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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPD60R2K0C6ATMA1

    IPD60R2K0C6ATMA1

    MOSFET N-CH 600V 2.4A TO252-3

    Infineon Technologies

    		 2,500 -
    RFQ
    		IPD60R2K0C6ATMA1

    Datenblatt

         		CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPD30N10S3L34ATMA2

    IPD30N10S3L34ATMA2

    MOSFET_(75V 120V(

    Infineon Technologies

    		 2,499 -
    RFQ
    		IPD30N10S3L34ATMA2

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Tc) 4.5V, 10V 31mOhm @ 30A, 10V 2.4V @ 29µA 31 nC @ 10 V ±20V 1976 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    XP3P7R0EM

    XP3P7R0EM

    MOSFET P-CH 30V 15.5A 8SO

    YAGEO XSEMI

    		 988 -
    RFQ
    		XP3P7R0EM

    Datenblatt

         		XP3P7R0E 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 15.5A (Ta) 4.5V, 10V 7mOhm @ 17A, 10V 2V @ 250µA 52.8 nC @ 4.5 V ±25V 6880 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SISS4410DN-T1-GE3

    SISS4410DN-T1-GE3

    N-CHANNEL 40 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,980 -
    RFQ
    		SISS4410DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 36A (Tc) 7.5V, 10V 9mOhm @ 10A, 10V 2.4V @ 250µA 18 nC @ 10 V +20V, -16V 850 pF @ 20 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    PJQ4435EP-AU_R2_002A1

    PJQ4435EP-AU_R2_002A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4435EP-AU_R2_002A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 11.2A (Ta), 45A (Tc) 4.5V, 10V 12.5mOhm @ 10A, 10V 2.5V @ 250µA 34 nC @ 10 V ±25V 1610 pF @ 25 V - 2.5W (Ta), 41W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    AONR66924

    AONR66924

    N

    Alpha & Omega Semiconductor Inc.

    		 4,692 -
    RFQ
    		AONR66924

    Datenblatt

         		AlphaSGT™ 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 32A (Tc) 4.5V, 10V 13.5mOhm @ 20A, 10V 2.6V @ 250µA 40 nC @ 10 V ±20V 1450 pF @ 50 V - 5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (3x3)
    TSM1NB60LCW RPG

    TSM1NB60LCW RPG

    600V, 0.55A, SINGLE N-CHANNEL PO

    Taiwan Semiconductor Corporation

    		 3,760 -
    RFQ
    		TSM1NB60LCW RPG

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 230mA (Ta), 550mA (Tc) 10V 15Ohm @ 270mA, 10V 2V @ 250µA 7.5 nC @ 10 V ±30V 98 pF @ 300 V - 10.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    PJQ5439E-AU_R2_006A1

    PJQ5439E-AU_R2_006A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,970 -
    RFQ
    		PJQ5439E-AU_R2_006A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta), 33A (Tc) 4.5V, 10V 18.8mOhm @ 20A, 10V 2.5V @ 250µA 22 nC @ 10 V ±25V 1012 pF @ 25 V - 3.3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
    XP3P010M

    XP3P010M

    MOSFET P-CH 30V 13.3A 8SO

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP3P010M

    Datenblatt

         		XP3P010 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V, 10V 10mOhm @ 12A, 10V 3V @ 250µA 54.4 nC @ 4.5 V ±20V 6080 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    XP10P500N

    XP10P500N

    MOSFET P-CH 100V 1.2A SOT23

    YAGEO XSEMI

    		 897 -
    RFQ
    		XP10P500N

    Datenblatt

         		XP10P500 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 1.2A (Ta) 4.5V, 10V 500mOhm @ 1A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 670 pF @ 50 V - 1.38W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    MCU12P10-TP

    MCU12P10-TP

    MOSFET P-CH 100V 12A DPAK

    Micro Commercial Co

    		 24,970 -
    RFQ
    		MCU12P10-TP

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 200mOhm @ 8A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1055 pF @ 25 V - 40W -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    PJD45P04_L2_00001

    PJD45P04_L2_00001

    40V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,075 -
    RFQ
    		PJD45P04_L2_00001

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.5A (Ta), 45A (Tc) 4.5V, 10V 17mOhm @ 15A, 10V 2.5V @ 250µA 19 nC @ 4.5 V ±20V 2030 pF @ 25 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    RQ1E050RPHZGTR

    RQ1E050RPHZGTR

    PCH -30V -5A SMALL SIGNAL MOSFET

    Rohm Semiconductor

    		 3,000 -
    RFQ
    		RQ1E050RPHZGTR

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4V, 10V 31mOhm @ 5A, 10V 2.5V @ 1mA 13 nC @ 4 V ±20V 1300 pF @ 10 V - 1.1W (Ta) -55°C ~ 150°C - - Surface Mount TSMT8
    ZVN4210ASTZ

    ZVN4210ASTZ

    MOSFET N-CH 100V 450MA E-LINE

    Diodes Incorporated

    		 2,000 -
    RFQ
    		ZVN4210ASTZ

    Datenblatt

         		- E-Line-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 450mA (Ta) 5V, 10V 1.5Ohm @ 1.5A, 10V 2.4V @ 1mA - ±20V 100 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole E-Line (TO-92 compatible)
    DMP26M1UFG-7

    DMP26M1UFG-7

    MOSFET BVDSS: 8V~24V POWERDI3333

    Diodes Incorporated

    		 1,970 -
    RFQ
    		DMP26M1UFG-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 71A (Tc) 1.5V, 4.5V 5.5mOhm @ 15A, 4.5V 1V @ 250µA 164 nC @ 10 V ±10V 5392 pF @ 10 V - 1.67W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
    IAUZ40N06S5N105ATMA1

    IAUZ40N06S5N105ATMA1

    MOSFET_)40V 60V) PG-TSDSON-8

    Infineon Technologies

    		 5,003 -
    RFQ
    		IAUZ40N06S5N105ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tj) 7V, 10V 10.5mOhm @ 20A, 10V 3.4V @ 13µA 16.3 nC @ 10 V ±20V 1099 pF @ 30 V - 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TSDSON-8-32
    PJQ4433EP_R2_00201

    PJQ4433EP_R2_00201

    30V P-CHANNEL STANDARD TRENCH MO

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4433EP_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ4524P-AU_R2_002A1

    PJQ4524P-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4524P-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    DMTH4008LPSQ-13

    DMTH4008LPSQ-13

    MOSFET N-CH 40V PWRDI5060

    Diodes Incorporated

    		 4,835 -
    RFQ
    		DMTH4008LPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14.4A (Ta), 64.8A (Tc) 5V, 10V 8.8mOhm @ 10A, 10V 3V @ 250µA 15.3 nC @ 10 V ±20V 1088 pF @ 20 V - 2.99W (Ta), 55.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
    PJQ5437E_R2_00201

    PJQ5437E_R2_00201

    30V P-CHANNEL STANDARD TRENCH MO

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5437E_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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