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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI4114DY-T1-GE3

    SI4114DY-T1-GE3

    MOSFET N-CH 20V 20A 8SO

    Vishay Siliconix

    		 281,301 -
    RFQ
    		SI4114DY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.1V @ 250µA 95 nC @ 10 V ±16V 3700 pF @ 10 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    PSMN4R0-40YS,115

    PSMN4R0-40YS,115

    MOSFET N-CH 40V 100A LFPAK56

    Nexperia USA Inc.

    		 65,503 -
    RFQ
    		PSMN4R0-40YS,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.2mOhm @ 15A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 2410 pF @ 20 V - 106W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    SISS30ADN-T1-GE3

    SISS30ADN-T1-GE3

    MOSFET N-CH 80V 15.9A/54.7A PPAK

    Vishay Siliconix

    		 8,631 -
    RFQ
    		SISS30ADN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.9A (Ta), 54.7A (Tc) 7.5V, 10V 8.9mOhm @ 10A, 10V 3.5V @ 250µA 30 nC @ 10 V ±20V 1295 pF @ 40 V - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    CSD17306Q5A

    CSD17306Q5A

    MOSFET N-CH 30V 24A/100A 8VSON

    Texas Instruments

    		 3,928 -
    RFQ
    		CSD17306Q5A

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 100A (Tc) 3V, 8V 3.7mOhm @ 22A, 8V 1.6V @ 250µA 15.3 nC @ 4.5 V +10V, -8V 2170 pF @ 15 V - 3.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    IPD18DP10LMATMA1

    IPD18DP10LMATMA1

    TRENCH >=100V PG-TO252-3

    Infineon Technologies

    		 2,081 -
    RFQ
    		IPD18DP10LMATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.5A (Ta), 13.9A (Tc) 4.5V, 10V 178mOhm @ 13A, 10V 2V @ 1.04mA 42 nC @ 10 V ±20V 2100 pF @ 50 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    ISZ0602NLSATMA1

    ISZ0602NLSATMA1

    MOSFET N-CH 80V 12A/64A TSDSON

    Infineon Technologies

    		 9,817 -
    RFQ
    		ISZ0602NLSATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 64A (Tc) 4.5V, 10V 7.8mOhm @ 20A, 10V 2.3V @ 29µA 29 nC @ 10 V ±20V 1860 pF @ 40 V - 2.1W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-26
    ISZ019N03L5SATMA1

    ISZ019N03L5SATMA1

    MOSFET N-CH 30V 22A/40A TSDSON

    Infineon Technologies

    		 7,128 -
    RFQ
    		ISZ019N03L5SATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 40A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - - -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-FL
    STD3N80K5

    STD3N80K5

    MOSFET N-CH 800V 2.5A DPAK

    STMicroelectronics

    		 5,369 -
    RFQ
    		STD3N80K5

    Datenblatt

         		SuperMESH5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 3.5Ohm @ 1A, 10V 5V @ 100µA 9.5 nC @ 10 V ±30V 130 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    AOD600A70R

    AOD600A70R

    MOSFET N-CH 700V 8.5A TO252

    Alpha & Omega Semiconductor Inc.

    		 4,607 -
    RFQ
    		AOD600A70R

    Datenblatt

         		aMOS5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 2.5A, 10V 4V @ 250µA 15.5 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    BUK9675-55A,118

    BUK9675-55A,118

    MOSFET N-CH 55V 20A D2PAK

    Nexperia USA Inc.

    		 3,826 -
    RFQ
    		BUK9675-55A,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 68mOhm @ 10A, 10V 2V @ 1mA - ±10V 643 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IRFR9220TRPBF-BE3

    IRFR9220TRPBF-BE3

    MOSFET P-CH 200V 3.6A DPAK

    Vishay Siliconix

    		 3,132 -
    RFQ
    		IRFR9220TRPBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NVMFS5C677NLT1G

    NVMFS5C677NLT1G

    MOSFET N-CH 60V 11A/36A 5DFN

    onsemi

    		 2,694 -
    RFQ
    		NVMFS5C677NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 36A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2V @ 25µA 9.7 nC @ 10 V ±20V 620 pF @ 25 V - 3.5W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IPD096N08N3GATMA1

    IPD096N08N3GATMA1

    MOSFET N-CH 80V 73A TO252-3

    Infineon Technologies

    		 2,463 -
    RFQ
    		IPD096N08N3GATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 73A (Tc) 6V, 10V 9.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IRFR9210PBF

    IRFR9210PBF

    MOSFET P-CH 200V 1.9A DPAK

    Vishay Siliconix

    		 2,125 -
    RFQ
    		IRFR9210PBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    DMPH4015SPSQ-13

    DMPH4015SPSQ-13

    MOSFET P-CH 40V 50A PWRDI5060-8

    Diodes Incorporated

    		 1,995 -
    RFQ
    		DMPH4015SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 10mOhm @ 9.8A, 10V 2.5V @ 250µA 91 nC @ 10 V ±25V 4234 pF @ 20 V - 2.6W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8
    SIR418DP-T1-GE3

    SIR418DP-T1-GE3

    MOSFET N-CH 40V 40A PPAK SO-8

    Vishay Siliconix

    		 14,525 -
    RFQ
    		SIR418DP-T1-GE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 2410 pF @ 20 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IPD60R600C6ATMA1

    IPD60R600C6ATMA1

    MOSFET N-CH 600V 7.3A TO252-3

    Infineon Technologies

    		 8,732 -
    RFQ
    		IPD60R600C6ATMA1

    Datenblatt

         		CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    SIR696DP-T1-GE3

    SIR696DP-T1-GE3

    MOSFET N-CH 125V 60A PPAK SO-8

    Vishay Siliconix

    		 5,157 -
    RFQ
    		SIR696DP-T1-GE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 125 V 60A (Tc) 7.5V, 10V 11.5mOhm @ 20A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1410 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI4160DY-T1-GE3

    SI4160DY-T1-GE3

    MOSFET N-CH 30V 25.4A 8SO

    Vishay Siliconix

    		 2,494 -
    RFQ
    		SI4160DY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 25.4A (Tc) 4.5V, 10V 4.9mOhm @ 15A, 10V 2.4V @ 250µA 54 nC @ 10 V ±20V 2071 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    TP0620N3-G

    TP0620N3-G

    MOSFET P-CH 200V 175MA TO92-3

    Microchip Technology

    		 791 -
    RFQ
    		TP0620N3-G

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Bag Active P-Channel MOSFET (Metal Oxide) 200 V 175mA (Tj) 5V, 10V 12Ohm @ 200mA, 10V 2.4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
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