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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDS3580

    FDS3580

    MOSFET N-CH 80V 7.6A 8SOIC

    onsemi

    		 14,496 -
    RFQ
    		FDS3580

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7.6A (Ta) 6V, 10V 29mOhm @ 7.6A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    AOD240

    AOD240

    MOSFET N-CH 40V 23A/70A TO252

    Alpha & Omega Semiconductor Inc.

    		 9,718 -
    RFQ
    		AOD240

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 70A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2.2V @ 250µA 60 nC @ 10 V ±20V 4300 pF @ 20 V - 2.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    TPH2010FNH,L1Q

    TPH2010FNH,L1Q

    MOSFET N-CH 250V 5.6A 8SOP

    Toshiba Semiconductor and Storage

    		 8,813 -
    RFQ
    		TPH2010FNH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 5.6A (Ta) 10V 198mOhm @ 2.8A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 100 V - 1.6W (Ta), 42W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    DMNH6012SPSQ-13

    DMNH6012SPSQ-13

    MOSFET N-CH 60V 50A PWRDI5060-8

    Diodes Incorporated

    		 4,220 -
    RFQ
    		DMNH6012SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 250µA 35.2 nC @ 10 V ±20V 1926 pF @ 30 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
    FDD13AN06A0-F085

    FDD13AN06A0-F085

    MOSFET N-CH 60V 9.9A/50A TO252AA

    onsemi

    		 2,274 -
    RFQ
    		FDD13AN06A0-F085

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9.9A (Ta), 50A (Tc) 6V, 10V 13.5mOhm @ 50A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    IPP129N10NF2SAKMA1

    IPP129N10NF2SAKMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,382 -
    RFQ
    		IPP129N10NF2SAKMA1

    Datenblatt

         		StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 52A (Tc) 6V, 10V 12.9mOhm @ 30A, 10V 3.8V @ 30µA 28 nC @ 10 V ±20V 1300 pF @ 50 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    IRL510STRLPBF

    IRL510STRLPBF

    MOSFET N-CH 100V 5.6A D2PAK

    Vishay Siliconix

    		 601 -
    RFQ
    		IRL510STRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 4V, 5V 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    MCB70N10YB-TP

    MCB70N10YB-TP

    MOSFET N-CH D2-PAK

    Micro Commercial Co

    		 226 -
    RFQ
    		MCB70N10YB-TP

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 8.6mOhm @ 20A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 2270 pF @ 50 V - 125W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    DMT6005LSS-13

    DMT6005LSS-13

    MOSFET N-CH 60V 13.5A 8SO

    Diodes Incorporated

    		 6,739 -
    RFQ
    		DMT6005LSS-13

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 13.5A (Ta) 4.5V, 10V 6mOhm @ 20A, 10V 3V @ 250µA 47.1 nC @ 10 V ±20V 2962 pF @ 30 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SQJ886EP-T1_GE3

    SQJ886EP-T1_GE3

    MOSFET N-CH 40V 60A PPAK SO-8

    Vishay Siliconix

    		 4,801 -
    RFQ
    		SQJ886EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 4.5mOhm @ 15.3A, 10V 2.5V @ 250µA 65 nC @ 10 V ±20V 2922 pF @ 20 V - 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    STD2N62K3

    STD2N62K3

    MOSFET N-CH 620V 2.2A DPAK

    STMicroelectronics

    		 3,882 -
    RFQ
    		STD2N62K3

    Datenblatt

         		SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 620 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 340 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK15S04N1L,LQ

    TK15S04N1L,LQ

    MOSFET N-CH 40V 15A DPAK

    Toshiba Semiconductor and Storage

    		 1,595 -
    RFQ
    		TK15S04N1L,LQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta) 4.5V, 10V 17.8mOhm @ 7.5A, 10V 2.5V @ 100µA 10 nC @ 10 V ±20V 610 pF @ 10 V - 46W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    NP15P04SLG-E1-AY

    NP15P04SLG-E1-AY

    MOSFET P-CH 40V 15A TO252

    Renesas Electronics Corporation

    		 12,470 -
    RFQ
    		NP15P04SLG-E1-AY

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 15A (Ta) 4.5V, 10V 40mOhm @ 7.5A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 1100 pF @ 10 V - 1.2W (Ta), 30W (Tc) 175°C (TJ) - - Surface Mount TO-252 (MP-3ZK)
    SIR188LDP-T1-RE3

    SIR188LDP-T1-RE3

    N-CHANNEL 60-V (D-S) MOSFET POWE

    Vishay Siliconix

    		 4,115 -
    RFQ
    		SIR188LDP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 25.8A (Ta), 93.6A (Tc) 4.5V, 10V 3.75mOhm @ 15A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2300 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RJK0354DSP-00#J0

    RJK0354DSP-00#J0

    MOSFET N-CH 30V 16A 8SOP

    Renesas Electronics Corporation

    		 3,853 -
    RFQ
    		RJK0354DSP-00#J0

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 7mOhm @ 8A, 10V - 12 nC @ 4.5 V ±20V 1740 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    NVD5C486NLT4G

    NVD5C486NLT4G

    MOSFET N-CH 40V 9.8A/24A DPAK

    onsemi

    		 1,897 -
    RFQ
    		NVD5C486NLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 9.8A (Ta), 24A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.2V @ 20µA 9.8 nC @ 10 V ±20V 530 pF @ 25 V - 2.9W (Ta), 18W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    SUD90330E-GE3

    SUD90330E-GE3

    MOSFET N-CH 200V 35.8A TO252AA

    Vishay Siliconix

    		 1,890 -
    RFQ
    		SUD90330E-GE3

    Datenblatt

         		ThunderFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 35.8A (Tc) 7.5V, 10V 37.5mOhm @ 12.2A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1172 pF @ 100 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    IRFR120TRPBF

    IRFR120TRPBF

    MOSFET N-CH 100V 7.7A DPAK

    Vishay Siliconix

    		 1,648 -
    RFQ
    		IRFR120TRPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IPC100N04S51R7ATMA1

    IPC100N04S51R7ATMA1

    MOSFET N-CH 40V 100A 8TDSON-34

    Infineon Technologies

    		 19,970 -
    RFQ
    		IPC100N04S51R7ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 7V, 10V 1.7mOhm @ 50A, 10V 3.4V @ 60µA 83 nC @ 10 V ±20V 4810 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-34
    IPC100N04S5L1R5ATMA1

    IPC100N04S5L1R5ATMA1

    MOSFET N-CH 40V 100A 8TDSON-34

    Infineon Technologies

    		 10,335 -
    RFQ
    		IPC100N04S5L1R5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V 2V @ 60µA 95 nC @ 10 V ±16V 5340 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-34
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