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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PSMN2R0-30YL,115

    PSMN2R0-30YL,115

    MOSFET N-CH 30V 100A LFPAK56

    Nexperia USA Inc.

    		 20,294 -
    RFQ
    		PSMN2R0-30YL,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2mOhm @ 15A, 10V 2.15V @ 1mA 64 nC @ 10 V ±20V 3980 pF @ 12 V - 97W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    SI7322DN-T1-E3

    SI7322DN-T1-E3

    MOSFET N-CH 100V 18A PPAK 1212-8

    Vishay Siliconix

    		 18,590 -
    RFQ
    		SI7322DN-T1-E3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V - 10V 58mOhm @ 5.5A, 10V 4.4V @ 250µA 20 nC @ 10 V ±20V 750 pF @ 50 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SQJ422EP-T1_BE3

    SQJ422EP-T1_BE3

    MOSFET N-CH 40V 75A PPAK SO-8

    Vishay Siliconix

    		 8,765 -
    RFQ
    		SQJ422EP-T1_BE3

    Datenblatt

         		- PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 3.4mOhm @ 18A, 10V 2.5V @ 250µA 100 nC @ 10 V ±20V 5000 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIR108DP-T1-RE3

    SIR108DP-T1-RE3

    MOSFET N-CH 100V 12.4A/45A PPAK

    Vishay Siliconix

    		 5,760 -
    RFQ
    		SIR108DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12.4A (Ta), 45A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 3.6V @ 250µA 41.5 nC @ 10 V ±20V 2060 pF @ 50 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PSMN2R5-40YLDX

    PSMN2R5-40YLDX

    MOSFET N-CH 40V 160A LFPAK56

    Nexperia USA Inc.

    		 3,941 -
    RFQ
    		PSMN2R5-40YLDX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 2.05V @ 1mA 78 nC @ 10 V ±20V 5583 pF @ 20 V Schottky Diode (Body) 147W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    STF10N60DM2

    STF10N60DM2

    MOSFET N-CH 600V 8A TO220FP

    STMicroelectronics

    		 1,890 -
    RFQ
    		STF10N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 530mOhm @ 4A, 10V 5V @ 250µA 15 nC @ 10 V ±25V 529 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPB80N06S4L07ATMA2

    IPB80N06S4L07ATMA2

    MOSFET N-CH 60V 80A TO263-3

    Infineon Technologies

    		 1,423 -
    RFQ
    		IPB80N06S4L07ATMA2

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 40µA 75 nC @ 10 V ±16V 5680 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
    SUM90330E-GE3

    SUM90330E-GE3

    MOSFET N-CH 200V 35.1A TO263

    Vishay Siliconix

    		 1,365 -
    RFQ
    		SUM90330E-GE3

    Datenblatt

         		ThunderFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 35.1A (Tc) 7.5V, 10V 37.5mOhm @ 12.2A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1172 pF @ 100 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FCD2250N80Z

    FCD2250N80Z

    MOSFET N-CH 800V 2.6A DPAK

    onsemi

    		 14,493 -
    RFQ
    		FCD2250N80Z

    Datenblatt

         		SuperFET® II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NVMYS3D3N06CLTWG

    NVMYS3D3N06CLTWG

    MOSFET N-CH 60V 26A/133A 4LFPAK

    onsemi

    		 5,690 -
    RFQ
    		NVMYS3D3N06CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 133A (Tc) 4.5V, 10V 3mOhm @ 50A, 10V 2V @ 250µA 40.7 nC @ 10 V ±20V 2880 pF @ 25 V - 3.9W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
    SISH106DN-T1-GE3

    SISH106DN-T1-GE3

    MOSFET N-CH 20V 12.5A PPAK

    Vishay Siliconix

    		 5,606 -
    RFQ
    		SISH106DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) 2.5V, 4.5V 6.2mOhm @ 19.5A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
    SIJ438DP-T1-GE3

    SIJ438DP-T1-GE3

    MOSFET N-CH 40V 80A PPAK SO-8

    Vishay Siliconix

    		 17,379 -
    RFQ
    		SIJ438DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 1.35mOhm @ 20A, 10V 2.4V @ 250µA 182 nC @ 10 V +20V, -16V 9400 pF @ 20 V - 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI7820DN-T1-GE3

    SI7820DN-T1-GE3

    MOSFET N-CH 200V 1.7A PPAK1212-8

    Vishay Siliconix

    		 11,681 -
    RFQ
    		SI7820DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 1.7A (Ta) 6V, 10V 240mOhm @ 2.6A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SIR800ADP-T1-GE3

    SIR800ADP-T1-GE3

    MOSFET N-CH 20V 50.2A/177A PPAK

    Vishay Siliconix

    		 8,954 -
    RFQ
    		SIR800ADP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 50.2A (Ta), 177A (Tc) 2.5V, 10V 1.35mOhm @ 10A, 10V 1.5V @ 250µA 53 nC @ 10 V +12V, -8V 3415 pF @ 10 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SISS22DN-T1-GE3

    SISS22DN-T1-GE3

    MOSFET N-CH 60V 25A/90.6A PPAK

    Vishay Siliconix

    		 8,125 -
    RFQ
    		SISS22DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta), 90.6A (Tc) 7.5V, 10V 4mOhm @ 15A, 10V 3.6V @ 250µA 44 nC @ 10 V ±20V 1870 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    IRFR1N60ATRPBF

    IRFR1N60ATRPBF

    MOSFET N-CH 600V 1.4A DPAK

    Vishay Siliconix

    		 5,968 -
    RFQ
    		IRFR1N60ATRPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SISS46DN-T1-GE3

    SISS46DN-T1-GE3

    MOSFET N-CH 100V 12.5/45.3A PPAK

    Vishay Siliconix

    		 5,918 -
    RFQ
    		SISS46DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12.5A (Ta), 45.3A (Tc) 7.5V, 10V 12.8mOhm @ 10A, 10V 3.4V @ 250µA 42 nC @ 10 V ±20V 2140 pF @ 50 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    SIJ494DP-T1-GE3

    SIJ494DP-T1-GE3

    MOSFET N-CH 150V 36.8A PPAK SO-8

    Vishay Siliconix

    		 5,350 -
    RFQ
    		SIJ494DP-T1-GE3

    Datenblatt

         		ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 36.8A (Tc) 7.5V, 10V 23.2mOhm @ 15A, 10V 4.5V @ 250µA 31 nC @ 10 V ±20V 1070 pF @ 75 V - 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFR420ATRPBF

    IRFR420ATRPBF

    MOSFET N-CH 500V 3.3A DPAK

    Vishay Siliconix

    		 4,787 -
    RFQ
    		IRFR420ATRPBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SI4062DY-T1-GE3

    SI4062DY-T1-GE3

    MOSFET N-CH 60V 32.1A 8SO

    Vishay Siliconix

    		 3,980 -
    RFQ
    		SI4062DY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32.1A (Tc) 4.5V, 10V 4.2mOhm @ 20A, 10V 2.6V @ 250µA 60 nC @ 10 V ±20V 3175 pF @ 30 V - 7.8W (Tc) - - - Surface Mount 8-SOIC
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