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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RQ1C075UNTR

    RQ1C075UNTR

    MOSFET N-CH 20V 7.5A TSMT8

    Rohm Semiconductor

    		 2,960 -
    RFQ
    		RQ1C075UNTR Datenblatt - 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.5V, 4.5V 16mOhm @ 7.5A, 4.5V 1V @ 1mA 18 nC @ 4.5 V ±10V 1400 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount TSMT8
    DMTH10H032SPSWQ-13

    DMTH10H032SPSWQ-13

    MOSFET BVDSS: 61V~100V PowerDI50

    Diodes Incorporated

    		 2,488 -
    RFQ
    		DMTH10H032SPSWQ-13 Datenblatt - 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 32mOhm @ 5A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 544 pF @ 50 V - 3.2W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
    DMTH47M2LPSWQ-13

    DMTH47M2LPSWQ-13

    MOSFET BVDSS: 31V~40V POWERDI506

    Diodes Incorporated

    		 2,216 -
    RFQ
    		DMTH47M2LPSWQ-13 Datenblatt - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 73A (Tc) 4.5V, 10V 7.3mOhm @ 20A, 10V 2.3V @ 250µA 14 nC @ 10 V ±20V 891 pF @ 20 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
    IAUCN04S7L011ATMA1

    IAUCN04S7L011ATMA1

    MOSFET_(20V 40V)

    Infineon Technologies

    		 915 -
    RFQ
    		IAUCN04S7L011ATMA1 Datenblatt OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 222A (Tj) 4.5V, 10V 1.13mOhm @ 60A, 10V 1.8V @ 45µA 64 nC @ 10 V ±16V 4240 pF @ 20 V - 105W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
    PJD80N04_L2_00001

    PJD80N04_L2_00001

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 507 -
    RFQ
    		PJD80N04_L2_00001 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 1258 pF @ 25 V - 2W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    PJQ4534P-AU_R2_002A1

    PJQ4534P-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4534P-AU_R2_002A1 Datenblatt - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ2566A_R1_00201

    PJQ2566A_R1_00201

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ2566A_R1_00201 Datenblatt - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TP89R103NL,LQ

    TP89R103NL,LQ

    MOSFET N CH 30V 15A 8SOP

    Toshiba Semiconductor and Storage

    		 2,200 -
    RFQ
    		TP89R103NL,LQ Datenblatt U-MOSVIII-H 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 9.1mOhm @ 7.5A, 10V 2.3V @ 100µA 9.8 nC @ 10 V ±20V 820 pF @ 15 V - 1W (Tc) 150°C (TJ) - - Surface Mount 8-SOP
    DIT090N06

    DIT090N06

    MOSFET TO220AB N 65V 0.0057OHM

    Diotec Semiconductor

    		 994 -
    RFQ
    		DIT090N06 Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 65 V 90A (Tc) 10V 7mOhm @ 30A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 3400 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    DI050N06D1

    DI050N06D1

    MOSFET, DPAK, 60V, 50A, 0, 42W

    Diotec Semiconductor

    		 898 -
    RFQ
    		DI050N06D1 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65 V 50A (Tc) 4.5V, 10V 11mOhm @ 10A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 825 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    TSM038N03PQ33 RGG

    TSM038N03PQ33 RGG

    MOSFET N-CH 30V 78A 8PDFN

    Taiwan Semiconductor Corporation

    		 18,312 -
    RFQ
    		TSM038N03PQ33 RGG Datenblatt - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 2557 pF @ 15 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (3.1x3.1)
    PJQ5443_R2_00001

    PJQ5443_R2_00001

    40V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 7,975 -
    RFQ
    		PJQ5443_R2_00001 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060-8
    DMP4025LK3-13

    DMP4025LK3-13

    MOSFET P-CH 40V 6.7A TO252

    Diodes Incorporated

    		 4,900 -
    RFQ
    		DMP4025LK3-13 Datenblatt - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 6.7A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V 1.8V @ 250µA 33.7 nC @ 10 V ±20V 1643 pF @ 20 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252-3
    PJQ4401P-AU_R2_000A1

    PJQ4401P-AU_R2_000A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 4,387 -
    RFQ
    		PJQ4401P-AU_R2_000A1 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 50A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 3228 pF @ 15 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    QS5U33TR

    QS5U33TR

    MOSFET P-CH 30V 2A TSMT5

    Rohm Semiconductor

    		 2,833 -
    RFQ
    		QS5U33TR Datenblatt - SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4V, 10V 135mOhm @ 2A, 10V 2.5V @ 1mA 3.4 nC @ 5 V ±20V 310 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) 150°C (TJ) - - Surface Mount TSMT5
    ZXMN3A14FQTA

    ZXMN3A14FQTA

    MOSFET N-CH 30V 3.9A SOT23-3

    Diodes Incorporated

    		 2,705 -
    RFQ
    		ZXMN3A14FQTA Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.9A (Ta) 4.5V, 10V 65mOhm @ 3.2A, 10V 2.2V @ 250µA 8.6 nC @ 10 V ±20V 448 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3
    NTTFS008N04CTAG

    NTTFS008N04CTAG

    MOSFET N-CH 40V 14A/48A 8WDFN

    onsemi

    		 1,500 -
    RFQ
    		NTTFS008N04CTAG Datenblatt - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 48A (Tc) 10V 8.5mOhm @ 15A, 10V 3.5V @ 30µA 10 nC @ 10 V ±20V 625 pF @ 25 V - 3.1W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    PSMN4R1-30YLC,115

    PSMN4R1-30YLC,115

    MOSFET N-CH 30V 92A LFPAK56

    Nexperia USA Inc.

    		 1,250 -
    RFQ
    		PSMN4R1-30YLC,115 Datenblatt - SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 92A (Tc) 4.5V, 10V 4.35mOhm @ 20A, 10V 1.95V @ 1mA 23 nC @ 10 V ±20V 1502 pF @ 15 V - 67W (Tc) - - - Surface Mount LFPAK56, Power-SO8
    DMT69M5LH3

    DMT69M5LH3

    MOSFET BVDSS: 41V~60V TO251 TUBE

    Diodes Incorporated

    		 552 -
    RFQ
    		DMT69M5LH3 Datenblatt - TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 10.5mOhm @ 20A, 10V 2.5V @ 250µA 28.4 nC @ 10 V ±20V 1406 pF @ 30 V - 3.3W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
    ZXM62P03E6TA

    ZXM62P03E6TA

    MOSFET P-CH 30V 1.5A SOT26

    Diodes Incorporated

    		 13,179 -
    RFQ
    		ZXM62P03E6TA Datenblatt - SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4.5V, 10V 150mOhm @ 1.6A, 10V 1V @ 250µA 10.2 nC @ 10 V ±20V 330 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
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