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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SQ4005EY-T1_GE3

    SQ4005EY-T1_GE3

    MOSFET P-CHANNEL 12V 15A 8SOIC

    Vishay Siliconix

    		 5,479 -
    RFQ
    		SQ4005EY-T1_GE3 Datenblatt TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 15A (Tc) 2.5V, 4.5V 22mOhm@ 13.5A, 4.5V 1V @ 250µA 38 nC @ 4.5 V ±8V 3600 pF @ 6 V - 6W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    BSC034N03LSGATMA1

    BSC034N03LSGATMA1

    MOSFET N-CH 30V 22A/100A TDSON

    Infineon Technologies

    		 4,994 -
    RFQ
    		BSC034N03LSGATMA1 Datenblatt OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 100A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 52 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-5
    SI3483CDV-T1-E3

    SI3483CDV-T1-E3

    MOSFET P-CH 30V 8A 6TSOP

    Vishay Siliconix

    		 4,598 -
    RFQ
    		SI3483CDV-T1-E3 Datenblatt TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 10V 34mOhm @ 6.1A, 10V 3V @ 250µA 33 nC @ 10 V ±20V 1000 pF @ 15 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TA) - - Surface Mount 6-TSOP
    CSD25485F5T

    CSD25485F5T

    MOSFET P-CH 20V 5.3A 3PICOSTAR

    Texas Instruments

    		 3,485 -
    RFQ
    		CSD25485F5T Datenblatt FemtoFET™ 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 1.8V, 8V 35mOhm @ 900mA, 8V 1.3V @ 250µA 3.5 nC @ 4.5 V -12V 533 pF @ 10 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-PICOSTAR
    SI2325DS-T1-BE3

    SI2325DS-T1-BE3

    P-CHANNEL 150-V (D-S) MOSFET

    Vishay Siliconix

    		 1,959 -
    RFQ
    		SI2325DS-T1-BE3 Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Last Time Buy P-Channel MOSFET (Metal Oxide) 150 V 530mA (Ta) 6V, 10V 1.2Ohm @ 500mA, 10V 4.5V @ 250µA 12 nC @ 10 V ±20V 510 pF @ 25 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    IRFU210PBF

    IRFU210PBF

    MOSFET N-CH 200V 2.6A TO251AA

    Vishay Siliconix

    		 11,306 -
    RFQ
    		IRFU210PBF Datenblatt - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    TPN13008NH,L1Q

    TPN13008NH,L1Q

    MOSFET N-CH 80V 18A 8TSON

    Toshiba Semiconductor and Storage

    		 4,415 -
    RFQ
    		TPN13008NH,L1Q Datenblatt U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Tc) 10V 13.3mOhm @ 9A, 10V 4V @ 200µA 18 nC @ 10 V ±20V 1600 pF @ 40 V - 700mW (Ta), 42W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
    SISS10DN-T1-GE3

    SISS10DN-T1-GE3

    MOSFET N-CH 40V 60A PPAK 1212-8S

    Vishay Siliconix

    		 2,764 -
    RFQ
    		SISS10DN-T1-GE3 Datenblatt TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 75 nC @ 10 V +20V, -16V 3750 pF @ 20 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    CSD17302Q5A

    CSD17302Q5A

    MOSFET N-CH 30V 16A/87A 8VSON

    Texas Instruments

    		 19,753 -
    RFQ
    		CSD17302Q5A Datenblatt NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 87A (Tc) 3V, 8V 7.9mOhm @ 14A, 8V 1.7V @ 250µA 7 nC @ 4.5 V +10V, -8V 950 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    BSC030N03MSGATMA1

    BSC030N03MSGATMA1

    MOSFET N-CH 30V 21A/100A TDSON

    Infineon Technologies

    		 10,567 -
    RFQ
    		BSC030N03MSGATMA1 Datenblatt OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 100A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 73 nC @ 10 V ±20V 5700 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
    ZVP0545A

    ZVP0545A

    MOSFET P-CH 450V 45MA TO92-3

    Diodes Incorporated

    		 3,115 -
    RFQ
    		ZVP0545A Datenblatt - TO-226-3, TO-92-3 (TO-226AA) Bulk Active P-Channel MOSFET (Metal Oxide) 450 V 45mA (Ta) 10V 150Ohm @ 50mA, 10V 4.5V @ 1mA - ±20V 120 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92
    STD6N65M2

    STD6N65M2

    MOSFET N-CH 650V 4A DPAK

    STMicroelectronics

    		 1,792 -
    RFQ
    		STD6N65M2 Datenblatt MDmesh™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 1.35Ohm @ 2A, 10V 4V @ 250µA 9.8 nC @ 10 V ±25V 226 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SQS407ENW-T1_GE3

    SQS407ENW-T1_GE3

    MOSFET P-CH 30V 16A PPAK1212-8W

    Vishay Siliconix

    		 27,453 -
    RFQ
    		SQS407ENW-T1_GE3 Datenblatt TrenchFET® PowerPAK® 1212-8W Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 10.8mOhm @ 12A, 10V 2.5V @ 250µA 77 nC @ 10 V ±20V 4572 pF @ 20 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 1212-8W
    TK40S06N1L,LXHQ

    TK40S06N1L,LXHQ

    MOSFET N-CH 60V 40A DPAK

    Toshiba Semiconductor and Storage

    		 6,970 -
    RFQ
    		TK40S06N1L,LXHQ Datenblatt U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 4.5V, 10V 18mOhm @ 20A, 10V 2.5V @ 200µA 26 nC @ 10 V ±20V 1650 pF @ 10 V - 88.2W (Tc) 175°C - - Surface Mount DPAK+
    SQ4431EY-T1_GE3

    SQ4431EY-T1_GE3

    MOSFET P-CH 30V 10.8A 8SO

    Vishay Siliconix

    		 6,312 -
    RFQ
    		SQ4431EY-T1_GE3 Datenblatt TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10.8A (Tc) 10V 30mOhm @ 6A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1265 pF @ 15 V - 6W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    IPN80R1K2P7ATMA1

    IPN80R1K2P7ATMA1

    MOSFET N-CH 800V 4.5A SOT223

    Infineon Technologies

    		 5,827 -
    RFQ
    		IPN80R1K2P7ATMA1 Datenblatt CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 6.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
    SQS160ELNW-T1_GE3

    SQS160ELNW-T1_GE3

    AUTOMOTIVE N-CHANNEL 60 V (D-S)

    Vishay Siliconix

    		 5,221 -
    RFQ
    		SQS160ELNW-T1_GE3 Datenblatt TrenchFET® Gen IV PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 141A (Tc) 4.5V, 10V 4.3mOhm @ 10A, 10V 2.5V @ 250µA 71 nC @ 10 V ±20V 3866 pF @ 25 V - 113W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
    SQS850EN-T1_GE3

    SQS850EN-T1_GE3

    MOSFET N-CH 60V 12A PPAK1212-8

    Vishay Siliconix

    		 4,806 -
    RFQ
    		SQS850EN-T1_GE3 Datenblatt - PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 21.5mOhm @ 6.1A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2021 pF @ 30 V - 33W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 1212-8
    TPH4R003NL,L1Q

    TPH4R003NL,L1Q

    MOSFET N-CH 30V 40A 8SOP

    Toshiba Semiconductor and Storage

    		 4,086 -
    RFQ
    		TPH4R003NL,L1Q Datenblatt U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.3V @ 200µA 14.8 nC @ 10 V ±20V 1400 pF @ 15 V - 1.6W (Ta), 36W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    STD11N50M2

    STD11N50M2

    MOSFET N-CH 500V 8A DPAK

    STMicroelectronics

    		 3,036 -
    RFQ
    		STD11N50M2 Datenblatt MDmesh™ II Plus TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±25V 395 pF @ 100 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
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