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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AUIRFL014NTR

    AUIRFL014NTR

    AUTOMOTIVE POWER MOSFET

    International Rectifier

    		 16,040 -
    RFQ
    		AUIRFL014NTR

    Datenblatt

         		HEXFET® TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 1.5A (Ta) 10V 160mOhm @ 1.9A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 190 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    NTNS4C69NTCG

    NTNS4C69NTCG

    MOSFET N-CH SMD

    onsemi

    		 7,149 -
    RFQ
    		NTNS4C69NTCG

    Datenblatt

         		- 3-XFDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1A (Ta) 1.8V, 4.5V 155mOhm @ 300mA, 4.5V 1.1V @ 10µA 0.9 nC @ 4.5 V ±12V 75 pF @ 15 V - 178mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-883 (XDFN3) (1x0.6)
    SI2102-TP

    SI2102-TP

    MOSFET N-CH 20V 2.1A SOT323

    Micro Commercial Co

    		 14,409 -
    RFQ
    		SI2102-TP

    Datenblatt

         		- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Tj) 2.5V, 4.5V 60mOhm @ 3.6A, 4.5V 1.2V @ 50µA 10 nC @ 4.5 V ±8V 300 pF @ 10 V - 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
    BUZ73AHXKSA1

    BUZ73AHXKSA1

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 11,540 -
    RFQ
    		BUZ73AHXKSA1

    Datenblatt

         		SIPMOS® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    DMP58D0LFB-7

    DMP58D0LFB-7

    MOSFET P-CH 50V 180MA 3DFN

    Diodes Incorporated

    		 10,199 -
    RFQ

    -

    		 - 3-UFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 50 V 180mA (Ta) 2.5V, 5V 8Ohm @ 100mA, 5V 2.1V @ 250µA - ±20V 27 pF @ 25 V - 470mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X1-DFN1006-3
    GSFN4012

    GSFN4012

    MOSFET, N-CH, SINGLE, 40.00A, 40

    Good-Ark Semiconductor

    		 10,000 -
    RFQ
    		GSFN4012

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 15.2 nC @ 4.5 V ±20V 1460 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
    3LN01M-TL-E

    3LN01M-TL-E

    MOSFET N-CH 30V 150MA SC70/MCPH3

    onsemi

    		 2,291 -
    RFQ
    		3LN01M-TL-E

    Datenblatt

         		- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150mA (Ta) 1.5V, 4V 3.7Ohm @ 80mA, 4V 1.3V @ 100µA 1.58 nC @ 10 V ±10V 7 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount SC-70 / MCP3
    BSF083N03LQG

    BSF083N03LQG

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 6,000 -
    RFQ
    		BSF083N03LQG

    Datenblatt

         		OptiMOS™ 3-WDSON Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 53A (Tc) 4.5V, 10V 8.3mOhm @ 20A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1800 pF @ 15 V - 2.2W (Ta), 36W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2, CanPAK M™
    SSFD6909

    SSFD6909

    MOSFET, P-CH, SINGLE, -10A, -60V

    Good-Ark Semiconductor

    		 4,546 -
    RFQ
    		SSFD6909

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4.5V, 10V 105mOhm @ 6A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 1300 pF @ 30 V - 32W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    AM7302N

    AM7302N

    MOSFET N-CH 30V 40A DFN3X3

    Analog Power Inc.

    		 4,300 -
    RFQ
    		AM7302N

    Datenblatt

         		- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 24.2A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 1V @ 250µA 32 nC @ 4.5 V ±20V 5022 pF @ 15 V - 3.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3x3)
    FCU3400N80Z

    FCU3400N80Z

    MOSFET N-CH 800V 2A IPAK

    onsemi

    		 4,008 -
    RFQ
    		FCU3400N80Z

    Datenblatt

         		SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    BUZ73ALHXKSA1

    BUZ73ALHXKSA1

    MOSFET N-CH 200V 5.5A TO220-3

    Infineon Technologies

    		 3,169 -
    RFQ
    		BUZ73ALHXKSA1

    Datenblatt

         		SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 5V 600mOhm @ 3.5A, 5V 2V @ 1mA - ±20V 840 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SIL2305B-TP

    SIL2305B-TP

    P-CHANNEL MOSFET,SOT23-6L

    Micro Commercial Co

    		 2,935 -
    RFQ
    		SIL2305B-TP

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5.4A 1.8V, 4.5V 60mOhm @ 2.7A, 4.5V 900mV @ 250µA 15 nC @ 4.5 V ±10V 740 pF @ 4 V - 2W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    IRFU4105ZPBF-IR

    IRFU4105ZPBF-IR

    HEXFET N-CHANNEL POWER MOSFET

    International Rectifier

    		 1,993 -
    RFQ
    		IRFU4105ZPBF-IR

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    G1K1P06LL

    G1K1P06LL

    P-60V,-4A,RD(MAX)<110M@-10V,VTH-

    Goford Semiconductor

    		 1,656 -
    RFQ
    		G1K1P06LL

    Datenblatt

         		TrenchFET® SOT-23-6 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 110mOhm @ 2A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1035 pF @ 30 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    AM7341P

    AM7341P

    MOSFET P-CH -40V 35A DFN3X3

    Analog Power Inc.

    		 1,500 -
    RFQ
    		AM7341P

    Datenblatt

         		- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) 40 V 12A (Ta) 4.5V, 10V 19mOhm @ 12A, 10V 1V @ 250µA 10 nC @ 5 V ±20V - - 3.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3x3)
    BUK9607-30B,118

    BUK9607-30B,118

    MOSFET N-CH 30V 75A D2PAK

    NXP USA Inc.

    		 1,087 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    NTD23N03R-001

    NTD23N03R-001

    MOSFET N-CH 25V 3.8A/17.1A IPAK

    onsemi

    		 9,821 -
    RFQ
    		NTD23N03R-001

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 25 V 3.8A (Ta), 17.1A (Tc) 4V, 5V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 1.14W (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    IPS65R950C6AKMA1

    IPS65R950C6AKMA1

    MOSFET N-CH 650V 4.5A TO251-3

    Infineon Technologies

    		 5,600 -
    RFQ
    		IPS65R950C6AKMA1

    Datenblatt

         		CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
    BSP125L6327HTSA1

    BSP125L6327HTSA1

    MOSFET N-CH 600V 120MA SOT223-4

    Infineon Technologies

    		 4,535 -
    RFQ
    		BSP125L6327HTSA1

    Datenblatt

         		SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 4.5V, 10V 45Ohm @ 120mA, 10V 2.3V @ 94µA 6.6 nC @ 10 V ±20V 150 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
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