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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTMFS4C03NT1G

    NTMFS4C03NT1G

    MOSFET N-CH 30V 30A/136A 5DFN

    onsemi

    		 3,637 -
    RFQ
    		NTMFS4C03NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 136A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.2V @ 250µA 45.2 nC @ 10 V ±20V 3071 pF @ 15 V - 3.1W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    BUK7M6R0-40HX

    BUK7M6R0-40HX

    MOSFET N-CH 40V 50A LFPAK33

    Nexperia USA Inc.

    		 2,583 -
    RFQ
    		BUK7M6R0-40HX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 6mOhm @ 20A, 10V 3.6V @ 1mA 28 nC @ 10 V +20V, -10V 1875 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    IRF620PBF-BE3

    IRF620PBF-BE3

    MOSFET N-CH 200V 5.2A TO220AB

    Vishay Siliconix

    		 2,494 -
    RFQ
    		IRF620PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) - 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    DMTH6010SK3Q-13

    DMTH6010SK3Q-13

    MOSFET N-CH 60V 16.3A/70A TO252

    Diodes Incorporated

    		 2,291 -
    RFQ
    		DMTH6010SK3Q-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 16.3A (Ta), 70A (Tc) 10V 8mOhm @ 20A, 10V 4V @ 250µA 38.1 nC @ 10 V ±20V 2841 pF @ 30 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
    IRFU110PBF

    IRFU110PBF

    MOSFET N-CH 100V 4.3A TO251AA

    Vishay Siliconix

    		 1,736 -
    RFQ
    		IRFU110PBF

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    STL50N6F7

    STL50N6F7

    MOSFET N-CH 60V 60A POWERFLAT

    STMicroelectronics

    		 1,709 -
    RFQ
    		STL50N6F7

    Datenblatt

         		STripFET™ F7 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 11mOhm @ 7.5A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 1035 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerFlat™ (5x6)
    NTMFS4C022NT1G

    NTMFS4C022NT1G

    MOSFET N-CH 30V 30A/136A 5DFN

    onsemi

    		 1,063 -
    RFQ
    		NTMFS4C022NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 136A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V 2.2V @ 250µA 45.2 nC @ 10 V ±20V 3071 pF @ 15 V - 3.1W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SI4168DY-T1-GE3

    SI4168DY-T1-GE3

    MOSFET N-CH 30V 24A 8SO

    Vishay Siliconix

    		 26,145 -
    RFQ
    		SI4168DY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 1720 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SQ9407EY-T1_BE3

    SQ9407EY-T1_BE3

    MOSFET P-CH 60V 4.6A 8SOIC

    Vishay Siliconix

    		 12,036 -
    RFQ
    		SQ9407EY-T1_BE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 4.6A (Tc) 4.5V, 10V 85mOhm @ 3.5A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 1140 pF @ 30 V - 3.75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    TSM60NC1R5CP ROG

    TSM60NC1R5CP ROG

    600V, 3A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 10,345 -
    RFQ
    		TSM60NC1R5CP ROG

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 1.5Ohm @ 1A, 10V 5.5V @ 1mA 8.1 nC @ 10 V ±20V 242 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    XPN12006NC,L1XHQ

    XPN12006NC,L1XHQ

    MOSFET N-CH 60V 20A 8TSON

    Toshiba Semiconductor and Storage

    		 9,542 -
    RFQ
    		XPN12006NC,L1XHQ

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20A 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 200µA 23 nC @ 10 V ±20V 1100 pF @ 10 V - 65W (Tc) -55°C ~ 175°C Automotive AEC-Q101 Surface Mount 8-TSON Advance-WF (3.1x3.1)
    SQJ418EP-T1_BE3

    SQJ418EP-T1_BE3

    N-CHANNEL 100-V (D-S) 175C MOSFE

    Vishay Siliconix

    		 9,000 -
    RFQ
    		SQJ418EP-T1_BE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 14mOhm @ 10A, 10V 3.5V @ 250µA 35 nC @ 10 V ±20V 1700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    TK65S04N1L,LXHQ

    TK65S04N1L,LXHQ

    MOSFET N-CH 40V 65A DPAK

    Toshiba Semiconductor and Storage

    		 4,642 -
    RFQ
    		TK65S04N1L,LXHQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta) 4.5V, 10V 4.3mOhm @ 32.5A, 10V 2.5V @ 300µA 39 nC @ 10 V ±20V 2550 pF @ 10 V - 107W (Tc) 175°C - - Surface Mount DPAK+
    NVF2955T1G

    NVF2955T1G

    MOSFET P-CH 60V 2.6A SOT223

    onsemi

    		 2,636 -
    RFQ
    		NVF2955T1G

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2.6A (Ta) 10V 170mOhm @ 750mA, 10V 4V @ 1mA 14.3 nC @ 10 V ±20V 492 pF @ 25 V - 1W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223 (TO-261)
    NVMYS6D2N06CLTWG

    NVMYS6D2N06CLTWG

    MOSFET N-CH 60V 17A/71A 4LFPAK

    onsemi

    		 13,324 -
    RFQ
    		NVMYS6D2N06CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 71A (Tc) - 6.1mOhm @ 35A, 10V 2V @ 53µA 20 nC @ 10 V ±20V 1400 pF @ 25 V - 3.6W (Ta), 61W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    XPN7R104NC,L1XHQ

    XPN7R104NC,L1XHQ

    MOSFET N-CH 40V 20A 8TSON

    Toshiba Semiconductor and Storage

    		 11,107 -
    RFQ
    		XPN7R104NC,L1XHQ

    Datenblatt

         		U-MOSIII 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 4.5V, 10V 7.1mOhm @ 10A, 10V 2.5V @ 200µA 21 nC @ 10 V ±20V 1290 pF @ 10 V - 840mW (Ta), 65W (Tc) 175°C - - Surface Mount 8-TSON Advance-WF (3.1x3.1)
    IRFH5301TRPBF

    IRFH5301TRPBF

    MOSFET N-CH 30V 35A/100A PQFN

    Infineon Technologies

    		 9,076 -
    RFQ
    		IRFH5301TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.85mOhm @ 50A, 10V 2.35V @ 100µA 77 nC @ 10 V ±20V 5114 pF @ 15 V - 3.6W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6) Single Die
    TN0620N3-G-P002

    TN0620N3-G-P002

    MOSFET N-CH 200V 250MA TO92-3

    Microchip Technology

    		 6,309 -
    RFQ
    		TN0620N3-G-P002

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 250mA (Tj) 5V, 10V 6Ohm @ 500mA, 10V 1.6V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    SQJA82EP-T1_GE3

    SQJA82EP-T1_GE3

    MOSFET N-CH 80V 60A PPAK SO-8

    Vishay Siliconix

    		 5,446 -
    RFQ
    		SQJA82EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 8.2mOhm @ 10A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 3000 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    IPN80R900P7ATMA1

    IPN80R900P7ATMA1

    MOSFET N-CHANNEL 800V 6A SOT223

    Infineon Technologies

    		 5,077 -
    RFQ
    		IPN80R900P7ATMA1

    Datenblatt

         		CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
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