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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    HUF76407D3

    HUF76407D3

    MOSFET N-CH 60V 12A IPAK

    Fairchild Semiconductor

    		 11,253 -
    RFQ
    		HUF76407D3

    Datenblatt

         		UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    RFD20N03

    RFD20N03

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 10,550 -
    RFQ
    		RFD20N03

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    PHP45NQ11T,127

    PHP45NQ11T,127

    MOSFET N-CH 105V 47A TO220AB

    NXP USA Inc.

    		 10,000 -
    RFQ
    		PHP45NQ11T,127

    Datenblatt

         		* - Tube Active - - - - - - - - - - - - - - - - -
    GSFN3013

    GSFN3013

    MOSFET, P-CH, SINGLE, -40.00A, -

    Good-Ark Semiconductor

    		 9,986 -
    RFQ
    		GSFN3013

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 13mOhm @ 8A, 10V 2.9V @ 250µA 37 nC @ 10 V ±20V 1480 pF @ 15 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
    SSF3912S

    SSF3912S

    MOSFET, N-CH, SINGLE, 6.5A, 30V-

    Good-Ark Semiconductor

    		 8,945 -
    RFQ
    		SSF3912S

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Tc) 4.5V, 10V 24mOhm @ 6A, 10V 2.5V @ 250µA 8 nC @ 4.5 V ±20V 500 pF @ 25 V - 1.56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    IRFU130ATU

    IRFU130ATU

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 8,698 -
    RFQ
    		IRFU130ATU

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 110mOhm @ 6.5A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 790 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    FDD8750

    FDD8750

    MOSFET N-CH 25V 6.5A/2.7A DPAK

    Fairchild Semiconductor

    		 8,245 -
    RFQ
    		FDD8750

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25 V 6.5A (Ta) 4.5V, 10V 40mOhm @ 2.7A, 10V 2.5V @ 250µA 9 nC @ 10 V ±20V 425 pF @ 13 V - 18W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    GSFC02A05

    GSFC02A05

    MOSFET, P-CH, SINGLE, -5.00A, -2

    Good-Ark Semiconductor

    		 7,410 -
    RFQ
    		GSFC02A05

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Tc) 1.8V, 4.5V 22mOhm @ 5A, 4.5V 1V @ 250µA 24 nC @ 4.5 V ±12V 1930 pF @ 10 V - 1.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3L
    FQD5N30TF

    FQD5N30TF

    MOSFET N-CH 300V 4.4A DPAK

    Fairchild Semiconductor

    		 6,905 -
    RFQ
    		FQD5N30TF

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 300 V 4.4A (Tc) 10V 900mOhm @ 2.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    3415A

    3415A

    P20V,RD(MAX)<[email protected],RD(MAX)<6

    Goford Semiconductor

    		 6,251 -
    RFQ
    		3415A

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Tc) 2.5V, 4.5V 45mOhm @ 4A, 4.5V 1.1V @ 250µA 12 nC @ 4.5 V ±10V 950 pF @ 10 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    FQI11P06TU

    FQI11P06TU

    MOSFET P-CH 60V 11.4A I2PAK

    Fairchild Semiconductor

    		 5,955 -
    RFQ
    		FQI11P06TU

    Datenblatt

         		QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
    SSF0910S

    SSF0910S

    MOSFET, N-CH, SINGLE, 2.0A, 100V

    Good-Ark Semiconductor

    		 5,795 -
    RFQ
    		SSF0910S

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 4.5V, 10V 200mOhm @ 2A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1190 pF @ 50 V - 1.56W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount SOT-23
    BUK968R3-40E,118

    BUK968R3-40E,118

    MOSFET N-CH 40V 75A D2PAK

    NXP USA Inc.

    		 5,996 -
    RFQ

    -

    		 TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 6.4mOhm @ 20A, 10V 2.1V @ 1mA 20.9 nC @ 5 V ±10V 2600 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF710

    IRF710

    PFET, 2A I(D), 400V, 3.6OHM, 1-E

    Harris Corporation

    		 4,630 -
    RFQ
    		IRF710

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    BUK7507-30B,127

    BUK7507-30B,127

    PFET, 75A I(D), 30V, 0.007OHM, 1

    NXP USA Inc.

    		 4,611 -
    RFQ
    		BUK7507-30B,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 2427 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRF710

    IRF710

    MOSFET N-CH 400V 2A TO220AB

    onsemi

    		 4,400 -
    RFQ
    		IRF710

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    BUK7516-55A,127

    BUK7516-55A,127

    PFET, 65.7A I(D), 55V, 0.016OHM,

    NXP USA Inc.

    		 4,277 -
    RFQ
    		BUK7516-55A,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 65.7A (Tc) 10V 16mOhm @ 25A, 10V 4V @ 1mA - ±20V 2245 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    RJK03M9DNS-WS#J5

    RJK03M9DNS-WS#J5

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 3,572 -
    RFQ
    		RJK03M9DNS-WS#J5

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQB3P20TM

    FQB3P20TM

    MOSFET P-CH 200V 2.8A D2PAK

    Fairchild Semiconductor

    		 3,077 -
    RFQ
    		FQB3P20TM

    Datenblatt

         		QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    ISL9N310AD3

    ISL9N310AD3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,028 -
    RFQ
    		ISL9N310AD3

    Datenblatt

         		UltraFET® TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 10Ohm @ 35A, 10A 3V @ 250µA 48 nC @ 10 V ±20V 1800 pF @ 15 V - 70W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-251 (IPAK)
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