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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFB7540PBF

    IRFB7540PBF

    MOSFET N-CH 60V 110A TO220

    Infineon Technologies

    		 203 -
    RFQ
    		IRFB7540PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    IPD50N06S2L13ATMA2

    IPD50N06S2L13ATMA2

    MOSFET N-CH 55V 50A TO252-31

    Infineon Technologies

    		 4,787 -
    RFQ
    		IPD50N06S2L13ATMA2

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 4.5V, 10V 12.7mOhm @ 34A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    RD3P100SNFRATL

    RD3P100SNFRATL

    MOSFET N-CH 100V 10A TO252

    Rohm Semiconductor

    		 1,851 -
    RFQ
    		RD3P100SNFRATL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4V, 10V 133mOhm @ 5A, 10V 2.5V @ 1mA 18 nC @ 10 V ±20V 700 pF @ 25 V - 20W (Tc) 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    NTMFS5H419NLT1G

    NTMFS5H419NLT1G

    MOSFET N-CH 40V 29A/155A 5DFN

    onsemi

    		 1,340 -
    RFQ
    		NTMFS5H419NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 155A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2V @ 250µA 45 nC @ 10 V ±20V 2900 pF @ 20 V - 3.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SIJ470DP-T1-GE3

    SIJ470DP-T1-GE3

    MOSFET N-CH 100V 58.8A PPAK SO-8

    Vishay Siliconix

    		 680 -
    RFQ
    		SIJ470DP-T1-GE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 58.8A (Tc) 7.5V, 10V 9.1mOhm @ 20A, 10V 3.5V @ 250µA 56 nC @ 10 V ±20V 2050 pF @ 50 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRF9Z10PBF

    IRF9Z10PBF

    MOSFET P-CH 60V 6.7A TO220AB

    Vishay Siliconix

    		 364 -
    RFQ
    		IRF9Z10PBF

    Datenblatt

         		- TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    SIJ478DP-T1-GE3

    SIJ478DP-T1-GE3

    MOSFET N-CH 80V 60A PPAK SO-8

    Vishay Siliconix

    		 10,577 -
    RFQ
    		SIJ478DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.6V @ 250µA 54 nC @ 10 V ±20V 1855 pF @ 40 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    STL105N4LF7AG

    STL105N4LF7AG

    MOSFET N-CH 40V 105A POWERFLAT

    STMicroelectronics

    		 10,540 -
    RFQ
    		STL105N4LF7AG

    Datenblatt

         		STripFET™ F7 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 105A (Tc) 4.5V, 10V 4.5mOhm @ 11.5A, 10V 2.5V @ 250µA 23.3 nC @ 10 V ±20V 1500 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    PSMN1R5-30YLC,115

    PSMN1R5-30YLC,115

    MOSFET N-CH 30V 100A LFPAK56

    Nexperia USA Inc.

    		 4,811 -
    RFQ
    		PSMN1R5-30YLC,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.55mOhm @ 25A, 10V 1.95V @ 1mA 65 nC @ 10 V ±20V 4044 pF @ 15 V - 179W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    RJK0332DPB-01#J0

    RJK0332DPB-01#J0

    MOSFET N-CH 30V 35A LFPAK

    Renesas Electronics Corporation

    		 2,500 -
    RFQ
    		RJK0332DPB-01#J0

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 4.7mOhm @ 17.5A, 10V 2.5V @ 1mA 14 nC @ 4.5 V ±20V 2180 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Surface Mount LFPAK
    NVMYS012N10MCLTWG

    NVMYS012N10MCLTWG

    PTNG 100V LL LFPAK4

    onsemi

    		 2,063 -
    RFQ
    		NVMYS012N10MCLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 11.6A (Ta), 52A (Tc) 4.5V, 10V 12.2mOhm @ 14A, 10V 3V @ 77µA 19 nC @ 10 V ±20V 1338 pF @ 50 V - 3.6W (Ta), 72W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    IRFIZ14GPBF

    IRFIZ14GPBF

    MOSFET N-CH 60V 8A TO220-3

    Vishay Siliconix

    		 758 -
    RFQ
    		IRFIZ14GPBF

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 10V 200mOhm @ 4.8A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    NTTFS010N10MCLTAG

    NTTFS010N10MCLTAG

    MOSFET N-CH 100V 10.7A/50A 8WDFN

    onsemi

    		 597 -
    RFQ
    		NTTFS010N10MCLTAG

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10.7A (Ta), 50A (Tc) 4.5V, 10V 10.6mOhm @ 15A, 10V 3V @ 85µA 30 nC @ 10 V ±20V 2150 pF @ 50 V - 2.3W (Ta),52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    IPB057N06NATMA1

    IPB057N06NATMA1

    MOSFET N-CH 60V 17A/45A D2PAK

    Infineon Technologies

    		 395 -
    RFQ
    		IPB057N06NATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 45A (Tc) 6V, 10V 5.7mOhm @ 45A, 10V 2.8V @ 36µA 27 nC @ 10 V ±20V 2000 pF @ 30 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    TK90S06N1L,LXHQ

    TK90S06N1L,LXHQ

    MOSFET N-CH 60V 90A DPAK

    Toshiba Semiconductor and Storage

    		 9,310 -
    RFQ
    		TK90S06N1L,LXHQ

    Datenblatt

         		U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Ta) 4.5V, 10V 3.3mOhm @ 45A, 10V 2.5V @ 500µA 81 nC @ 10 V ±20V 5400 pF @ 10 V - 157W (Tc) 175°C - - Surface Mount DPAK+
    SQ4182EY-T1_GE3

    SQ4182EY-T1_GE3

    MOSFET N-CHANNEL 30V 32A 8SOIC

    Vishay Siliconix

    		 7,500 -
    RFQ
    		SQ4182EY-T1_GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 3.8mOhm @ 14A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5400 pF @ 15 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    TPHR9203PL1,LQ

    TPHR9203PL1,LQ

    UMOS9 SOP-ADV(N) PD=170W F=1MHZ

    Toshiba Semiconductor and Storage

    		 6,098 -
    RFQ
    		TPHR9203PL1,LQ

    Datenblatt

         		U-MOSIX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 0.92mOhm @ 50A, 10V 2.1V @ 500µA 81 nC @ 10 V ±20V 7540 pF @ 15 V - 960mW (Ta), 170W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
    RJK03M5DPA-00#J5A

    RJK03M5DPA-00#J5A

    MOSFET N-CH 30V 30A 8WPAK

    Renesas Electronics Corporation

    		 5,970 -
    RFQ
    		RJK03M5DPA-00#J5A

    Datenblatt

         		- 8-WFDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) 4.5V, 10V 6.5mOhm @ 15A, 10V - 10.4 nC @ 4.5 V ±20V 1890 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
    SQ4182EY-T1_BE3

    SQ4182EY-T1_BE3

    MOSFET N-CHANNEL 30V 32A 8SOIC

    Vishay Siliconix

    		 5,646 -
    RFQ
    		SQ4182EY-T1_BE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 3.8mOhm @ 14A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5400 pF @ 15 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    SQ4184EY-T1_GE3

    SQ4184EY-T1_GE3

    MOSFET N-CH 40V 29A 8SOIC

    Vishay Siliconix

    		 4,533 -
    RFQ
    		SQ4184EY-T1_GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Tc) 4.5V, 10V 4.6mOhm @ 14A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 5400 pF @ 20 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
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