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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPN80R1K4P7ATMA1

    IPN80R1K4P7ATMA1

    MOSFET N-CH 800V 4A SOT223

    Infineon Technologies

    		 243 -
    RFQ
    		IPN80R1K4P7ATMA1 Datenblatt CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
    CSD25484F4T

    CSD25484F4T

    MOSFET P-CH 20V 2.5A 3PICOSTAR

    Texas Instruments

    		 14,690 -
    RFQ
    		CSD25484F4T Datenblatt FemtoFET™ 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 1.8V, 8V 94mOhm @ 500mA, 8V 1.2V @ 250µA 1.42 nC @ 4.5 V -12V 230 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-PICOSTAR
    BUK9M9R5-40HX

    BUK9M9R5-40HX

    MOSFET N-CH 40V 40A LFPAK33

    Nexperia USA Inc.

    		 8,999 -
    RFQ
    		BUK9M9R5-40HX Datenblatt - SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.15V @ 1mA 24 nC @ 10 V +16V, -10V 1537 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    SQS482EN-T1_GE3

    SQS482EN-T1_GE3

    MOSFET N-CH 30V 16A PPAK1212-8

    Vishay Siliconix

    		 3,822 -
    RFQ
    		SQS482EN-T1_GE3 Datenblatt TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 8.5mOhm @ 16.4A, 10V 2.5V @ 250µA 39 nC @ 10 V ±20V 1865 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 1212-8
    AOT8N50

    AOT8N50

    MOSFET N-CH 500V 8A TO220

    Alpha & Omega Semiconductor Inc.

    		 3,697 -
    RFQ
    		AOT8N50 Datenblatt - TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 4.5V @ 250µA 28 nC @ 10 V ±30V 1042 pF @ 25 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    RQ6E085BNTCR

    RQ6E085BNTCR

    MOSFET N-CH 30V 8.5A SOT457

    Rohm Semiconductor

    		 3,348 -
    RFQ
    		RQ6E085BNTCR Datenblatt - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Tc) 10V 14.4mOhm @ 8.5A, 10V 2.5V @ 1mA 32.7 nC @ 10 V ±20V 1350 pF @ 15 V - 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
    NVLJWS011N06CLTAG

    NVLJWS011N06CLTAG

    T6 60V LL 2X2 WDFNW6

    onsemi

    		 2,874 -
    RFQ
    		NVLJWS011N06CLTAG Datenblatt - 6-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 48A (Tc) 4.5V, 10V 9mOhm @ 10A, 10V 2V @ 34µA 13.6 nC @ 10 V ±20V 912 pF @ 25 V - 2.9W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 6-WDFNW (2.05x2.05)
    BUK7M9R5-40HX

    BUK7M9R5-40HX

    MOSFET N-CH 40V 40A LFPAK33

    Nexperia USA Inc.

    		 2,679 -
    RFQ
    		BUK7M9R5-40HX Datenblatt - SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 10V 9.5mOhm @ 15A, 10V 3.6V @ 1mA 18 nC @ 10 V ±20V 1166 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    BUK9Y38-100E,115

    BUK9Y38-100E,115

    MOSFET N-CH 100V 30A LFPAK56

    Nexperia USA Inc.

    		 2,164 -
    RFQ
    		BUK9Y38-100E,115 Datenblatt TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 5V, 10V 38mOhm @ 5A, 5V 2.1V @ 1mA 21.6 nC @ 5 V ±10V 2541 pF @ 25 V - 94.9W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    SIRA64DP-T1-RE3

    SIRA64DP-T1-RE3

    MOSFET N-CH 30V 60A PPAK SO-8

    Vishay Siliconix

    		 8,826 -
    RFQ
    		SIRA64DP-T1-RE3 Datenblatt TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.1mOhm @ 10A, 10V 2.2V @ 250µA 65 nC @ 10 V +20V, -16V 3420 pF @ 15 V - 27.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IAUC100N04S6N028ATMA1

    IAUC100N04S6N028ATMA1

    IAUC100N04S6N028ATMA1

    Infineon Technologies

    		 8,793 -
    RFQ
    		IAUC100N04S6N028ATMA1 Datenblatt OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 7V, 10V 2.86mOhm @ 50A, 10V 3V @ 24µA 29 nC @ 10 V ±20V 1781 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8
    DMT8012LFG-7

    DMT8012LFG-7

    MOSFET N-CH 80V PWRDI3333

    Diodes Incorporated

    		 4,549 -
    RFQ
    		DMT8012LFG-7 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 9.5A (Ta), 35A (Tc) 6V, 10V 16mOhm @ 12A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1949 pF @ 40 V - 2.2W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
    BUK9M12-60EX

    BUK9M12-60EX

    MOSFET N-CH 60V 54A LFPAK33

    Nexperia USA Inc.

    		 3,798 -
    RFQ
    		BUK9M12-60EX Datenblatt TrenchMOS™ SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 54A (Tc) 5V 11mOhm @ 15A, 10V 2.1V @ 1mA - ±10V 2769 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    SQ3418AEEV-T1_BE3

    SQ3418AEEV-T1_BE3

    MOSFET N-CH 40V 8A 6TSOP

    Vishay Siliconix

    		 948 -
    RFQ
    		SQ3418AEEV-T1_BE3 Datenblatt TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Tc) 4.5V, 10V 32mOhm @ 5A, 10V 2.5V @ 250µA 12.4 nC @ 10 V ±20V 675 pF @ 20 V - 5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    SIS4604LDN-T1-GE3

    SIS4604LDN-T1-GE3

    N-CHANNEL 60 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 13,827 -
    RFQ
    		SIS4604LDN-T1-GE3 Datenblatt TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15.1A (Ta), 45.9A (Tc) 4.5V, 10V 8.9mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1180 pF @ 30 V - 3.6W (Ta), 33.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    PSMN028-100YS,115

    PSMN028-100YS,115

    MOSFET N-CH 100V 42A LFPAK56

    Nexperia USA Inc.

    		 11,165 -
    RFQ
    		PSMN028-100YS,115 Datenblatt - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 27.5mOhm @ 15A, 10V 4V @ 1mA 33 nC @ 10 V ±20V 1634 pF @ 50 V - 89W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRFR220TRLPBF

    IRFR220TRLPBF

    MOSFET N-CH 200V 4.8A DPAK

    Vishay Siliconix

    		 5,415 -
    RFQ
    		IRFR220TRLPBF Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    TK11S10N1L,LXHQ

    TK11S10N1L,LXHQ

    MOSFET N-CH 100V 11A DPAK

    Toshiba Semiconductor and Storage

    		 3,837 -
    RFQ
    		TK11S10N1L,LXHQ Datenblatt U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) 4.5V, 10V 28mOhm @ 5.5A, 10V 2.5V @ 100µA 15 nC @ 10 V ±20V 850 pF @ 10 V - 65W (Tc) 175°C - - Surface Mount DPAK+
    TPH3R704PC,LQ

    TPH3R704PC,LQ

    MOSFET N-CH 40V 82A 8SOP

    Toshiba Semiconductor and Storage

    		 1,635 -
    RFQ
    		TPH3R704PC,LQ Datenblatt U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.7mOhm @ 41A, 10V 2.4V @ 300µA 47 nC @ 10 V ±20V 3615 pF @ 20 V - 830mW (Ta), 90W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
    AOT414

    AOT414

    MOSFET N-CH 100V 5.6A/43A TO220

    Alpha & Omega Semiconductor Inc.

    		 803 -
    RFQ
    		AOT414 Datenblatt SDMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Ta), 43A (Tc) 7V, 10V 25mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 2200 pF @ 50 V - 1.9W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
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