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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    XP3NA2R4MT

    XP3NA2R4MT

    FET N-CH 30V 36.5A 118A PMPAK

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP3NA2R4MT

    Datenblatt

         		XP3NA2R4 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 36.5A (Ta), 118A (Tc) 4.5V, 10V 2.4mOhm @ 20A, 10V 3V @ 250µA 65.6 nC @ 4.5 V ±20V 5600 pF @ 15 V - 5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
    IPP020N03LF2SAKSA1

    IPP020N03LF2SAKSA1

    TRENCH <= 40V

    Infineon Technologies

    		 897 -
    RFQ
    		IPP020N03LF2SAKSA1

    Datenblatt

         		StrongIRFET™2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 33A (Ta), 125A (Tc) 4.5V, 10V 2.05mOhm @ 70A, 10V 2.35V @ 80µA 104 nC @ 10 V ±20V 4700 pF @ 15 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-U05
    TSM150NB04LCR RLG

    TSM150NB04LCR RLG

    MOSFET N-CH 40V 10A/41A 8PDFN

    Taiwan Semiconductor Corporation

    		 590 -
    RFQ
    		TSM150NB04LCR RLG

    Datenblatt

         		- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta), 41A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 966 pF @ 20 V - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5.2x5.75)
    SISH107DN-T1-GE3

    SISH107DN-T1-GE3

    P-CHANNEL 30 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 11,770 -
    RFQ
    		SISH107DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12.6A (Ta), 34.4A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1400 pF @ 15 V - 3.57W (Ta), 26.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
    SISH114ADN-T1-GE3

    SISH114ADN-T1-GE3

    MOSFET N-CH 30V 18A/35A PPAK

    Vishay Siliconix

    		 5,982 -
    RFQ
    		SISH114ADN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 35A (Tc) 4.5V, 10V 7.5mOhm @ 18A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1230 pF @ 15 V - 3.7W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
    DI008N09SQ

    DI008N09SQ

    MOSFET SO8 90V 8A 0.075OHM 150C

    Diotec Semiconductor

    		 4,000 -
    RFQ
    		DI008N09SQ

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel - - 8A - - - - - - - 2W - - - Surface Mount 8-SO
    NVLJS053N12MCLTAG

    NVLJS053N12MCLTAG

    PTNG 120V LL NCH IN UDFN 2.0X2.0

    onsemi

    		 2,217 -
    RFQ
    		NVLJS053N12MCLTAG

    Datenblatt

         		SuperFET® III, FRFET® 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 4.8A (Ta) 4.5V, 10V 53mOhm @ 5.2A, 10V 3V @ 30µA 7.8 nC @ 10 V ±20V 520 pF @ 60 V - 620mW (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 6-UDFN (2x2)
    2SK2103T100

    2SK2103T100

    MOSFET N-CH 30V 2A MPT3

    Rohm Semiconductor

    		 1,746 -
    RFQ
    		2SK2103T100

    Datenblatt

         		- TO-243AA Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 400mOhm @ 1A, 10V 2.5V @ 1mA - ±20V 230 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount MPT3
    NTMFS016N06CT1G

    NTMFS016N06CT1G

    MOSFET N-CH 60V 10A/33A 5DFN

    onsemi

    		 1,390 -
    RFQ
    		NTMFS016N06CT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta), 33A (Tc) 10V 15.6mOhm @ 5A, 10V 4V @ 25µA 6.9 nC @ 10 V ±20V 489 pF @ 30 V - 3.4W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    BUK7Y43-60EX

    BUK7Y43-60EX

    MOSFET N-CH 60V 22A LFPAK56

    Nexperia USA Inc.

    		 986 -
    RFQ
    		BUK7Y43-60EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Tc) 10V 43mOhm @ 5A, 10V 4V @ 1mA 10.4 nC @ 10 V ±20V 617 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    DMT10H025LK3-13

    DMT10H025LK3-13

    MOSFET N-CH 100V 47.2A TO252 T&R

    Diodes Incorporated

    		 2,345 -
    RFQ
    		DMT10H025LK3-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 47.2A (Tc) 4.5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1477 pF @ 50 V - 2.6W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252 (DPAK)
    ZVN3310ASTZ

    ZVN3310ASTZ

    MOSFET N-CH 100V 200MA E-LINE

    Diodes Incorporated

    		 1,950 -
    RFQ
    		ZVN3310ASTZ

    Datenblatt

         		- E-Line-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 200mA (Ta) 10V 10Ohm @ 500mA, 10V 2.4V @ 1mA - ±20V 40 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole E-Line (TO-92 compatible)
    NTMFS6H858NLT1G

    NTMFS6H858NLT1G

    T8 80V LL SO8FL

    onsemi

    		 855 -
    RFQ
    		NTMFS6H858NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 8.7A (Ta), 30A (Tc) 4.5V, 10V 19.5mOhm @ 5A, 10V 2V @ 30µA 6 nC @ 4.5 V ±20V 623 pF @ 40 V - 3.5W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SIS415DNT-T1-GE3

    SIS415DNT-T1-GE3

    MOSFET P-CH 20V 35A PPAK1212-8

    Vishay Siliconix

    		 5,650 -
    RFQ
    		SIS415DNT-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 10V 4mOhm @ 20A, 10V 1.5V @ 250µA 180 nC @ 10 V ±12V 5460 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    PJQ4548VP-AU_R2_002A1

    PJQ4548VP-AU_R2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4548VP-AU_R2_002A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 11.6A (Ta), 40A (Tc) 7V, 10V 10.4mOhm @ 10A, 10V 3.5V @ 50µA 9.5 nC @ 10 V ±20V 673 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    TQM250NB06CV RGG

    TQM250NB06CV RGG

    MOSFET

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ
    		TQM250NB06CV RGG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Tc) 7V, 10V 25mOhm @ 13A, 10V 3.8V @ 250µA 19 nC @ 10 V ±20V 1221 pF @ 30 V - 2.4W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-PDFN (3.15x3.1)
    TQM100NB04CV RGG

    TQM100NB04CV RGG

    MOSFET

    Taiwan Semiconductor Corporation

    		 5,000 -
    RFQ

    -

    		 - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Tc) 7V, 10V 10mOhm @ 23.5A, 10V 3.8V @ 250µA 22 nC @ 10 V ±20V 1319 pF @ 20 V - 2.4W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-PDFN (3.15x3.1)
    PJQ4524P_R2_00201

    PJQ4524P_R2_00201

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4524P_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ4530P-AU_R2_002A1

    PJQ4530P-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4530P-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TPCC8105,L1Q

    TPCC8105,L1Q

    PB-F POWER MOSFET TRANSISTOR TSO

    Toshiba Semiconductor and Storage

    		 3,023 -
    RFQ
    		TPCC8105,L1Q

    Datenblatt

         		U-MOSVI 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 23A (Ta) 4.5V, 10V 7.8mOhm @ 11.5A, 10V 2V @ 500µA 76 nC @ 10 V +20V, -25V 3240 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C - - Surface Mount 8-TSON Advance (3.3x3.3)
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