FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPP230N06L3G

IPP230N06L3G

N-CHANNEL POWER MOSFET

Infineon Technologies

9,620 -
RFQ
IPP230N06L3G

Datenblatt

OptiMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 23mOhm @ 30A, 10V 2.2V @ 11µA 10 nC @ 4.5 V ±20V 1600 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
BUK663R5-30C,118

BUK663R5-30C,118

MOSFET N-CH 30V 100A D2PAK

NXP USA Inc.

8,673 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
BSC200P03LSG

BSC200P03LSG

P-CHANNEL POWER MOSFET

Infineon Technologies

8,671 -
RFQ
BSC200P03LSG

Datenblatt

OptiMOS™ 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 9.9A (Ta), 12.5A (Tc) 10V 20mOhm @ 12.5A, 10V 1V @ 100µA 48.5 nC @ 10 V ±25V 2430 pF @ 15 V - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
RFD20N03SM

RFD20N03SM

N-CHANNEL POWER MOSFET

Harris Corporation

8,441 -
RFQ
RFD20N03SM

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
HUF76107P3

HUF76107P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

8,400 -
RFQ
HUF76107P3

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±16V 315 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
ISL9N318AD3ST

ISL9N318AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

7,500 -
RFQ
ISL9N318AD3ST

Datenblatt

UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
2SK2624LS

2SK2624LS

N-CHANNEL SILICON MOSFET

onsemi

7,443 -
RFQ
2SK2624LS

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD5N50

NTD5N50

N-CHANNEL POWER MOSFET

onsemi

7,050 -
RFQ
NTD5N50

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF621R

IRF621R

N-CHANNEL POWER MOSFET

Harris Corporation

6,837 -
RFQ
IRF621R

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
NTP125N02RG

NTP125N02RG

MOSFET N-CH 24V 15.9A TO220AB

onsemi

7,800 -
RFQ
NTP125N02RG

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 15.9A (Ta) 4.5V, 10V 4.6mOhm @ 20A, 10V 2V @ 250µA 28 nC @ 4.5 V ±20V 3440 pF @ 20 V - 1.98W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GSFQ2307

GSFQ2307

MOSFET, P-CH, SINGLE, -9.6A, -20

Good-Ark Semiconductor

6,000 -
RFQ
GSFQ2307

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.6A (Tc) 1.8V, 4.5V 23mOhm @ 5A, 4.5V 1V @ 250µA 29 nC @ 4.5 V ±10V 2430 pF @ 15 V - 2.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
SI4822DY

SI4822DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

5,209 -
RFQ
SI4822DY

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9.5mOhm @ 12.5A, 10V 3V @ 250µA 33 nC @ 5 V ±20V 2180 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTQS6463R2

NTQS6463R2

MOSFET P-CH 20V 6.8A 8TSSOP

onsemi

2,031 -
RFQ
NTQS6463R2

Datenblatt

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 2.5V, 4.5V 20mOhm @ 6.8A, 4.5V 900mV @ 250µA 50 nC @ 5 V ±12V - - 930mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
BUK7535-100A,127

BUK7535-100A,127

MOSFET N-CH 100V 41A TO220AB

NXP USA Inc.

5,000 -
RFQ

-

* - Tube Active - - - - - - - - - - - - - - - - -
BSB053N03LPG

BSB053N03LPG

N-CHANNEL POWER MOSFET

Infineon Technologies

5,000 -
RFQ
BSB053N03LPG

Datenblatt

OptiMOS™ 3-WDSON Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 71A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2.2V @ 250µA 29 nC @ 10 V ±20V 2700 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
3LP01SS-TL-E

3LP01SS-TL-E

MOSFET P-CH 30V 100MA 3SSFP

onsemi

8,755 -
RFQ
3LP01SS-TL-E

Datenblatt

- SC-81 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 1.5V, 4V 10.4Ohm @ 50mA, 4V - 1.43 nC @ 10 V ±10V 7.5 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount 3-SSFP
RFD15N06LESM

RFD15N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

4,077 -
RFQ
RFD15N06LESM

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - - - Surface Mount TO-252 (DPAK)
BUK9514-55A,127

BUK9514-55A,127

PFET, 73A I(D), 55V, 0.015OHM, 1

NXP USA Inc.

3,357 -
RFQ
BUK9514-55A,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 73A (Tc) 4.5V, 10V 13mOhm @ 25A, 10V 2V @ 1mA - ±10V 3307 pF @ 25 V - 149W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
2SJ207-AZ

2SJ207-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

2,657 -
RFQ
2SJ207-AZ

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMS5P02R2

NTMS5P02R2

MOSFET P-CH 20V 3.95A 8-SOIC

onsemi

2,500 -
RFQ
NTMS5P02R2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.05A (Tj) - 33mOhm @ 5.4A, 4.5V 1.25V @ 250µA 35 nC @ 4.5 V - 1900 pF @ 16 V - - - - - Surface Mount 8-SOIC
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