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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FQI5P10TU

    FQI5P10TU

    MOSFET P-CH 100V 4.5A I2PAK

    Fairchild Semiconductor

    		 3,000 -
    RFQ
    		FQI5P10TU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 1.05Ohm @ 2.25A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 250 pF @ 25 V - 3.75W (Ta), 40W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
    NTR4171PT1G

    NTR4171PT1G

    MOSFET P-CH 30V 2.2A SOT23

    UMW

    		 3,000 -
    RFQ
    		NTR4171PT1G

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    AO3403A

    AO3403A

    SOT-23-3 POWER MOSFETS ROHS

    UMW

    		 2,976 -
    RFQ
    		AO3403A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 75mOhm @ 2.6A, 10V 1.4V @ 250µA 7.2 nC @ 10 V ±12V 315 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    AO3416A

    AO3416A

    20V 6.5A [email protected],6.5A 1.4W 1.1

    UMW

    		 2,802 -
    RFQ
    		AO3416A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 4.5V 25mOhm @ 6.5A, 4.5V 1.1V @ 250µA 10 nC @ 4.5 V ±8V 1650 pF @ 10 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount SOT-23
    AO3414A

    AO3414A

    20V 4.2A 400MW [email protected],3.6A 1.

    UMW

    		 2,317 -
    RFQ
    		AO3414A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 26mOhm @ 4.2A, 4.5V 1V @ 250µA 6.2 nC @ 4.5 V ±8V 436 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    2SK1482-T-AZ

    2SK1482-T-AZ

    SMALL SIGNAL FET

    NEC Corporation

    		 2,162 -
    RFQ
    		2SK1482-T-AZ

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4V, 10V 400mOhm @ 500mA, 10V 2.5V @ 1mA - ±20V 230 pF @ 10 V - 750W (Ta) 150°C - - Through Hole TO-92
    FQI17N08LTU

    FQI17N08LTU

    MOSFET N-CH 80V 16.5A I2PAK

    Fairchild Semiconductor

    		 2,000 -
    RFQ
    		FQI17N08LTU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
    FQD5N30TM

    FQD5N30TM

    MOSFET N-CH 300V 4.4A DPAK

    Fairchild Semiconductor

    		 1,623 -
    RFQ
    		FQD5N30TM

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    FQB20N06TM

    FQB20N06TM

    MOSFET N-CH 60V 20A D2PAK

    Fairchild Semiconductor

    		 1,550 -
    RFQ
    		FQB20N06TM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 3.75W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPSA70R600CEAKMA1

    IPSA70R600CEAKMA1

    MOSFET N-CH 700V 10.5A TO251-3

    Infineon Technologies

    		 4,450 -
    RFQ
    		IPSA70R600CEAKMA1

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 700 V 10.5A (Tc) 10V 600mOhm @ 1A, 10V 3.5V @ 210µA 22 nC @ 10 V ±20V 474 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    FQB3N40TM

    FQB3N40TM

    MOSFET N-CH 400V 2.5A D2PAK

    Fairchild Semiconductor

    		 1,490 -
    RFQ
    		FQB3N40TM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.5A (Tc) 10V 3.4Ohm @ 1.25A, 10V 5V @ 250µA 7.5 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FQPF2P25

    FQPF2P25

    MOSFET P-CH 250V 1.8A TO220F

    Fairchild Semiconductor

    		 1,391 -
    RFQ
    		FQPF2P25

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 250 V 1.8A (Tc) 10V 4Ohm @ 900mA, 10V 5V @ 250µA 8.5 nC @ 10 V ±30V 250 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FQP3N50C

    FQP3N50C

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,362 -
    RFQ
    		FQP3N50C

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    FQI10N20CTU

    FQI10N20CTU

    MOSFET N-CH 200V 9.5A I2PAK

    Fairchild Semiconductor

    		 1,055 -
    RFQ
    		FQI10N20CTU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.5A (Tc) 10V 360mOhm @ 4.75A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 72W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    NTMFS4935NT1G

    NTMFS4935NT1G

    MOSFET N-CH 30V 13A/93A 5DFN

    onsemi

    		 2,260 -
    RFQ
    		NTMFS4935NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 93A (Tc) 4.5V, 10V 3.2mOhm @ 30A, 10V 2.2V @ 250µA 49.4 nC @ 10 V ±20V 4850 pF @ 15 V - 930mW (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    5LN01C-TB-E

    5LN01C-TB-E

    MOSFET N-CH 50V 100MA 3CP

    onsemi

    		 3,954 -
    RFQ
    		5LN01C-TB-E

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50 V 100mA (Ta) 1.5V, 4V 7.8Ohm @ 50mA, 4V - 1.57 nC @ 10 V ±10V 6.6 pF @ 10 V - 250mW (Ta) 150°C (TJ) - - Surface Mount SC-59-3/CP3
    HUFA75321D3ST

    HUFA75321D3ST

    N-CHANNEL ULTRAFET 55V, 20A, 36

    Fairchild Semiconductor

    		 78,075 -
    RFQ
    		HUFA75321D3ST

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    SFT1440-E

    SFT1440-E

    MOSFET N-CH 600V 1.5A TP

    onsemi

    		 2,991 -
    RFQ
    		SFT1440-E

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bag Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.5A (Ta) 10V 8.1Ohm @ 800mA, 10V - 6.3 nC @ 10 V ±30V 130 pF @ 30 V - 1W (Ta), 20W (Tc) 150°C (TJ) - - Through Hole IPAK/TP
    SFT1440-TL-E

    SFT1440-TL-E

    MOSFET N-CH 600V 1.5A TP-FA

    onsemi

    		 9,091 -
    RFQ
    		SFT1440-TL-E

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.5A (Ta) 10V 8.1Ohm @ 800mA, 10V - 6.3 nC @ 10 V ±30V 130 pF @ 30 V - 1W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount TP-FA
    SFT1345-H

    SFT1345-H

    MOSFET P-CH 100V 11A TP

    onsemi

    		 2,484 -
    RFQ
    		SFT1345-H

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) 4V, 10V 275mOhm @ 5.5A, 10V - 21 nC @ 10 V ±20V 1020 pF @ 20 V - 1W (Ta), 35W (Tc) 150°C (TJ) - - Through Hole IPAK/TP
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