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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SPD03N60C3ATMA1

    SPD03N60C3ATMA1

    MOSFET N-CH 600V 3.2A TO252-3

    Infineon Technologies

    		 17,260 -
    RFQ
    		SPD03N60C3ATMA1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    TK5R1P08QM,RQ

    TK5R1P08QM,RQ

    UMOS10 DPAK 80V 5.1MOHM

    Toshiba Semiconductor and Storage

    		 15,659 -
    RFQ
    		TK5R1P08QM,RQ

    Datenblatt

         		U-MOSX-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 84A (Tc) 6V, 10V 5.1mOhm @ 42A, 10V 3.5V @ 700µA 56 nC @ 10 V ±20V 3980 pF @ 40 V - 104W (Tc) 175°C - - Surface Mount DPAK
    CSD22206WT

    CSD22206WT

    MOSFET P-CH 8V 5A 9DSBGA

    Texas Instruments

    		 15,401 -
    RFQ
    		CSD22206WT

    Datenblatt

         		NexFET™ 9-UFBGA, DSBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8 V 5A (Ta) 2.5V, 4.5V 5.7mOhm @ 2A, 4.5V 1.05V @ 250µA 14.6 nC @ 4.5 V -6V 2275 pF @ 4 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-DSBGA
    ISC011N03L5SATMA1

    ISC011N03L5SATMA1

    MOSFET N-CH 30V 37A/100A TDSON

    Infineon Technologies

    		 15,000 -
    RFQ
    		ISC011N03L5SATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 37A (Ta), 100A (Tc) 4.5V, 10V 1.1mOhm @ 30A, 10V 2V @ 250µA 72 nC @ 10 V ±20V 4700 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
    DMP25H18DLFDE-7

    DMP25H18DLFDE-7

    MOSFET P-CH 250V 260MA 6UDFN

    Diodes Incorporated

    		 14,315 -
    RFQ
    		DMP25H18DLFDE-7

    Datenblatt

         		- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 250 V 260mA (Ta) 3.5V, 10V 14Ohm @ 200mA, 10V 2.5V @ 1mA 2.8 nC @ 10 V ±40V 81 pF @ 25 V - 600mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type E)
    ZXM64P02XTA

    ZXM64P02XTA

    MOSFET P-CH 20V 3.5A 8MSOP

    Diodes Incorporated

    		 6,455 -
    RFQ
    		ZXM64P02XTA

    Datenblatt

         		- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.7V, 4.5V 90mOhm @ 2.4A, 4.5V 700mV @ 250µA (Min) 6.9 nC @ 4.5 V ±12V 900 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-MSOP
    SI4686DY-T1-E3

    SI4686DY-T1-E3

    MOSFET N-CH 30V 18.2A 8SO

    Vishay Siliconix

    		 6,381 -
    RFQ
    		SI4686DY-T1-E3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18.2A (Tc) 4.5V, 10V 9.5mOhm @ 13.8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1220 pF @ 15 V - 3W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    TK560P60Y,RQ

    TK560P60Y,RQ

    MOSFET N-CHANNEL 600V 7A DPAK

    Toshiba Semiconductor and Storage

    		 5,542 -
    RFQ
    		TK560P60Y,RQ

    Datenblatt

         		DTMOSV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
    DMTH6004SK3Q-13

    DMTH6004SK3Q-13

    MOSFET N-CH 60V 100A TO252

    Diodes Incorporated

    		 2,850 -
    RFQ
    		DMTH6004SK3Q-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 3.9W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
    DMTH6005LPS-13

    DMTH6005LPS-13

    MOSFET N-CH 60V PWRDI5060

    Diodes Incorporated

    		 2,396 -
    RFQ
    		DMTH6005LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20.6A (Ta), 100A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V 3V @ 250µA 47.1 nC @ 10 V ±20V 2962 pF @ 30 V - 3.2W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8
    VN0550N3-G-P013

    VN0550N3-G-P013

    MOSFET N-CH 500V 50MA TO92-3

    Microchip Technology

    		 2,099 -
    RFQ
    		VN0550N3-G-P013

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 500 V 50mA (Tj) 5V, 10V 60Ohm @ 50mA, 10V 4V @ 1mA - ±20V 55 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    BUK9Y19-100E,115

    BUK9Y19-100E,115

    MOSFET N-CH 100V 56A LFPAK56

    Nexperia USA Inc.

    		 15,329 -
    RFQ
    		BUK9Y19-100E,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 5V 18mOhm @ 15A, 10V 2.1V @ 1mA 39 nC @ 5 V ±10V 5085 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    MCAC100N08YA-TP

    MCAC100N08YA-TP

    MOSFET N-CH 80 100A DFN5060

    Micro Commercial Co

    		 14,569 -
    RFQ
    		MCAC100N08YA-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.5V @ 250µA 90 nC @ 10 V ±20V 6320 pF @ 40 V - 152W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
    BUK7Y18-75B,115

    BUK7Y18-75B,115

    MOSFET N-CH 75V 49A LFPAK56

    Nexperia USA Inc.

    		 10,540 -
    RFQ
    		BUK7Y18-75B,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 49A (Tc) 10V 18mOhm @ 20A, 10V 4V @ 1mA 35 nC @ 10 V ±20V 2173 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    SIR586DP-T1-RE3

    SIR586DP-T1-RE3

    N-CHANNEL 80 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 8,178 -
    RFQ
    		SIR586DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 20.7A (Ta), 78.4A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1905 pF @ 40 V - 5W (Ta), 71.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    CSD16413Q5A

    CSD16413Q5A

    MOSFET N-CH 25V 24A/100A 8VSON

    Texas Instruments

    		 7,424 -
    RFQ
    		CSD16413Q5A

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 100A (Tc) 4.5V, 10V 3.9mOhm @ 24A, 10V 1.9V @ 250µA 11.7 nC @ 4.5 V +16V, -12V 1780 pF @ 12.5 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    SQJ433EP-T1_GE3

    SQJ433EP-T1_GE3

    MOSFET P-CH 30V 75A PPAK SO-8

    Vishay Siliconix

    		 4,948 -
    RFQ
    		SQJ433EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 8.1mOhm @ 16A, 10V 2.5V @ 250µA 108 nC @ 10 V ±20V 4877 pF @ 15 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    STL70N4LLF5

    STL70N4LLF5

    MOSFET N-CH 40V 70A POWERFLAT

    STMicroelectronics

    		 2,552 -
    RFQ
    		STL70N4LLF5

    Datenblatt

         		STripFET™ V 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 6.5mOhm @ 9A, 10V 1V @ 250µA 13 nC @ 4.5 V ±22V 1800 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerFlat™ (5x6)
    STD9NM50N

    STD9NM50N

    MOSFET N-CH 500V 5A DPAK

    STMicroelectronics

    		 1,329 -
    RFQ
    		STD9NM50N

    Datenblatt

         		MDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 790mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±25V 570 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Surface Mount DPAK
    CSD18513Q5AT

    CSD18513Q5AT

    MOSFET N-CH 40V 124A 8VSON

    Texas Instruments

    		 912 -
    RFQ
    		CSD18513Q5AT

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 124A (Tc) 4.5V, 10V 5.3mOhm @ 19A, 10V 2.4V @ 250µA 61 nC @ 10 V ±20V 4280 pF @ 20 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
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