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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PSMN028-100YS,115

    PSMN028-100YS,115

    MOSFET N-CH 100V 42A LFPAK56

    Nexperia USA Inc.

    		 11,165 -
    RFQ
    		PSMN028-100YS,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 27.5mOhm @ 15A, 10V 4V @ 1mA 33 nC @ 10 V ±20V 1634 pF @ 50 V - 89W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRFR220TRLPBF

    IRFR220TRLPBF

    MOSFET N-CH 200V 4.8A DPAK

    Vishay Siliconix

    		 5,415 -
    RFQ
    		IRFR220TRLPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    TK11S10N1L,LXHQ

    TK11S10N1L,LXHQ

    MOSFET N-CH 100V 11A DPAK

    Toshiba Semiconductor and Storage

    		 3,837 -
    RFQ
    		TK11S10N1L,LXHQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) 4.5V, 10V 28mOhm @ 5.5A, 10V 2.5V @ 100µA 15 nC @ 10 V ±20V 850 pF @ 10 V - 65W (Tc) 175°C - - Surface Mount DPAK+
    TPH3R704PC,LQ

    TPH3R704PC,LQ

    MOSFET N-CH 40V 82A 8SOP

    Toshiba Semiconductor and Storage

    		 1,635 -
    RFQ
    		TPH3R704PC,LQ

    Datenblatt

         		U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.7mOhm @ 41A, 10V 2.4V @ 300µA 47 nC @ 10 V ±20V 3615 pF @ 20 V - 830mW (Ta), 90W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
    AOT414

    AOT414

    MOSFET N-CH 100V 5.6A/43A TO220

    Alpha & Omega Semiconductor Inc.

    		 803 -
    RFQ
    		AOT414

    Datenblatt

         		SDMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Ta), 43A (Tc) 7V, 10V 25mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 2200 pF @ 50 V - 1.9W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    VN2450N3-G

    VN2450N3-G

    MOSFET N-CH 500V 200MA TO92-3

    Microchip Technology

    		 466 -
    RFQ
    		VN2450N3-G

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tj) 4.5V, 10V 13Ohm @ 400mA, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    MCAC38N10YHE3-TP

    MCAC38N10YHE3-TP

    MOSFET N-CH 100 38A DFN5060

    Micro Commercial Co

    		 14,214 -
    RFQ
    		MCAC38N10YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 38A 4.5V, 10V 19mOhm @ 20A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 1150 pF @ 50 V - 70W (Tj) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    TSM120N06LCS RLG

    TSM120N06LCS RLG

    MOSFET N-CHANNEL 60V 23A 8SOP

    Taiwan Semiconductor Corporation

    		 10,205 -
    RFQ
    		TSM120N06LCS RLG

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 37 nC @ 10 V ±20V 2193 pF @ 30 V - 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    SQD15N06-42L_T4GE3

    SQD15N06-42L_T4GE3

    N-CHANNEL 60-V (D-S) 175C MOSFET

    Vishay Siliconix

    		 7,458 -
    RFQ
    		SQD15N06-42L_T4GE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 4.5V, 10V 42mOhm @ 10A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 535 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    CSD17551Q5A

    CSD17551Q5A

    MOSFET N-CH 30V 48A 8VSON

    Texas Instruments

    		 6,454 -
    RFQ
    		CSD17551Q5A

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) 4.5V, 10V 8.8mOhm @ 11A, 10V 2.2V @ 250µA 7.2 nC @ 4.5 V ±20V 1272 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    SI6423ADQ-T1-GE3

    SI6423ADQ-T1-GE3

    MOSFET PCH 20V 10.3/12.5A 8TSSOP

    Vishay Siliconix

    		 5,865 -
    RFQ
    		SI6423ADQ-T1-GE3

    Datenblatt

         		TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 10.3A (Ta), 12.5A (Tc) - 9.8mOhm @ 10A, 4.5V 1V @ 250µA 168 nC @ 8 V ±8V 5875 pF @ 10 V - 1.5W (Ta), 2.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    SISH402DN-T1-GE3

    SISH402DN-T1-GE3

    MOSFET N-CH 30V 19A/35A PPAK

    Vishay Siliconix

    		 5,695 -
    RFQ
    		SISH402DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 35A (Tc) 4.5V, 10V 6mOhm @ 19A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
    BUK7Y38-100EX

    BUK7Y38-100EX

    MOSFET N-CH 100V 30A LFPAK56

    Nexperia USA Inc.

    		 3,562 -
    RFQ
    		BUK7Y38-100EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 10V 29mOhm @ 5A, 10V 4V @ 1mA 30.9 nC @ 10 V ±20V 1720 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    BUK9Y25-80E,115

    BUK9Y25-80E,115

    MOSFET N-CH 80V 37A LFPAK56

    Nexperia USA Inc.

    		 2,910 -
    RFQ
    		BUK9Y25-80E,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Tc) 5V, 10V 27mOhm @ 10A, 5V 2.1V @ 1mA 17.1 nC @ 5 V ±10V 2703 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    ZVN4210GTA

    ZVN4210GTA

    MOSFET N-CH 100V 800MA SOT223

    Diodes Incorporated

    		 2,590 -
    RFQ
    		ZVN4210GTA

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 800mA (Ta) 5V, 10V 1.5Ohm @ 1.5A, 10V 2.4V @ 1mA - ±20V 100 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-3
    STS6P3LLH6

    STS6P3LLH6

    MOSFET P-CH 30V 6A 8SO

    STMicroelectronics

    		 1,977 -
    RFQ
    		STS6P3LLH6

    Datenblatt

         		DeepGATE™, STripFET™ VI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 30mOhm @ 3A, 10V 1V @ 250µA (Min) 12 nC @ 4.5 V ±20V 1450 pF @ 24 V - 2.7W (Ta) 150°C (TJ) - - Surface Mount 8-SOIC
    PSMN2R2-25YLC,115

    PSMN2R2-25YLC,115

    MOSFET N-CH 25V 100A LFPAK56

    Nexperia USA Inc.

    		 7,650 -
    RFQ
    		PSMN2R2-25YLC,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 1.95V @ 1mA 39 nC @ 10 V ±20V 2542 pF @ 12 V - 106W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    STD80N3LL

    STD80N3LL

    MOSFET N-CH 30V 80A DPAK

    STMicroelectronics

    		 7,204 -
    RFQ
    		STD80N3LL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.2mOhm @ 40A, 10V 2.5V @ 250µA 18 nC @ 4.5 V ±20V 1640 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    SIS126DN-T1-GE3

    SIS126DN-T1-GE3

    MOSFET N-CH 80V 12A/45.1A PPAK

    Vishay Siliconix

    		 5,669 -
    RFQ
    		SIS126DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 45.1A (Tc) 7.5V, 10V 10.2mOhm @ 10A, 10V 3.5V @ 250µA 32 nC @ 10 V ±20V 1402 pF @ 40 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    IPD65R650CEAUMA1

    IPD65R650CEAUMA1

    MOSFET N-CH 650V 7A TO252-3

    Infineon Technologies

    		 553 -
    RFQ
    		IPD65R650CEAUMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
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