FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
SQS420EN-T1_GE3

SQS420EN-T1_GE3

MOSFET N-CH 20V 8A PPAK1212-8

Vishay Siliconix

12,841 -
RFQ
SQS420EN-T1_GE3

Datenblatt

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 28mOhm @ 5A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 490 pF @ 10 V - 18W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 1212-8
SQJ464EP-T1_GE3

SQJ464EP-T1_GE3

MOSFET N-CH 60V 32A PPAK SO-8

Vishay Siliconix

11,585 -
RFQ
SQJ464EP-T1_GE3

Datenblatt

- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 4.5V, 10V 17mOhm @ 7.1A, 10V 2.5V @ 250µA 44 nC @ 10 V ±20V 2086 pF @ 30 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
IRLHM620TRPBF

IRLHM620TRPBF

MOSFET N-CH 20V 26A/40A PQFN

Infineon Technologies

10,726 -
RFQ
IRLHM620TRPBF

Datenblatt

HEXFET® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 26A (Ta), 40A (Tc) 2.5V, 10V 2.5mOhm @ 20A, 4.5V 1.1V @ 50µA 78 nC @ 4.5 V ±12V 3620 pF @ 10 V - 2.7W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (3x3)
SQJ464EP-T1_BE3

SQJ464EP-T1_BE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix

6,000 -
RFQ
SQJ464EP-T1_BE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 4.5V, 10V 17mOhm @ 7.1A, 10V 2.5V @ 250µA 44 nC @ 10 V ±20V 2086 pF @ 30 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
SQJ481EP-T1_BE3

SQJ481EP-T1_BE3

P-CHANNEL 80-V (D-S) 175C MOSFET

Vishay Siliconix

5,816 -
RFQ
SQJ481EP-T1_BE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 16A (Tc) 4.5V, 10V 80mOhm @ 10A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2000 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
SQ4005EY-T1_GE3

SQ4005EY-T1_GE3

MOSFET P-CHANNEL 12V 15A 8SOIC

Vishay Siliconix

5,479 -
RFQ
SQ4005EY-T1_GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 15A (Tc) 2.5V, 4.5V 22mOhm@ 13.5A, 4.5V 1V @ 250µA 38 nC @ 4.5 V ±8V 3600 pF @ 6 V - 6W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
BSC034N03LSGATMA1

BSC034N03LSGATMA1

MOSFET N-CH 30V 22A/100A TDSON

Infineon Technologies

4,994 -
RFQ
BSC034N03LSGATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 100A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 52 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-5
SI3483CDV-T1-E3

SI3483CDV-T1-E3

MOSFET P-CH 30V 8A 6TSOP

Vishay Siliconix

4,598 -
RFQ
SI3483CDV-T1-E3

Datenblatt

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 10V 34mOhm @ 6.1A, 10V 3V @ 250µA 33 nC @ 10 V ±20V 1000 pF @ 15 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TA) - - Surface Mount 6-TSOP
CSD25485F5T

CSD25485F5T

MOSFET P-CH 20V 5.3A 3PICOSTAR

Texas Instruments

3,485 -
RFQ
CSD25485F5T

Datenblatt

FemtoFET™ 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 1.8V, 8V 35mOhm @ 900mA, 8V 1.3V @ 250µA 3.5 nC @ 4.5 V -12V 533 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-PICOSTAR
SI2325DS-T1-BE3

SI2325DS-T1-BE3

P-CHANNEL 150-V (D-S) MOSFET

Vishay Siliconix

1,959 -
RFQ
SI2325DS-T1-BE3

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 150 V 530mA (Ta) 6V, 10V 1.2Ohm @ 500mA, 10V 4.5V @ 250µA 12 nC @ 10 V ±20V 510 pF @ 25 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRFU210PBF

IRFU210PBF

MOSFET N-CH 200V 2.6A TO251AA

Vishay Siliconix

11,306 -
RFQ
IRFU210PBF

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
TPN13008NH,L1Q

TPN13008NH,L1Q

MOSFET N-CH 80V 18A 8TSON

Toshiba Semiconductor and Storage

4,415 -
RFQ
TPN13008NH,L1Q

Datenblatt

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Tc) 10V 13.3mOhm @ 9A, 10V 4V @ 200µA 18 nC @ 10 V ±20V 1600 pF @ 40 V - 700mW (Ta), 42W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
SISS10DN-T1-GE3

SISS10DN-T1-GE3

MOSFET N-CH 40V 60A PPAK 1212-8S

Vishay Siliconix

2,764 -
RFQ
SISS10DN-T1-GE3

Datenblatt

TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 75 nC @ 10 V +20V, -16V 3750 pF @ 20 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
CSD17302Q5A

CSD17302Q5A

MOSFET N-CH 30V 16A/87A 8VSON

Texas Instruments

19,753 -
RFQ
CSD17302Q5A

Datenblatt

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 87A (Tc) 3V, 8V 7.9mOhm @ 14A, 8V 1.7V @ 250µA 7 nC @ 4.5 V +10V, -8V 950 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
BSC030N03MSGATMA1

BSC030N03MSGATMA1

MOSFET N-CH 30V 21A/100A TDSON

Infineon Technologies

10,567 -
RFQ
BSC030N03MSGATMA1

Datenblatt

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 100A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 73 nC @ 10 V ±20V 5700 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
ZVP0545A

ZVP0545A

MOSFET P-CH 450V 45MA TO92-3

Diodes Incorporated

3,115 -
RFQ
ZVP0545A

Datenblatt

- TO-226-3, TO-92-3 (TO-226AA) Bulk Active P-Channel MOSFET (Metal Oxide) 450 V 45mA (Ta) 10V 150Ohm @ 50mA, 10V 4.5V @ 1mA - ±20V 120 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92
STD6N65M2

STD6N65M2

MOSFET N-CH 650V 4A DPAK

STMicroelectronics

1,792 -
RFQ
STD6N65M2

Datenblatt

MDmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.35Ohm @ 2A, 10V 4V @ 250µA 9.8 nC @ 10 V ±25V 226 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
SQS407ENW-T1_GE3

SQS407ENW-T1_GE3

MOSFET P-CH 30V 16A PPAK1212-8W

Vishay Siliconix

27,453 -
RFQ
SQS407ENW-T1_GE3

Datenblatt

TrenchFET® PowerPAK® 1212-8W Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 10.8mOhm @ 12A, 10V 2.5V @ 250µA 77 nC @ 10 V ±20V 4572 pF @ 20 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 1212-8W
TK40S06N1L,LXHQ

TK40S06N1L,LXHQ

MOSFET N-CH 60V 40A DPAK

Toshiba Semiconductor and Storage

6,970 -
RFQ
TK40S06N1L,LXHQ

Datenblatt

U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 4.5V, 10V 18mOhm @ 20A, 10V 2.5V @ 200µA 26 nC @ 10 V ±20V 1650 pF @ 10 V - 88.2W (Tc) 175°C - - Surface Mount DPAK+
SQ4431EY-T1_GE3

SQ4431EY-T1_GE3

MOSFET P-CH 30V 10.8A 8SO

Vishay Siliconix

6,312 -
RFQ
SQ4431EY-T1_GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10.8A (Tc) 10V 30mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1265 pF @ 15 V - 6W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
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