FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
AOB414

AOB414

MOSFET N-CH 100V 6.6A/51A TO263

Alpha & Omega Semiconductor Inc.

292 -
RFQ
AOB414

Datenblatt

SDMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6.6A (Ta), 51A (Tc) 7V, 10V 25mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 2200 pF @ 50 V - 2.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
MCAC60N10YA-TP

MCAC60N10YA-TP

MOSFET N-CH 100 60A DFN5060

Micro Commercial Co

8,074 -
RFQ
MCAC60N10YA-TP

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A 4.5V, 10V 8.6mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 2270 pF @ 50 V - 88W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
STD36P4LLF6

STD36P4LLF6

MOSFET P-CH 40V 36A DPAK

STMicroelectronics

7,291 -
RFQ
STD36P4LLF6

Datenblatt

STripFET™ F6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 36A (Tc) 4.5V, 10V 20.5mOhm @ 18A, 10V 2.5V @ 250µA 22 nC @ 4.5 V ±20V 2850 pF @ 25 V - 60W (Tc) 175°C (TJ) - - Surface Mount DPAK
RSH070N05TB1

RSH070N05TB1

MOSFET N-CH 45V 7A 8SOP

Rohm Semiconductor

4,973 -
RFQ
RSH070N05TB1

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 7A (Ta) 4V, 10V 25mOhm @ 7A, 10V 2.5V @ 1mA 16.8 nC @ 5 V ±20V 1000 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
SI4100DY-T1-GE3

SI4100DY-T1-GE3

MOSFET N-CH 100V 6.8A 8SO

Vishay Siliconix

4,435 -
RFQ
SI4100DY-T1-GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 6V, 10V 63mOhm @ 4.4A, 10V 4.5V @ 250µA 20 nC @ 10 V ±20V 600 pF @ 50 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SIRA04DP-T1-GE3

SIRA04DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

3,887 -
RFQ
SIRA04DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 2.15mOhm @ 15A, 10V 2.2V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
RD3L050SNTL1

RD3L050SNTL1

MOSFET N-CH 60V 5A TO252

Rohm Semiconductor

1,449 -
RFQ
RD3L050SNTL1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 109mOhm @ 5A, 10V 3V @ 1mA 8 nC @ 10 V ±20V 290 pF @ 10 V - 15W (Tc) 150°C (TJ) - - Surface Mount TO-252
IPA80R1K4P7XKSA1

IPA80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3F

Infineon Technologies

995 -
RFQ
IPA80R1K4P7XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPP80R1K4P7XKSA1

IPP80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies

499 -
RFQ
IPP80R1K4P7XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BSC020N03LSGATMA1

BSC020N03LSGATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies

17,249 -
RFQ
BSC020N03LSGATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.2V @ 250µA 93 nC @ 10 V ±20V 7200 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
SQJ488EP-T2_GE3

SQJ488EP-T2_GE3

N-CHANNEL 100-V (D-S) 175C MOSFE

Vishay Siliconix

14,323 -
RFQ
SQJ488EP-T2_GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 21mOhm @ 7.1A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 978 pF @ 50 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
SQ4080EY-T1_BE3

SQ4080EY-T1_BE3

N-CHANNEL 150-V (D-S) 175C MOSFE

Vishay Siliconix

6,623 -
RFQ
SQ4080EY-T1_BE3

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 85mOhm @ 10A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 1590 pF @ 75 V - 7.1W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
SQJA90EP-T1_GE3

SQJA90EP-T1_GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix

5,694 -
RFQ
SQJA90EP-T1_GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 10V 7.6mOhm @ 10A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 3500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
FDMS7670

FDMS7670

MOSFET N-CH 30V 21A/42A 8PQFN

onsemi

5,149 -
RFQ
FDMS7670

Datenblatt

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 42A (Tc) 4.5V, 10V 3.8mOhm @ 21A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4105 pF @ 15 V - 2.5W (Ta), 62W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPD60R600P6ATMA1

IPD60R600P6ATMA1

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

4,896 -
RFQ
IPD60R600P6ATMA1

Datenblatt

CoolMOS™ P6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
STD8N60DM2

STD8N60DM2

MOSFET N-CH 600V 8A DPAK

STMicroelectronics

3,517 -
RFQ
STD8N60DM2

Datenblatt

MDmesh™ DM2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 4A, 10V 5V @ 100µA 13.5 nC @ 10 V ±30V 375 pF @ 100 V - 85W (Tc) 150°C (TJ) - - Surface Mount DPAK
SQJ459EP-T1_BE3

SQJ459EP-T1_BE3

P-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

2,793 -
RFQ
SQJ459EP-T1_BE3

Datenblatt

- PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 52A (Tc) 4.5V, 10V 18mOhm @ 3.5A, 10V 2.5V @ 250µA 108 nC @ 10 V ±20V 4586 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
FDMS8025S

FDMS8025S

MOSFET N-CH 30V 24A/49A 8PQFN

onsemi

2,628 -
RFQ
FDMS8025S

Datenblatt

PowerTrench®, SyncFET™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 49A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V 3V @ 1mA 47 nC @ 10 V ±20V 3000 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
NVTFS5C466NLTAG

NVTFS5C466NLTAG

MOSFET N-CH 40V 51A 8WDFN

onsemi

1,355 -
RFQ
NVTFS5C466NLTAG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 51A (Tc) 4.5V, 10V 7.3mOhm @ 10A, 10V 2.2V @ 250µA 7 nC @ 4.5 V ±20V 880 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
IPAN60R360PFD7SXKSA1

IPAN60R360PFD7SXKSA1

MOSFET N-CH 650V 10A TO220

Infineon Technologies

534 -
RFQ
IPAN60R360PFD7SXKSA1

Datenblatt

CoolMOS™PFD7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 12.7 nC @ 10 V ±20V 534 pF @ 400 V - 23W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
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