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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RQ3E180AJTB1

    RQ3E180AJTB1

    NCH 30V 18A MIDDLE POWER MOSFET:

    Rohm Semiconductor

    		 898 -
    RFQ
    		RQ3E180AJTB1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 30A (Tc) 2.5V, 4.5V 4.5mOhm @ 18A, 4.5V 1.5V @ 11mA 39 nC @ 4.5 V ±12V 4290 pF @ 15 V - 2W (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    IRF9520PBF-BE3

    IRF9520PBF-BE3

    MOSFET P-CH 100V 6.8A TO220AB

    Vishay Siliconix

    		 699 -
    RFQ
    		IRF9520PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) - 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRLR110PBF

    IRLR110PBF

    MOSFET N-CH 100V 4.3A DPAK

    Vishay Siliconix

    		 210 -
    RFQ
    		IRLR110PBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IPC100N04S5L1R9ATMA1

    IPC100N04S5L1R9ATMA1

    MOSFET N-CH 40V 100A 8TDSON-34

    Infineon Technologies

    		 74,418 -
    RFQ
    		IPC100N04S5L1R9ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 50µA 81 nC @ 10 V ±16V 4310 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-34
    BSC0502NSIATMA1

    BSC0502NSIATMA1

    MOSFET N-CH 30V 26A/100A TDSON

    Infineon Technologies

    		 23,737 -
    RFQ
    		BSC0502NSIATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 100A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1600 pF @ 15 V - 2.5W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
    MCAC60N10Y-TP

    MCAC60N10Y-TP

    MOSFET N-CH 100 60A DFN5060

    Micro Commercial Co

    		 15,799 -
    RFQ
    		MCAC60N10Y-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A 10V 8.6mOhm @ 20A, 10V 3.4V @ 250µA 32 nC @ 10 V ±20V 2431 pF @ 50 V - 88W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
    RQ3G150GNTB

    RQ3G150GNTB

    MOSFET N-CHANNEL 40V 39A 8HSMT

    Rohm Semiconductor

    		 8,789 -
    RFQ
    		RQ3G150GNTB

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 39A (Tc) 10V 7.2mOhm @ 15A, 10V 2.5V @ 1mA 11.6 nC @ 4.5 V ±20V 1450 pF @ 20 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    SQS140ENW-T1_GE3

    SQS140ENW-T1_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)

    Vishay Siliconix

    		 7,462 -
    RFQ
    		SQS140ENW-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 214A (Tc) 10V 2.53mOhm @ 10A, 10V 3.5V @ 250µA 57 nC @ 10 V ±20V 3111 pF @ 25 V - 197W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
    BUK9Y09-40B,115

    BUK9Y09-40B,115

    MOSFET N-CH 40V 75A LFPAK56

    Nexperia USA Inc.

    		 2,707 -
    RFQ
    		BUK9Y09-40B,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 5V, 10V 8mOhm @ 25A, 10V 2.15V @ 1mA 30 nC @ 5 V ±15V 2866 pF @ 25 V - 105.3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    IPD023N04NF2SATMA1

    IPD023N04NF2SATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 1,667 -
    RFQ
    		IPD023N04NF2SATMA1

    Datenblatt

         		StrongIRFET™2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 143A (Tc) 6V, 10V 2.3mOhm @ 70A, 10V 3.4V @ 81µA 102 nC @ 10 V ±20V 4800 pF @ 20 V - 3W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    RCX080N25

    RCX080N25

    MOSFET N-CH 250V 8A TO220FM

    Rohm Semiconductor

    		 637 -
    RFQ
    		RCX080N25

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 600mOhm @ 4A, 10V 5V @ 1mA 15 nC @ 10 V ±30V 840 pF @ 25 V - 2.23W (Ta), 35W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    RCX051N25

    RCX051N25

    MOSFET N-CH 250V 5A TO220FM

    Rohm Semiconductor

    		 407 -
    RFQ
    		RCX051N25

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 5A (Tc) 10V 1.36Ohm @ 2.5A, 10V 5.5V @ 1mA 8.5 nC @ 10 V ±30V 350 pF @ 25 V - 2.23W (Ta), 30W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    AON6482

    AON6482

    MOSFET N-CH 100V 5.5A/28A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 4,401 -
    RFQ
    		AON6482

    Datenblatt

         		- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Ta), 28A (Tc) 4.5V, 10V 37mOhm @ 10A, 10V 2.7V @ 250µA 44 nC @ 10 V ±20V 2000 pF @ 50 V - 2.5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    IRFR48ZTRPBF

    IRFR48ZTRPBF

    MOSFET N-CH 55V 42A DPAK

    Infineon Technologies

    		 4,233 -
    RFQ
    		IRFR48ZTRPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    STU2N80K5

    STU2N80K5

    MOSFET N-CH 800V 2A IPAK

    STMicroelectronics

    		 3,049 -
    RFQ
    		STU2N80K5

    Datenblatt

         		SuperMESH5™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V 30V 105 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    PSMN016-100YS,115

    PSMN016-100YS,115

    MOSFET N-CH 100V 51A LFPAK56

    Nexperia USA Inc.

    		 2,436 -
    RFQ
    		PSMN016-100YS,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 10V 16.3mOhm @ 15A, 10V 4V @ 1mA 54 nC @ 10 V ±20V 2744 pF @ 50 V - 117W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    SQ4840CEY-T1_GE3

    SQ4840CEY-T1_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)

    Vishay Siliconix

    		 2,381 -
    RFQ
    		SQ4840CEY-T1_GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 20.7A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.5V @ 250µA 68 nC @ 10 V ±20V 2550 pF @ 20 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    FQPF2N80

    FQPF2N80

    MOSFET N-CH 800V 1.5A TO220F

    onsemi

    		 787 -
    RFQ
    		FQPF2N80

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 1.5A (Tc) 10V 6.3Ohm @ 750mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    VN2406L-G

    VN2406L-G

    MOSFET N-CH 240V 190MA TO92-3

    Microchip Technology

    		 1,271 -
    RFQ
    		VN2406L-G

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Bag Active N-Channel MOSFET (Metal Oxide) 240 V 190mA (Tj) 2.5V, 10V 6Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    AOB414

    AOB414

    MOSFET N-CH 100V 6.6A/51A TO263

    Alpha & Omega Semiconductor Inc.

    		 292 -
    RFQ
    		AOB414

    Datenblatt

         		SDMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6.6A (Ta), 51A (Tc) 7V, 10V 25mOhm @ 20A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 2200 pF @ 50 V - 2.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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