mount | TO-263AA | -40°C ~ 175°C |
|
|
DSEP29-12ADIODE GEN PURP 1.2KV 30A TO220AC |
774 | - |
|
Datenblatt |
HiPerFRED™ | TO-220-2 | Tube | Active | Standard | 1200 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
JANTX1N3611DIODE GEN PURP 200V 1A AXIAL |
356 | - |
|
Datenblatt |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
DSEI30-10ADIODE GEN PURP 1KV 30A TO247AD |
445 | - |
|
Datenblatt |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 30A | 2.4 V @ 36 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 750 µA @ 1000 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
C3D08065EDIODE SIL CARB 650V 25.5A TO252 |
2,740 | - |
|
Datenblatt |
Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 25.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 395pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
IDK10G65C5XTMA2DIODE SIL CARB 650V 10A TO263-2 |
1,857 | - |
|
Datenblatt |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | 300pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
STPSC10H12GY-TRDIODE SIL CARB 1.2KV 10A D2PAK |
1,893 | - |
|
Datenblatt |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 725pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
