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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPD60R400CEAUMA1

    IPD60R400CEAUMA1

    MOSFET N-CH 600V 14.7A TO252

    Infineon Technologies

    		 4,723 -
    RFQ
    		IPD60R400CEAUMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 14.7A (Tc) 10V 400mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 112W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-2
    TK33S10N1L,LXHQ

    TK33S10N1L,LXHQ

    MOSFET N-CH 100V 33A DPAK

    Toshiba Semiconductor and Storage

    		 3,536 -
    RFQ
    		TK33S10N1L,LXHQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta) 4.5V, 10V 9.7mOhm @ 16.5A, 10V 2.5V @ 500µA 33 nC @ 10 V ±20V 2250 pF @ 10 V - 125W (Tc) 175°C - - Surface Mount DPAK+
    DMTH6004SK3-13

    DMTH6004SK3-13

    MOSFET N-CH 60V 100A TO252

    Diodes Incorporated

    		 1,335 -
    RFQ
    		DMTH6004SK3-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.8mOhm @ 90A, 10V 4V @ 250µA 95.4 nC @ 10 V ±20V 4556 pF @ 30 V - 3.9W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
    NTMFS5C423NLT1G

    NTMFS5C423NLT1G

    MOSFET N-CH 40V 5DFN

    onsemi

    		 1,193 -
    RFQ
    		NTMFS5C423NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 20 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTMFS5C442NT1G

    NTMFS5C442NT1G

    MOSFET N-CH 40V 29A/140A 5DFN

    onsemi

    		 961 -
    RFQ
    		NTMFS5C442NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 140A (Tc) 10V 2.3mOhm @ 50A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 2100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IPP041N04NGXKSA1

    IPP041N04NGXKSA1

    MOSFET N-CH 40V 80A TO220-3

    Infineon Technologies

    		 399 -
    RFQ
    		IPP041N04NGXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 45µA 56 nC @ 10 V ±20V 4500 pF @ 20 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    PSMN3R0-30YL,115

    PSMN3R0-30YL,115

    MOSFET N-CH 30V 100A LFPAK56

    Nexperia USA Inc.

    		 41,790 -
    RFQ
    		PSMN3R0-30YL,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3mOhm @ 15A, 10V 2.15V @ 1mA 45.8 nC @ 10 V ±20V 2822 pF @ 12 V - 81W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    DMTH6009LK3Q-13

    DMTH6009LK3Q-13

    MOSFET N-CH 60V 14.2A/59A TO252

    Diodes Incorporated

    		 6,490 -
    RFQ
    		DMTH6009LK3Q-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 14.2A (Ta), 59A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 2V @ 250µA 33.5 nC @ 10 V ±20V 1925 pF @ 30 V - 3.2W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252-3
    CSD19538Q3AT

    CSD19538Q3AT

    MOSFET N-CH 100V 15A 8VSON

    Texas Instruments

    		 4,251 -
    RFQ
    		CSD19538Q3AT

    Datenblatt

         		NexFET™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta) 6V, 10V 59mOhm @ 5A, 10V 3.8V @ 250µA 4.3 nC @ 10 V ±20V 454 pF @ 50 V - 2.8W (Ta), 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (3x3.3)
    BUK9M6R0-40HX

    BUK9M6R0-40HX

    MOSFET N-CH 40V 50A LFPAK33

    Nexperia USA Inc.

    		 3,800 -
    RFQ
    		BUK9M6R0-40HX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.15V @ 1mA 36 nC @ 10 V +16V, -10V 2470 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    NTMFS5C442NLT1G

    NTMFS5C442NLT1G

    MOSFET N-CH 40V 27A/130A 5DFN

    onsemi

    		 281 -
    RFQ
    		NTMFS5C442NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 130A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.1W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    TPN5900CNH,L1Q

    TPN5900CNH,L1Q

    MOSFET N-CH 150V 9A 8TSON

    Toshiba Semiconductor and Storage

    		 4,036 -
    RFQ
    		TPN5900CNH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Ta) 10V 59mOhm @ 4.5A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 75 V - 700mW (Ta), 39W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
    TK560P65Y,RQ

    TK560P65Y,RQ

    MOSFET N-CHANNEL 650V 7A DPAK

    Toshiba Semiconductor and Storage

    		 3,844 -
    RFQ
    		TK560P65Y,RQ

    Datenblatt

         		DTMOSV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
    NTTFS2D8N04HLTAG

    NTTFS2D8N04HLTAG

    MOSFET N-CH 40V 24A/104A 8WDFN

    onsemi

    		 885 -
    RFQ
    		NTTFS2D8N04HLTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 104A (Tc) 4.5V, 10V 2.75mOhm @ 16A, 10V 2V @ 80µA 32 nC @ 10 V ±20V 1960 pF @ 20 V - 3.2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    SQS460EN-T1_BE3

    SQS460EN-T1_BE3

    MOSFET N-CH 60V 8A PPAK1212-8

    Vishay Siliconix

    		 57,855 -
    RFQ
    		SQS460EN-T1_BE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 5.3A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 755 pF @ 25 V - 39W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 1212-8
    PSMN7R5-60YLX

    PSMN7R5-60YLX

    MOSFET N-CH 60V 86A LFPAK56

    Nexperia USA Inc.

    		 38,223 -
    RFQ
    		PSMN7R5-60YLX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 5V, 10V 7.5mOhm @ 20A, 10V 2.1V @ 1mA 31 nC @ 5 V ±20V 4570 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    PSMN011-80YS,115

    PSMN011-80YS,115

    MOSFET N-CH 80V 67A LFPAK56

    Nexperia USA Inc.

    		 11,748 -
    RFQ
    		PSMN011-80YS,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 67A (Tc) 10V 11mOhm @ 25A, 10V 4V @ 1mA 45 nC @ 10 V ±20V 2800 pF @ 40 V - 117W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRFRC20TRPBF-BE3

    IRFRC20TRPBF-BE3

    MOSFET N-CH 600V 2A DPAK

    Vishay Siliconix

    		 3,935 -
    RFQ
    		IRFRC20TRPBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    IRFR9024TRPBF-BE3

    IRFR9024TRPBF-BE3

    MOSFET P-CH 60V 8.8A DPAK

    Vishay Siliconix

    		 3,468 -
    RFQ
    		IRFR9024TRPBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    IRFZ14PBF-BE3

    IRFZ14PBF-BE3

    MOSFET N-CH 60V 10A TO220AB

    Vishay Siliconix

    		 1,812 -
    RFQ
    		IRFZ14PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) - 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
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