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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIR616DP-T1-GE3

    SIR616DP-T1-GE3

    MOSFET N-CH 200V 20.2A PPAK SO-8

    Vishay Siliconix

    		 2,870 -
    RFQ
    		SIR616DP-T1-GE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 20.2A (Tc) 7.5V, 10V 50.5mOhm @ 10A, 10V 4V @ 250µA 28 nC @ 7.5 V ±20V 1450 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PSMN015-100YLX

    PSMN015-100YLX

    MOSFET N-CH 100V 69A LFPAK56

    Nexperia USA Inc.

    		 2,556 -
    RFQ
    		PSMN015-100YLX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 5V, 10V 14.7mOhm @ 20A, 10V 2.1V @ 1mA 86.3 nC @ 10 V ±20V 6139 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    RD3L080SNFRATL

    RD3L080SNFRATL

    MOSFET N-CH 60V 8A TO252

    Rohm Semiconductor

    		 6,988 -
    RFQ
    		RD3L080SNFRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 4V, 10V 80mOhm @ 8A, 10V 2.5V @ 1mA 9.4 nC @ 10 V ±20V 380 pF @ 10 V - 15W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    RD3G03BATTL1

    RD3G03BATTL1

    PCH -40V -35A POWER MOSFET - RD3

    Rohm Semiconductor

    		 4,298 -
    RFQ
    		RD3G03BATTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 19.1mOhm @ 35A, 10V 2.5V @ 1mA 38 nC @ 10 V ±20V 2100 pF @ 20 V - 56W (Tc) 150°C (TJ) - - Surface Mount TO-252
    SIR188DP-T1-RE3

    SIR188DP-T1-RE3

    MOSFET N-CH 60V 25.5A/60A PPAK

    Vishay Siliconix

    		 2,574 -
    RFQ
    		SIR188DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 25.5A (Ta), 60A (Tc) 7.5V, 10V 3.85mOhm @ 10A, 10V 3.6V @ 250µA 44 nC @ 10 V ±20V 1920 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STD10N60DM2

    STD10N60DM2

    MOSFET N-CH 650V 8A DPAK

    STMicroelectronics

    		 2,263 -
    RFQ
    		STD10N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 530mOhm @ 4A, 10V 5V @ 250µA 15 nC @ 10 V ±25V 529 pF @ 100 V - 109W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    STD35NF06T4

    STD35NF06T4

    MOSFET N-CH 60V 35A DPAK

    STMicroelectronics

    		 4,632 -
    RFQ
    		STD35NF06T4

    Datenblatt

         		STripFET™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 10V 20mOhm @ 17.5A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    CSD17577Q5AT

    CSD17577Q5AT

    MOSFET N-CH 30V 60A 8VSON

    Texas Instruments

    		 2,759 -
    RFQ
    		CSD17577Q5AT

    Datenblatt

         		NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 4.2mOhm @ 18A, 10V 1.8V @ 250µA 35 nC @ 10 V ±20V 2310 pF @ 15 V - 3W (Ta), 53W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSONP (5x6)
    SQ4483EY-T1_GE3

    SQ4483EY-T1_GE3

    MOSFET P-CHANNEL 30V 30A 8SOIC

    Vishay Siliconix

    		 2,418 -
    RFQ
    		SQ4483EY-T1_GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 4500 pF @ 15 V - 7W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    SQJ460AEP-T1_GE3

    SQJ460AEP-T1_GE3

    MOSFET N-CH 60V 32A PPAK SO-8

    Vishay Siliconix

    		 1,815 -
    RFQ
    		SQJ460AEP-T1_GE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 4.5V, 10V 9.6mOhm @ 18A, 10V 2.5V @ 250µA 106 nC @ 10 V ±20V 4795 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQ4483EY-T1_BE3

    SQ4483EY-T1_BE3

    MOSFET P-CHANNEL 30V 30A 8SOIC

    Vishay Siliconix

    		 1,552 -
    RFQ
    		SQ4483EY-T1_BE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 4500 pF @ 15 V - 7W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    CSD18503KCS

    CSD18503KCS

    MOSFET N-CH 40V 100A TO220-3

    Texas Instruments

    		 791 -
    RFQ
    		CSD18503KCS

    Datenblatt

         		NexFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 2.3V @ 250µA 36 nC @ 10 V ±20V 3150 pF @ 20 V - 188W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPP50R280CEXKSA1

    IPP50R280CEXKSA1

    MOSFET N-CH 500V 13A TO220-3

    Infineon Technologies

    		 323 -
    RFQ
    		IPP50R280CEXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    STL60N10F7

    STL60N10F7

    MOSFET N-CH 100V 46A POWERFLAT

    STMicroelectronics

    		 14,477 -
    RFQ
    		STL60N10F7

    Datenblatt

         		DeepGATE™, STripFET™ VII 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 10V 18mOhm @ 6A, 10V 4.5V @ 250µA 25 nC @ 10 V 20V 1640 pF @ 50 V - 5W (Ta), 72W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerFlat™ (5x6)
    PSMN3R2-40YLDX

    PSMN3R2-40YLDX

    MOSFET N-CH 40V 120A LFPAK56

    Nexperia USA Inc.

    		 2,828 -
    RFQ
    		PSMN3R2-40YLDX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.3mOhm @ 25A, 10V 2.05V @ 1mA 57 nC @ 10 V ±20V 4103 pF @ 20 V Schottky Diode (Body) 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IPD80R2K7C3AATMA1

    IPD80R2K7C3AATMA1

    MOSFET N-CH TO252-3

    Infineon Technologies

    		 2,495 -
    RFQ
    		IPD80R2K7C3AATMA1

    Datenblatt

         		CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V 3.9V @ 250µA 1.5 nC @ 10 V ±20V 290 pF @ 100 V - 42W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA (DPAK)
    SIR606DP-T1-GE3

    SIR606DP-T1-GE3

    MOSFET N-CH 100V 37A PPAK SO-8

    Vishay Siliconix

    		 5,082 -
    RFQ
    		SIR606DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 37A (Tc) 6V, 10V 16.2mOhm @ 15A, 10V 3.6V @ 250µA 22 nC @ 6 V ±20V 1360 pF @ 50 V - 44.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    NVMFS9D6P04M8LT1G

    NVMFS9D6P04M8LT1G

    MV8 P-CH 40V SO-8FL PORTFOLIO EX

    onsemi

    		 3,410 -
    RFQ
    		NVMFS9D6P04M8LT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 17.1A (Ta), 77A (Tc) 4.5V, 10V 9.5mOhm @ 20A, 10V 2.4V @ 580µA 14.47 nC @ 10 V ±20V 2002 pF @ 20 V - 3.7W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    PSMN1R7-25YLDX

    PSMN1R7-25YLDX

    MOSFET N-CH 25V 100A LFPAK56

    Nexperia USA Inc.

    		 1,500 -
    RFQ
    		PSMN1R7-25YLDX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 1.7mOhm @ 25A, 10V 2.2V @ 1mA 46.7 nC @ 10 V ±20V 3415 pF @ 12 V Schottky Diode (Body) 135W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IRFU220PBF

    IRFU220PBF

    MOSFET N-CH 200V 4.8A TO251AA

    Vishay Siliconix

    		 1,496 -
    RFQ
    		IRFU220PBF

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 4.8A (Tc) 10V 800mOhm @ 2.9A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
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