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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF40B207

    IRF40B207

    MOSFET N-CH 40V 95A TO220AB

    Infineon Technologies

    		 1,841 -
    RFQ
    		IRF40B207

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 6V, 10V 4.5mOhm @ 57A, 10V 3.9V @ 50µA 68 nC @ 10 V ±20V 2110 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IPD50P03P4L11ATMA2

    IPD50P03P4L11ATMA2

    MOSFET P-CH 30V 50A TO252-31

    Infineon Technologies

    		 19,021 -
    RFQ
    		IPD50P03P4L11ATMA2

    Datenblatt

         		OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 10.5mOhm @ 50A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    RQ6L020SPTCR

    RQ6L020SPTCR

    MOSFET P-CH 60V 2A TSMT6

    Rohm Semiconductor

    		 15,100 -
    RFQ
    		RQ6L020SPTCR

    Datenblatt

         		- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4V, 10V 210mOhm @ 2A, 10V 3V @ 1mA 7.2 nC @ 5 V ±20V 750 pF @ 10 V - 1.25W (Ta) 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
    IPA65R1K0CEXKSA1

    IPA65R1K0CEXKSA1

    MOSFET N-CH 650V 7.2A TO220

    Infineon Technologies

    		 1,456 -
    RFQ
    		IPA65R1K0CEXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 68W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPD040N03LGATMA1

    IPD040N03LGATMA1

    MOSFET N-CH 30V 90A TO252-3

    Infineon Technologies

    		 186 -
    RFQ
    		IPD040N03LGATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    FDMA7672

    FDMA7672

    MOSFET N-CH 30V 9A 6MICROFET

    onsemi

    		 7,388 -
    RFQ
    		FDMA7672

    Datenblatt

         		PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 21mOhm @ 9A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 760 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
    RQ7G080BGTCR

    RQ7G080BGTCR

    NCH 40V 8A, TSMT8, POWER MOSFET

    Rohm Semiconductor

    		 5,756 -
    RFQ
    		RQ7G080BGTCR

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Ta) 4.5V, 10V 16.5mOhm @ 8A, 10V 2.5V @ 1mA 10.6 nC @ 10 V ±20V 530 pF @ 20 V - 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    SVD2955T4G

    SVD2955T4G

    MOSFET P-CH 60V 12A DPAK

    onsemi

    		 4,682 -
    RFQ
    		SVD2955T4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 180mOhm @ 6A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 750 pF @ 25 V - 55W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    TPH14006NH,L1Q

    TPH14006NH,L1Q

    MOSFET N CH 60V 14A 8-SOP ADV

    Toshiba Semiconductor and Storage

    		 4,380 -
    RFQ
    		TPH14006NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta) 6.5V, 10V 14mOhm @ 7A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1300 pF @ 30 V - 1.6W (Ta), 32W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    IPD050N03LGATMA1

    IPD050N03LGATMA1

    MOSFET N-CH 30V 50A TO252-3

    Infineon Technologies

    		 3,430 -
    RFQ
    		IPD050N03LGATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount PG-TO252-3-11
    RW4E045AJTCL1

    RW4E045AJTCL1

    NCH 30V 4.5A POWER MOSFET: RW4E0

    Rohm Semiconductor

    		 1,919 -
    RFQ
    		RW4E045AJTCL1

    Datenblatt

         		- 6-PowerUFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 2.5V, 4.5V 40mOhm @ 4.5A, 4.5V 1.5V @ 1mA 4 nC @ 4.5 V ±12V 450 pF @ 15 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount DFN1616-7T
    FDWS86380-F085

    FDWS86380-F085

    MOSFET N-CH 80V 50A POWER56

    onsemi

    		 1,434 -
    RFQ
    		FDWS86380-F085

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 10V 13.4mOhm @ 50A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1440 pF @ 40 V - 75W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount Power56
    IPD50N06S409ATMA2

    IPD50N06S409ATMA2

    MOSFET N-CH 60V 50A TO252-31

    Infineon Technologies

    		 250 -
    RFQ
    		IPD50N06S409ATMA2

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9mOhm @ 50A, 10V 4V @ 34µA 47.1 nC @ 10 V ±20V 3785 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    AON7418

    AON7418

    MOSFET N-CH 30V 46A/50A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 77,308 -
    RFQ
    		AON7418

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 46A (Ta), 50A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2.2V @ 250µA 65 nC @ 10 V ±20V 2994 pF @ 15 V - 6.2W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (3.3x3.3)
    SI7629DN-T1-GE3

    SI7629DN-T1-GE3

    MOSFET P-CH 20V 35A PPAK1212-8

    Vishay Siliconix

    		 15,784 -
    RFQ
    		SI7629DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 10V 4.6mOhm @ 20A, 10V 1.5V @ 250µA 177 nC @ 10 V ±12V 5790 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SI3438DV-T1-GE3

    SI3438DV-T1-GE3

    MOSFET N-CH 40V 7.4A 6TSOP

    Vishay Siliconix

    		 15,425 -
    RFQ
    		SI3438DV-T1-GE3

    Datenblatt

         		TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 7.4A (Tc) 4.5V, 10V 35.5mOhm @ 5A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 640 pF @ 20 V - 2W (Ta), 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    SQJ443EP-T2_GE3

    SQJ443EP-T2_GE3

    P-CHANNEL 40-V (D-S) 175C MOSFET

    Vishay Siliconix

    		 11,528 -
    RFQ
    		SQJ443EP-T2_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 29mOhm @ 18A, 10V 2.5V @ 250µA 57 nC @ 10 V ±20V 2030 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    ISZ56DP15LMATMA1

    ISZ56DP15LMATMA1

    TRENCH >=100V

    Infineon Technologies

    		 9,850 -
    RFQ
    		ISZ56DP15LMATMA1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 150 V 1.35A (Ta), 6.7A (Tc) 4.5V, 10V 560mOhm @ 5A, 10V 2V @ 724µA 40 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8 FL
    STD64N4F6AG

    STD64N4F6AG

    MOSFET N-CH 40V 54A DPAK

    STMicroelectronics

    		 5,836 -
    RFQ
    		STD64N4F6AG

    Datenblatt

         		STripFET™ F6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 54A (Tc) 10V 8.2mOhm @ 27A, 10V 4.5V @ 250µA 44 nC @ 10 V ±20V 2415 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    SI8409DB-T1-E1

    SI8409DB-T1-E1

    MOSFET P-CH 30V 4.6A 4MICROFOOT

    Vishay Siliconix

    		 5,173 -
    RFQ
    		SI8409DB-T1-E1

    Datenblatt

         		TrenchFET® 4-XFBGA, CSPBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 2.5V, 4.5V 46mOhm @ 1A, 4.5V 1.4V @ 250µA 26 nC @ 4.5 V ±12V - - 1.47W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 4-Microfoot
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