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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PJQ5526_R2_00201

    PJQ5526_R2_00201

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 2,990 -
    RFQ
    		PJQ5526_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    DMTH47M2LFVWQ-13

    DMTH47M2LFVWQ-13

    MOSFET BVDSS: 31V~40V PowerDI333

    Diodes Incorporated

    		 2,860 -
    RFQ
    		DMTH47M2LFVWQ-13

    Datenblatt

         		- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 13.6A (Ta), 49A (Tc) 4.5V, 10V 8.9mOhm @ 20A, 10V 2.3V @ 250µA 12.3 nC @ 10 V ±20V 881 pF @ 20 V - 2.9W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
    PJA3474S-AU_R1_007A1

    PJA3474S-AU_R1_007A1

    100V N-CHANNEL ENHANCEMENT MODE

    Panjit International Inc.

    		 2,300 -
    RFQ
    		PJA3474S-AU_R1_007A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    BUK7Y113-100EX

    BUK7Y113-100EX

    MOSFET N-CH 100V 12A LFPAK56

    Nexperia USA Inc.

    		 1,400 -
    RFQ
    		BUK7Y113-100EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 113mOhm @ 5A, 10V 4V @ 1mA 10.4 nC @ 10 V ±20V 601 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    XP4064CMT

    XP4064CMT

    MOSFET N-CH 30V 31.5A 78A PMPAK

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP4064CMT

    Datenblatt

         		XP4064C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 31.5A (Ta), 78A (Tc) 4.5V, 10V 3.1mOhm @ 19A, 10V 2.3V @ 250µA 40 nC @ 10 V ±20V 2048 pF @ 25 V - 5W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
    XP3N2R8AMT

    XP3N2R8AMT

    MOSFET N-CH 30V 32.8A 60A PMPAK

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP3N2R8AMT

    Datenblatt

         		XP3N2R8A 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 32.8A (Ta), 60A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V 4080 pF @ 15 V - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
    XP3R303GMT-L

    XP3R303GMT-L

    MOSFET N-CH 30V 31A 105A PMPAK

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP3R303GMT-L

    Datenblatt

         		XP3R303 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 105A (Tc) 4.5V, 10V 3.3mOhm @ 30A, 10V 3V @ 250µA 21 nC @ 4.5 V ±20V 2240 pF @ 25 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
    DMTH69M8LFVWQ-7

    DMTH69M8LFVWQ-7

    MOSFET BVDSS: 41V-60V POWERDI333

    Diodes Incorporated

    		 150 -
    RFQ
    		DMTH69M8LFVWQ-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 15.9A (Ta), 45.4A (Tc) 4.5V, 10V 9.5mOhm @ 13.5A, 10V 3V @ 250µA 33.5 nC @ 10 V ±16V 1925 pF @ 30 V - 3.6W (Ta), 29.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
    SSM6K818R,LF

    SSM6K818R,LF

    N-CH MOSFET 30V, +/-20V, 15A ,0.

    Toshiba Semiconductor and Storage

    		 5,583 -
    RFQ
    		SSM6K818R,LF

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 12mOhm @ 4A, 4.5V 2.1V @ 100µA 7.5 nC @ 4.5 V ±20V 1130 pF @ 15 V - 1.5W (Ta) 150°C Automotive AEC-Q101 Surface Mount 6-TSOP-F
    SSM6K804R,LF

    SSM6K804R,LF

    N-CH MOSFET 40V, +/-20V, 12A ,0.

    Toshiba Semiconductor and Storage

    		 5,180 -
    RFQ
    		SSM6K804R,LF

    Datenblatt

         		- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta) 4.5V, 10V 12mOhm @ 4A, 10V 2.4V @ 100µA 7.5 nC @ 4.5 V ±20V 1110 pF @ 20 V - 1.5W (Ta) 175°C - - Surface Mount 6-TSOP-F
    ISZ056N03LF2SATMA1

    ISZ056N03LF2SATMA1

    ISZ056N03LF2SATMA1

    Infineon Technologies

    		 5,000 -
    RFQ
    		ISZ056N03LF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 72A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 2.35V @ 30µA 11 nC @ 4.5 V ±20V 1012 pF @ 15 V - 3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8 FL
    TSM180P03CS RLG

    TSM180P03CS RLG

    MOSFET P-CHANNEL 30V 10A 8SOP

    Taiwan Semiconductor Corporation

    		 4,168 -
    RFQ
    		TSM180P03CS RLG

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 1730 pF @ 15 V - 2.5W (Tc) 150°C (TJ) - - Surface Mount 8-SOP
    XP152A12C0MR-G

    XP152A12C0MR-G

    MOSFET P-CH 20V 700MA SOT23

    Torex Semiconductor Ltd

    		 3,000 -
    RFQ
    		XP152A12C0MR-G

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 700mA (Ta) 2.5V, 4.5V 300mOhm @ 400mA, 4.5V 1.2V @ 1mA - ±12V 180 pF @ 10 V - 500mW (Ta) 150°C (TA) - - Surface Mount SOT-23
    FDC5661N

    FDC5661N

    FET 60V 50.0 MOHM SSOT6

    onsemi

    		 2,885 -
    RFQ
    		FDC5661N

    Datenblatt

         		PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Ta) 4.5V, 10V 47mOhm @ 4.3A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 763 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-23-6
    DMT3006LFV-13

    DMT3006LFV-13

    MOSFET N-CH 30V 60A POWERDI3333

    Diodes Incorporated

    		 2,875 -
    RFQ
    		DMT3006LFV-13

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 7mOhm @ 9A, 10V 3V @ 250µA 8.4 nC @ 10 V ±20V 1155 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8
    DMT10H072LFDF-7

    DMT10H072LFDF-7

    MOSFET N-CH 100V 4A 6UDFN

    Diodes Incorporated

    		 1,980 -
    RFQ
    		DMT10H072LFDF-7

    Datenblatt

         		- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 4A (Ta) 4.5V, 10V 62mOhm @ 4.5A, 10V 3V @ 250µA 5.1 nC @ 10 V ±20V 266 pF @ 50 V - 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type F)
    DMT3009LFVWQ-7

    DMT3009LFVWQ-7

    MOSFET N-CH 30V 12A PWRDI3333

    Diodes Incorporated

    		 1,270 -
    RFQ
    		DMT3009LFVWQ-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 50A (Tc) 3.8V, 10V 11mOhm @ 14.4A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 823 pF @ 15 V - 2.3W (Ta), 35.7W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
    XP83T03GJB

    XP83T03GJB

    MOSFET N-CH 30V 75A TO251S

    YAGEO XSEMI

    		 970 -
    RFQ
    		XP83T03GJB

    Datenblatt

         		XP83T03 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 6mOhm @ 40A, 10V 3V @ 250µA 34 nC @ 4.5 V ±20V 1840 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-251S
    DMP6110SVTQ-13

    DMP6110SVTQ-13

    MOSFET P-CH 60V 7.3A TSOT26

    Diodes Incorporated

    		 9,958 -
    RFQ
    		DMP6110SVTQ-13

    Datenblatt

         		- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 7.3A (Ta) 4.5V, 10V 105mOhm @ 4.5A, 10V 3V @ 250µA 17.2 nC @ 10 V ±20V 969 pF @ 30 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TSOT-23-6
    MCAC014N10Y-TP

    MCAC014N10Y-TP

    MOSFET N-CH 100 60A DFN5060

    Micro Commercial Co

    		 4,894 -
    RFQ
    		MCAC014N10Y-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 14mOhm @ 25A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1305 pF @ 50 V - 104W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount DFN5060
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