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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIHU5N80AE-GE3

    SIHU5N80AE-GE3

    MOSFET N-CH 800V 4.4A TO251AA

    Vishay Siliconix

    		 2,885 -
    RFQ
    		SIHU5N80AE-GE3

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    IPD19DP10NMATMA1

    IPD19DP10NMATMA1

    TRENCH >=100V PG-TO252-3

    Infineon Technologies

    		 2,847 -
    RFQ
    		IPD19DP10NMATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.6A (Ta), 13.7A (Tc) 10V 186mOhm @ 12A, 10V 4V @ 1.04mA 45 nC @ 10 V ±20V 2000 pF @ 50 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    R6002ENHTB1

    R6002ENHTB1

    600V 1.7A SOP8, LOW-NOISE POWER

    Rohm Semiconductor

    		 1,870 -
    RFQ
    		R6002ENHTB1

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Ta) 10V 3.4Ohm @ 500mA, 10V 4V @ 1mA 6.5 nC @ 10 V ±20V 65 pF @ 25 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    ZXMN10A25GTA

    ZXMN10A25GTA

    MOSFET N-CH 100V 2.9A SOT223

    Diodes Incorporated

    		 16,808 -
    RFQ
    		ZXMN10A25GTA

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 2.9A (Ta) 10V 125mOhm @ 2.9A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 859 pF @ 50 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-3
    SIR624DP-T1-GE3

    SIR624DP-T1-GE3

    MOSFET N-CH 200V 18.6A PPAK SO-8

    Vishay Siliconix

    		 5,744 -
    RFQ
    		SIR624DP-T1-GE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 18.6A (Tc) 7.5V, 10V 60mOhm @ 10A, 10V 4V @ 250µA 23 nC @ 7.5 V ±20V 1110 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    BSC026NE2LS5ATMA1

    BSC026NE2LS5ATMA1

    MOSFET N-CH 25V 24A/82A TDSON

    Infineon Technologies

    		 1,559 -
    RFQ
    		BSC026NE2LS5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 82A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 16 nC @ 10 V ±16V 1100 pF @ 12 V - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-7
    NVMFS5C450NAFT1G

    NVMFS5C450NAFT1G

    MOSFET N-CH 40V 24A/102A 5DFN

    onsemi

    		 1,336 -
    RFQ
    		NVMFS5C450NAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 65µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IRF9Z14PBF-BE3

    IRF9Z14PBF-BE3

    MOSFET P-CH 60V 6.7A TO220AB

    Vishay Siliconix

    		 1,317 -
    RFQ
    		IRF9Z14PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IPP50R380CEXKSA1

    IPP50R380CEXKSA1

    MOSFET N-CH 500V 9.9A TO220-3

    Infineon Technologies

    		 180 -
    RFQ
    		IPP50R380CEXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 9.9A (Tc) 13V 380mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8 nC @ 10 V ±20V 584 pF @ 100 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    CSD17522Q5A

    CSD17522Q5A

    MOSFET N-CH 30V 87A 8VSON

    Texas Instruments

    		 12,791 -
    RFQ
    		CSD17522Q5A

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 8.1mOhm @ 14A, 10V 2V @ 250µA 4.3 nC @ 4.5 V ±20V 695 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    SQJA06EP-T1_GE3

    SQJA06EP-T1_GE3

    MOSFET N-CH 60V 57A PPAK SO-8

    Vishay Siliconix

    		 8,888 -
    RFQ
    		SQJA06EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 8.7mOhm @ 10A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 2800 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    FDMC6675BZ

    FDMC6675BZ

    MOSFET P-CH 30V 9.5A/20A 8MLP

    onsemi

    		 5,005 -
    RFQ
    		FDMC6675BZ

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 20A (Tc) 4.5V, 10V 14.4mOhm @ 9.5A, 10V 3V @ 250µA 65 nC @ 10 V ±25V 2865 pF @ 15 V - 2.3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    RQ7G080ATTCR

    RQ7G080ATTCR

    PCH -40V -8A SMALL SIGNAL POWER

    Rohm Semiconductor

    		 3,198 -
    RFQ
    		RQ7G080ATTCR

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8A (Ta) 4.5V, 10V 18.2mOhm @ 8A, 10V 2.5V @ 1mA 37 nC @ 10 V ±20V 2060 pF @ 20 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    PSMN019-100YLX

    PSMN019-100YLX

    MOSFET N-CH 100V 56A LFPAK56

    Nexperia USA Inc.

    		 2,966 -
    RFQ
    		PSMN019-100YLX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 5V, 10V 18mOhm @ 15A, 10V 2.1V @ 1mA 72.4 nC @ 10 V ±20V 5085 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    BUK9M31-60ELX

    BUK9M31-60ELX

    SINGLE N-CHANNEL 60 V, 21 MOHM L

    Nexperia USA Inc.

    		 2,513 -
    RFQ
    		BUK9M31-60ELX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 20.6mOhm @ 10A, 10V 2.1V @ 1mA 37 nC @ 10 V ±10V 1867 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    DMP3008SFGQ-7

    DMP3008SFGQ-7

    MOSFET P-CH 30V 8.6A PWRDI3333-8

    Diodes Incorporated

    		 26,514 -
    RFQ
    		DMP3008SFGQ-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 8.6A (Ta) 4.5V, 10V 17mOhm @ 10A, 10V 2.1V @ 250µA 47 nC @ 10 V ±20V 2230 pF @ 15 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
    STD5N52U

    STD5N52U

    MOSFET N-CH 525V 4.4A DPAK

    STMicroelectronics

    		 7,415 -
    RFQ
    		STD5N52U

    Datenblatt

         		UltraFASTmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 525 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 16.9 nC @ 10 V ±30V 529 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    XPN3R804NC,L1XHQ

    XPN3R804NC,L1XHQ

    MOSFET N-CH 40V 40A 8TSON

    Toshiba Semiconductor and Storage

    		 14,885 -
    RFQ
    		XPN3R804NC,L1XHQ

    Datenblatt

         		U-MOSVIII 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.5V @ 300µA 35 nC @ 10 V ±20V 2230 pF @ 10 V - 840mW (Ta), 100W (Tc) 175°C - - Surface Mount 8-TSON Advance-WF (3.1x3.1)
    RJK03M5DNS-00#J5

    RJK03M5DNS-00#J5

    MOSFET N-CH 30V 25A 8HWSON

    Renesas Electronics Corporation

    		 14,428 -
    RFQ
    		RJK03M5DNS-00#J5

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.3mOhm @ 12.5A, 10V - 10.4 nC @ 4.5 V ±20V 1890 pF @ 10 V - 15W (Tc) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
    IPD90N04S403ATMA1

    IPD90N04S403ATMA1

    MOSFET N-CH 40V 90A TO252-3

    Infineon Technologies

    		 9,811 -
    RFQ
    		IPD90N04S403ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.2mOhm @ 90A, 10V 4V @ 53µA 66.8 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
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