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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SQJ416EP-T1_BE3

    SQJ416EP-T1_BE3

    N-CHANNEL 100-V (D-S) 175C MOSFE

    Vishay Siliconix

    		 12,000 -
    RFQ
    		SQJ416EP-T1_BE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 30mOhm @ 10A, 10V 3.5V @ 250µA 20 nC @ 10 V ±20V 800 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    TPN7R506NH,L1Q

    TPN7R506NH,L1Q

    MOSFET N-CH 60V 26A 8TSON

    Toshiba Semiconductor and Storage

    		 11,620 -
    RFQ
    		TPN7R506NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Tc) 6.5V, 10V 7.5mOhm @ 13A, 10V 4V @ 200µA 22 nC @ 10 V ±20V 1800 pF @ 30 V - 700mW (Ta), 42W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
    BUK9Y14-40B,115

    BUK9Y14-40B,115

    MOSFET N-CH 40V 56A LFPAK56

    Nexperia USA Inc.

    		 7,280 -
    RFQ
    		BUK9Y14-40B,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) 5V 11mOhm @ 20A, 10V 2V @ 1mA 21 nC @ 5 V ±15V 1800 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    IPD90N04S404ATMA1

    IPD90N04S404ATMA1

    MOSFET N-CH 40V 90A TO252-3

    Infineon Technologies

    		 4,937 -
    RFQ
    		IPD90N04S404ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 4.1mOhm @ 90A, 10V 4V @ 35µA 43 nC @ 10 V ±20V 3440 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
    ISC036N04NM5ATMA1

    ISC036N04NM5ATMA1

    40V 3.6M OPTIMOS MOSFET SUPERSO8

    Infineon Technologies

    		 3,418 -
    RFQ
    		ISC036N04NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 98A (Tc) 7V, 10V 3.6mOhm @ 49A, 10V 3.4V @ 23µA 28 nC @ 10 V ±20V 2000 pF @ 20 V - 3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
    DMT6010LPS-13

    DMT6010LPS-13

    MOSFET N-CH 60V 13.5A PWRDI5060

    Diodes Incorporated

    		 3,135 -
    RFQ
    		DMT6010LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 13.5A (Ta), 80A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 3V @ 250µA 41.3 nC @ 10 V ±20V 2090 pF @ 30 V - 2.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
    FDMC7696

    FDMC7696

    MOSFET N-CH 30V 12A/20A 8MLP

    onsemi

    		 2,062 -
    RFQ
    		FDMC7696

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 20A (Tc) 4.5V, 10V 11.5mOhm @ 12A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1430 pF @ 15 V - 2.4W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    BUK7Y7R6-40EX

    BUK7Y7R6-40EX

    MOSFET N-CH 40V 79A LFPAK56

    Nexperia USA Inc.

    		 1,406 -
    RFQ
    		BUK7Y7R6-40EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 79A (Tc) 10V 7.6mOhm @ 20A, 10V 4V @ 1mA 26.2 nC @ 10 V ±20V 1650 pF @ 25 V - 94.3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    CSD13302WT

    CSD13302WT

    MOSFET N-CH 12V 1.6A 4DSBGA

    Texas Instruments

    		 1,237 -
    RFQ
    		CSD13302WT

    Datenblatt

         		NexFET™ 4-UFBGA, DSBGA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12 V 1.6A (Ta) 2.5V, 4.5V 17.1mOhm @ 1A, 4.5V 1.3V @ 250µA 7.8 nC @ 4.5 V ±10V 862 pF @ 6 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 4-DSBGA (1x1)
    RQ7E110AJTCR

    RQ7E110AJTCR

    MOSFET N-CH 30V 11A TSMT8

    Rohm Semiconductor

    		 584 -
    RFQ
    		RQ7E110AJTCR

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Tc) 4.5V 9mOhm @ 4.5A, 11V 1.5V @ 10mA 22 nC @ 4.5 V ±12V 2410 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TSMT8
    IPA60R600P7SXKSA1

    IPA60R600P7SXKSA1

    MOSFET N-CH 600V 6A TO220

    Infineon Technologies

    		 449 -
    RFQ
    		IPA60R600P7SXKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPU95R3K7P7AKMA1

    IPU95R3K7P7AKMA1

    MOSFET N-CH 950V 2A TO251-3

    Infineon Technologies

    		 304 -
    RFQ
    		IPU95R3K7P7AKMA1

    Datenblatt

         		CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 950 V 2A (Tc) 10V 3.7Ohm @ 800mA, 10V 3.5V @ 40µA 6 nC @ 10 V ±20V 196 pF @ 400 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    VN0606L-G

    VN0606L-G

    MOSFET N-CH 60V 330MA TO92-3

    Microchip Technology

    		 302 -
    RFQ
    		VN0606L-G

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 60 V 330mA (Tj) 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±30V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    SQJ457EP-T2_GE3

    SQJ457EP-T2_GE3

    P-CHANNEL 60-V (D-S) 175C MOSFET

    Vishay Siliconix

    		 12,701 -
    RFQ
    		SQJ457EP-T2_GE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 25mOhm @ 10A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 3400 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIR122DP-T1-RE3

    SIR122DP-T1-RE3

    MOSFET N-CH 80V 16.7A/59.6A PPAK

    Vishay Siliconix

    		 12,205 -
    RFQ
    		SIR122DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16.7A (Ta), 59.6A (Tc) 7.5V, 10V 7.4mOhm @ 10A, 10V 3.8V @ 250µA 44 nC @ 10 V ±20V 1950 pF @ 40 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI4850BDY-T1-GE3

    SI4850BDY-T1-GE3

    MOSFET N-CH 60V 8.4A/11.3A 8SO

    Vishay Siliconix

    		 7,297 -
    RFQ
    		SI4850BDY-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8.4A (Ta), 11.3A (Tc) 4.5V, 10V 19.5mOhm @ 10A, 10V 2.8V @ 250µA 17 nC @ 10 V ±20V 790 pF @ 30 V - 2.5W (Ta), 4.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    BUK7M6R3-40EX

    BUK7M6R3-40EX

    MOSFET N-CH 40V 70A LFPAK33

    Nexperia USA Inc.

    		 2,958 -
    RFQ
    		BUK7M6R3-40EX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 6.3mOhm @ 20A, 10V 4V @ 1mA 28.1 nC @ 10 V ±20V 1912 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    IRFR110PBF

    IRFR110PBF

    MOSFET N-CH 100V 4.3A DPAK

    Vishay Siliconix

    		 3,222 -
    RFQ
    		IRFR110PBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 10V 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    AOT5N50

    AOT5N50

    MOSFET N-CH 500V 5A TO220

    Alpha & Omega Semiconductor Inc.

    		 476 -
    RFQ
    		AOT5N50

    Datenblatt

         		- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4.5V @ 250µA 19 nC @ 10 V ±30V 620 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    SIA421DJ-T1-GE3

    SIA421DJ-T1-GE3

    MOSFET P-CH 30V 12A PPAK SC70-6

    Vishay Siliconix

    		 55,270 -
    RFQ
    		SIA421DJ-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 35mOhm @ 5.3A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 950 pF @ 15 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
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