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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PJA3409_R1_00001

    PJA3409_R1_00001

    SOT-23, MOSFET

    Panjit International Inc.

    		 33,621 -
    RFQ
    		PJA3409_R1_00001

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4.5V, 10V 110mOhm @ 2.9A, 10V 2.1V @ 250µA 9.8 nC @ 10 V ±20V 396 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    SFU9220TU

    SFU9220TU

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 29,376 -
    RFQ
    		SFU9220TU

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 3.1A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 540 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    NDD04N50Z-1G

    NDD04N50Z-1G

    MOSFET N-CH 500V 3A IPAK

    onsemi

    		 6,514 -
    RFQ
    		NDD04N50Z-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.7Ohm @ 1.5A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 308 pF @ 25 V - 61W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    2SJ205-T1-AZ

    2SJ205-T1-AZ

    P-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 25,000 -
    RFQ
    		2SJ205-T1-AZ

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    5LN01M-TL-H

    5LN01M-TL-H

    MOSFET N-CH 50V 100MA 3MCP

    onsemi

    		 2,271 -
    RFQ
    		5LN01M-TL-H

    Datenblatt

         		- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50 V 100mA (Ta) 1.5V, 4V 7.8Ohm @ 50mA, 4V - 1.57 nC @ 10 V ±10V 6.6 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount MCP
    2SK4098LS-YOC11

    2SK4098LS-YOC11

    MOSFET N-CH

    onsemi

    		 22,045 -
    RFQ
    		2SK4098LS-YOC11

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    SFT1458-H

    SFT1458-H

    MOSFET N-CH 600V 1A IPAK/TP

    onsemi

    		 5,815 -
    RFQ

    -

    		 - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1A (Ta) 10V 13Ohm @ 500mA, 10V - 3.8 nC @ 10 V ±30V 65 pF @ 20 V - 1W (Ta), 38W (Tc) 150°C (TJ) - - Through Hole IPAK/TP
    PJE138L_R1_00001

    PJE138L_R1_00001

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 14,280 -
    RFQ
    		PJE138L_R1_00001

    Datenblatt

         		- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 160mA (Ta) 1.8V, 10V 4.2Ohm @ 160mA, 10V 1.5V @ 250µA 0.7 nC @ 4.5 V ±20V 15 pF @ 15 V - 223mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-523
    UPA653TT-E1-A

    UPA653TT-E1-A

    MOSFET P-CH 30V 2.5A 6WSOF

    Renesas Electronics Corporation

    		 12,000 -
    RFQ
    		UPA653TT-E1-A

    Datenblatt

         		- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) - 165mOhm @ 1.5A, 10V 2.5V @ 1mA 3.4 nC @ 10 V - 175 pF @ 10 V - - - - - Surface Mount 6-WSOF
    ECH8320-TL-H

    ECH8320-TL-H

    MOSFET P-CH 20V 9.5A SOT28FL

    Fairchild Semiconductor

    		 12,000 -
    RFQ
    		ECH8320-TL-H

    Datenblatt

         		- 8-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) - 14.5mOhm @ 5A, 4.5V 1.3V @ 1mA 25 nC @ 4.5 V ±10V 2300 pF @ 10 V - 1.6W (Ta) 150°C - - Surface Mount SOT-28FL/ECH8
    SFS9634

    SFS9634

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 10,835 -
    RFQ
    		SFS9634

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 3.4A (Tc) 10V 1.30Ohm @ 1.7A, 10V 4V @ 250µA 37 nC @ 10 V ±30V 975 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    BSF050N03LQ3G

    BSF050N03LQ3G

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 10,000 -
    RFQ
    		BSF050N03LQ3G

    Datenblatt

         		OptiMOS™ DirectFET™ Isometric MX Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 60A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 3000 pF @ 15 V - 2.2W (Ta), 28W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    HUF76609D3S

    HUF76609D3S

    MOSFET N-CH 100V 10A DPAK

    Fairchild Semiconductor

    		 9,199 -
    RFQ
    		HUF76609D3S

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 160mOhm @ 10A, 10V 3V @ 250µA 16 nC @ 10 V ±16V 425 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDD8451

    FDD8451

    POWER FIELD-EFFECT TRANSISTOR, 9

    Fairchild Semiconductor

    		 7,802 -
    RFQ
    		FDD8451

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 28A (Tc) 4.5V, 10V 24mOhm @ 9A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 990 pF @ 20 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    BUK9507-30B,127

    BUK9507-30B,127

    MOSFET N-CH 30V 75A TO220AB

    NXP USA Inc.

    		 6,970 -
    RFQ

    -

    		 * - Tube Active - - - - - - - - - - - - - - - - -
    GSFC0213

    GSFC0213

    MOSFET, P-CH, SINGLE, -5.8A, -20

    Good-Ark Semiconductor

    		 5,936 -
    RFQ
    		GSFC0213

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5.8A (Tc) 1.5V, 4.5V 33mOhm @ 4A, 4.5V 1V @ 250µA 25 nC @ 4.5 V ±10V 2100 pF @ 15 V - 1.56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    FDS6682

    FDS6682

    MOSFET N-CH 30V 14A 8SOIC

    onsemi

    		 4,263 -
    RFQ
    		FDS6682

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2310 pF @ 15 V - 1W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount 8-SOIC
    2SJ196-T-AZ

    2SJ196-T-AZ

    P-CHANNEL SMALL SIGNAL MOSFET

    Renesas Electronics Corporation

    		 5,502 -
    RFQ
    		2SJ196-T-AZ

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    HUF75307T3ST

    HUF75307T3ST

    MOSFET N-CH 55V 2.6A SOT223-4

    Fairchild Semiconductor

    		 5,176 -
    RFQ
    		HUF75307T3ST

    Datenblatt

         		- TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.6A (Ta) 10V 90mOhm @ 2.6A, 10V 4V @ 250µA 17 nC @ 20 V ±20V 250 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
    FQU1N80TU

    FQU1N80TU

    MOSFET N-CH 800V 1A IPAK

    onsemi

    		 9,872 -
    RFQ
    		FQU1N80TU

    Datenblatt

         		QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 5V @ 250µA 7.2 nC @ 10 V ±30V 195 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
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