FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IRF530PBF-BE3

IRF530PBF-BE3

MOSFET N-CH 100V 14A TO220AB

Vishay Siliconix

644 -
RFQ
IRF530PBF-BE3

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
TPH7R506NH,L1Q

TPH7R506NH,L1Q

MOSFET N-CH 60V 22A 8SOP

Toshiba Semiconductor and Storage

25,501 -
RFQ
TPH7R506NH,L1Q

Datenblatt

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta) 10V 7.5mOhm @ 11A, 10V 4V @ 300µA 31 nC @ 10 V ±20V 2320 pF @ 30 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
RXH090N03TB1

RXH090N03TB1

4V DRIVE NCH MOSFET: MOSFETS ARE

Rohm Semiconductor

1,520 -
RFQ
RXH090N03TB1

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4V, 10V 17mOhm @ 9A, 10V 2.5V @ 1mA 6.8 nC @ 5 V ±20V 440 pF @ 10 V - 2W (Ta) 150°C - - Surface Mount 8-SOP
FDPF3860T

FDPF3860T

MOSFET N-CH 100V 20A TO220F

onsemi

179 -
RFQ
FDPF3860T

Datenblatt

PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 38.2mOhm @ 5.9A, 10V 4.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 33.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
TK7S10N1Z,LQ

TK7S10N1Z,LQ

MOSFET N-CH 100V 7A DPAK

Toshiba Semiconductor and Storage

6,884 -
RFQ
TK7S10N1Z,LQ

Datenblatt

U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta) 10V 48mOhm @ 3.5A, 10V 4V @ 100µA 7.1 nC @ 10 V ±20V 470 pF @ 10 V - 50W (Tc) 175°C (TJ) - - Surface Mount DPAK+
SIR464DP-T1-GE3

SIR464DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix

5,845 -
RFQ
SIR464DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 3.1mOhm @ 15A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 3545 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
STP3NK90ZFP

STP3NK90ZFP

MOSFET N-CH 900V 3A TO220FP

STMicroelectronics

379 -
RFQ
STP3NK90ZFP

Datenblatt

SuperMESH™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 50µA 22.7 nC @ 10 V ±30V 590 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
BUK7Y12-55B,115

BUK7Y12-55B,115

MOSFET N-CH 55V 61.8A LFPAK56

Nexperia USA Inc.

8,862 -
RFQ
BUK7Y12-55B,115

Datenblatt

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 61.8A (Tc) 10V 12mOhm @ 20A, 10V 4V @ 1mA 35.2 nC @ 10 V ±20V 2067 pF @ 25 V - 105W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
CSD16327Q3T

CSD16327Q3T

MOSFET N-CH 25V 60A 8VSON

Texas Instruments

5,980 -
RFQ
CSD16327Q3T

Datenblatt

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 3V, 8V 4mOhm @ 24A, 8V 1.4V @ 250µA 8.4 nC @ 4.5 V +10V, -8V 1300 pF @ 12.5 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (3.3x3.3)
SIR4604LDP-T1-GE3

SIR4604LDP-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

5,326 -
RFQ
SIR4604LDP-T1-GE3

Datenblatt

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15.6A (Ta), 51A (Tc) 4.5V, 10V 8.9mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1180 pF @ 30 V - 3.9W (Ta), 41.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQJA66EP-T1_GE3

SQJA66EP-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix

2,816 -
RFQ
SQJA66EP-T1_GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3mOhm @ 10A, 10V 3.3V @ 250µA 98 nC @ 10 V ±20V 5400 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
CSD17577Q3AT

CSD17577Q3AT

MOSFET N-CH 30V 35A 8VSON

Texas Instruments

2,689 -
RFQ
CSD17577Q3AT

Datenblatt

NexFET™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 4.8mOhm @ 16A, 10V 1.8V @ 250µA 35 nC @ 10 V ±20V 2310 pF @ 15 V - 2.8W (Ta), 53W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (3x3.3)
AON6268

AON6268

MOSFET N-CH 60V 44A 8DFN

Alpha & Omega Semiconductor Inc.

16,512 -
RFQ
AON6268

Datenblatt

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 44A (Tc) 10V 4.7mOhm @ 20A, 10V 2.3V @ 250µA 65 nC @ 10 V ±20V 2520 pF @ 30 V - 56W (Tc) -55°C ~ 150°C (TA) - - Surface Mount 8-DFN (5x6)
SQD10950E_GE3

SQD10950E_GE3

MOSFET N-CH 250V 11.5A TO252AA

Vishay Siliconix

3,918 -
RFQ
SQD10950E_GE3

Datenblatt

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 11.5A (Tc) 7.5V, 10V 162mOhm @ 12A, 10V 3.5V @ 250µA 16 nC @ 10 V ±20V 785 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
STD5NK40ZT4

STD5NK40ZT4

MOSFET N-CH 400V 3A DPAK

STMicroelectronics

1,867 -
RFQ
STD5NK40ZT4

Datenblatt

SuperMESH™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V 4.5V @ 50µA 17 nC @ 10 V ±30V 305 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
NVTFS4C10NWFTAG

NVTFS4C10NWFTAG

MOSFET N-CH 30V 15.3A/47A 8WDFN

onsemi

1,120 -
RFQ
NVTFS4C10NWFTAG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15.3A (Ta), 47A (Tc) 4.5V, 10V 7.4mOhm @ 30A, 10V 2.2V @ 250µA 19.3 nC @ 10 V ±20V 993 pF @ 15 V - 3W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
TK4R3E06PL,S1X

TK4R3E06PL,S1X

MOSFET N-CH 60V 80A TO220

Toshiba Semiconductor and Storage

109 -
RFQ
TK4R3E06PL,S1X

Datenblatt

U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 4.5V 2.5V @ 500µA 48.2 nC @ 10 V ±20V 3280 pF @ 30 V - 87W (Tc) 175°C (TJ) - - Through Hole TO-220
SIJ462ADP-T1-GE3

SIJ462ADP-T1-GE3

MOSFET N-CH 60V 15.8A/39.3A PPAK

Vishay Siliconix

8,968 -
RFQ
SIJ462ADP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15.8A (Ta), 39.3A (Tc) 4.5V, 10V 7.2mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1235 pF @ 30 V - 3.6W (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SI4166DY-T1-GE3

SI4166DY-T1-GE3

MOSFET N-CH 30V 30.5A 8SO

Vishay Siliconix

7,780 -
RFQ
SI4166DY-T1-GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30.5A (Tc) 4.5V, 10V 3.9mOhm @ 15A, 10V 2.4V @ 250µA 65 nC @ 10 V ±20V 2730 pF @ 15 V - 3W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IPD60N10S412ATMA1

IPD60N10S412ATMA1

MOSFET N-CH 100V 60A TO252-3

Infineon Technologies

5,719 -
RFQ
IPD60N10S412ATMA1

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 12.2mOhm @ 60A, 10V 3.5V @ 46µA 34 nC @ 10 V ±20V 2470 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-313
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