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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    DMN6017SFV-7

    DMN6017SFV-7

    MOSFET N-CH 60V 35A POWERDI3333

    Diodes Incorporated

    		 1,882 -
    RFQ
    		DMN6017SFV-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 18mOhm @ 6A, 10V 3V @ 250µA 55 nC @ 10 V ±20V 2711 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type UX)
    DMTH6012LPSWQ-13

    DMTH6012LPSWQ-13

    MOSFET N-CH 60V 11.5/50.5A PWRDI

    Diodes Incorporated

    		 1,795 -
    RFQ
    		DMTH6012LPSWQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 11.5A (Ta), 50.5A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V 2.3V @ 250µA 13.6 nC @ 10 V ±20V 785 pF @ 30 V - 2.8W (Ta), 53.6W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type Q)
    DMN6069SFGQ-7

    DMN6069SFGQ-7

    MOSFET N-CH 60V 18A POWERDI3333

    Diodes Incorporated

    		 5,535 -
    RFQ
    		DMN6069SFGQ-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 50mOhm @ 4.5A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1480 pF @ 30 V - 2.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8
    SIAA00DJ-T1-GE3

    SIAA00DJ-T1-GE3

    MOSFET N-CH 25V 20.1A/40A PPAK

    Vishay Siliconix

    		 4,670 -
    RFQ
    		SIAA00DJ-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 20.1A (Ta), 40A (Tc) 4.5V, 10V 5.6mOhm @ 15A, 10V 2.5V @ 250µA 24 nC @ 10 V +16V, -12V 1090 pF @ 12.5 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
    IRF8721TRPBFXTMA1

    IRF8721TRPBFXTMA1

    TRENCH <= 40V

    Infineon Technologies

    		 4,000 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    ISP13DP06NMSATMA1

    ISP13DP06NMSATMA1

    MOSFET P-CH 60V SOT223

    Infineon Technologies

    		 3,000 -
    RFQ
    		ISP13DP06NMSATMA1

    Datenblatt

         		OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Ta) - - - - ±20V - - - - - - Surface Mount PG-SOT223
    RQ1C075UNTR

    RQ1C075UNTR

    MOSFET N-CH 20V 7.5A TSMT8

    Rohm Semiconductor

    		 2,960 -
    RFQ
    		RQ1C075UNTR

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.5V, 4.5V 16mOhm @ 7.5A, 4.5V 1V @ 1mA 18 nC @ 4.5 V ±10V 1400 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount TSMT8
    DMN6069SFGQ-13

    DMN6069SFGQ-13

    MOSFET N-CH 60V 18A POWERDI3333

    Diodes Incorporated

    		 2,945 -
    RFQ
    		DMN6069SFGQ-13

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 50mOhm @ 4.5A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1480 pF @ 30 V - 2.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8
    DMTH10H032SPSWQ-13

    DMTH10H032SPSWQ-13

    MOSFET BVDSS: 61V~100V PowerDI50

    Diodes Incorporated

    		 2,488 -
    RFQ
    		DMTH10H032SPSWQ-13

    Datenblatt

         		- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 32mOhm @ 5A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 544 pF @ 50 V - 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
    DMTH47M2LPSWQ-13

    DMTH47M2LPSWQ-13

    MOSFET BVDSS: 31V~40V POWERDI506

    Diodes Incorporated

    		 2,216 -
    RFQ
    		DMTH47M2LPSWQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 73A (Tc) 4.5V, 10V 7.3mOhm @ 20A, 10V 2.3V @ 250µA 14 nC @ 10 V ±20V 891 pF @ 20 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
    IAUCN04S7L011ATMA1

    IAUCN04S7L011ATMA1

    MOSFET_(20V 40V)

    Infineon Technologies

    		 915 -
    RFQ
    		IAUCN04S7L011ATMA1

    Datenblatt

         		OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 222A (Tj) 4.5V, 10V 1.13mOhm @ 60A, 10V 1.8V @ 45µA 64 nC @ 10 V ±16V 4240 pF @ 20 V - 105W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
    PJD80N04_L2_00001

    PJD80N04_L2_00001

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 507 -
    RFQ
    		PJD80N04_L2_00001

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 1258 pF @ 25 V - 2W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    PJQ4534P-AU_R2_002A1

    PJQ4534P-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4534P-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ2566A_R1_00201

    PJQ2566A_R1_00201

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ2566A_R1_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TP89R103NL,LQ

    TP89R103NL,LQ

    MOSFET N CH 30V 15A 8SOP

    Toshiba Semiconductor and Storage

    		 2,200 -
    RFQ
    		TP89R103NL,LQ

    Datenblatt

         		U-MOSVIII-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 9.1mOhm @ 7.5A, 10V 2.3V @ 100µA 9.8 nC @ 10 V ±20V 820 pF @ 15 V - 1W (Tc) 150°C (TJ) - - Surface Mount 8-SOP
    DIT090N06

    DIT090N06

    MOSFET TO220AB N 65V 0.0057OHM

    Diotec Semiconductor

    		 994 -
    RFQ
    		DIT090N06

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 65 V 90A (Tc) 10V 7mOhm @ 30A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 3400 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    DI050N06D1

    DI050N06D1

    MOSFET, DPAK, 60V, 50A, 0, 42W

    Diotec Semiconductor

    		 898 -
    RFQ

    -

    		 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65 V 50A (Tc) 4.5V, 10V 11mOhm @ 10A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 825 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    TSM038N03PQ33 RGG

    TSM038N03PQ33 RGG

    MOSFET N-CH 30V 78A 8PDFN

    Taiwan Semiconductor Corporation

    		 18,312 -
    RFQ
    		TSM038N03PQ33 RGG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 2557 pF @ 15 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (3.1x3.1)
    PJQ5443_R2_00001

    PJQ5443_R2_00001

    40V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 7,975 -
    RFQ
    		PJQ5443_R2_00001

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060-8
    DMP4025LK3-13

    DMP4025LK3-13

    MOSFET P-CH 40V 6.7A TO252

    Diodes Incorporated

    		 4,900 -
    RFQ
    		DMP4025LK3-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 6.7A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V 1.8V @ 250µA 33.7 nC @ 10 V ±20V 1643 pF @ 20 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252-3
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