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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TSM60NC980CH C5G

    TSM60NC980CH C5G

    600V, 4A, SINGLE N-CHANNEL POWER

    Taiwan Semiconductor Corporation

    		 13,114 -
    RFQ
    		TSM60NC980CH C5G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 980mOhm @ 1.5A, 10V 5V @ 1mA 11 nC @ 10 V ±20V 330 pF @ 300 V - 57W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    IPD047N03LF2SATMA1

    IPD047N03LF2SATMA1

    MOSFET N-CH 30V 71A TO-252

    Infineon Technologies

    		 2,000 -
    RFQ
    		IPD047N03LF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 4.7mOhm @ 40A, 10V 2.35V @ 30µA 32 nC @ 10 V ±20V 1400 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    DI040P04PT

    DI040P04PT

    MOSFET POWERQFN 3X3 P -40V -40A

    Diotec Semiconductor

    		 4,850 -
    RFQ
    		DI040P04PT

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-QFN (3x3)
    RQ6P020ATTCR

    RQ6P020ATTCR

    PCH -100V -2A POWER MOSFET: RQ6P

    Rohm Semiconductor

    		 4,849 -
    RFQ
    		RQ6P020ATTCR

    Datenblatt

         		- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2A (Ta) 4.5V, 10V 220mOhm @ 2A, 10V 2.5V @ 1mA 24 nC @ 10 V ±20V 760 pF @ 50 V - 950mW (Ta) 150°C (TJ) - - Surface Mount TSMT6 (SC-95)
    IAUZ30N08S5N186ATMA1

    IAUZ30N08S5N186ATMA1

    MOSFET_(75V 120V( PG-TSDSON-8

    Infineon Technologies

    		 4,210 -
    RFQ
    		IAUZ30N08S5N186ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tj) 6V, 10V 18.6mOhm @ 15A, 10V 3.8V @ 13µA 12.1 nC @ 10 V ±20V 759 pF @ 40 V - 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8-32
    PJQ5548-AU_R2_002A1

    PJQ5548-AU_R2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,775 -
    RFQ
    		PJQ5548-AU_R2_002A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14.5A (Ta), 48A (Tc) 4.5V, 10V 8.8mOhm @ 20A, 10V 2.3V @ 50µA 13 nC @ 10 V ±20V 778 pF @ 25 V - 3.3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
    TK4P60D,RQ

    TK4P60D,RQ

    PB-F POWER MOSFET TRANSISTOR DP(

    Toshiba Semiconductor and Storage

    		 920 -
    RFQ
    		TK4P60D,RQ

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 100W (Tc) 150°C - - Surface Mount DPAK
    ZVN4424GQTA

    ZVN4424GQTA

    MOSFET N-CH 240V SOT223 T&R

    Diodes Incorporated

    		 856 -
    RFQ
    		ZVN4424GQTA

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240 V 500mA (Ta) 2.5V, 10V 5.5Ohm @ 500mA, 10V 1.8V @ 1mA - ±40V 200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223
    DMT32M5LPS-13

    DMT32M5LPS-13

    MOSFET N-CH 30V 150A PWRDI5060-8

    Diodes Incorporated

    		 12,103 -
    RFQ
    		DMT32M5LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 3V @ 1mA 68 nC @ 10 V ±20V 3944 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8
    SIA108DJ-T1-GE3

    SIA108DJ-T1-GE3

    MOSFET N-CH 80V 6.6A/12A PPAK

    Vishay Siliconix

    		 4,674 -
    RFQ
    		SIA108DJ-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 6.6A (Ta), 12A (Tc) 7.5V, 10V 38mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 545 pF @ 40 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
    SIHFR320-GE3

    SIHFR320-GE3

    MOSFET N-CH 400V 3.1A DPAK

    Vishay Siliconix

    		 1,902 -
    RFQ
    		SIHFR320-GE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    IPP050N03LF2SAKSA1

    IPP050N03LF2SAKSA1

    MOSFET N-CH 30V 50A TO220-3

    Infineon Technologies

    		 968 -
    RFQ
    		IPP050N03LF2SAKSA1

    Datenblatt

         		StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 53A (Tc) 4.5V, 10V 4.95mOhm @ 30A, 10V 2.35V @ 30µA 32 nC @ 10 V ±20V 1400 pF @ 15 V - 3.8W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-U05
    SIHFR9024TR-GE3

    SIHFR9024TR-GE3

    MOSFET P-CH 60V 8.8A DPAK

    Vishay Siliconix

    		 774 -
    RFQ
    		SIHFR9024TR-GE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    DMPH4025SFVWQ-13

    DMPH4025SFVWQ-13

    MOSFET P-CH 40V PWRDI3333

    Diodes Incorporated

    		 990 -
    RFQ
    		DMPH4025SFVWQ-13

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.7A (Ta), 40A (Tc) 4.5V, 10V 25mOhm @ 30A, 10V 1.8V @ 250µA 38.6 nC @ 10 V ±20V 1918 pF @ 20 V - 2.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
    FDMA410NZT-F130

    FDMA410NZT-F130

    PT4 NCH 20/8V ZENER IN

    onsemi

    		 12,000 -
    RFQ
    		FDMA410NZT-F130

    Datenblatt

         		- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) 1.5V, 4.5V 23mOhm @ 9.5A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1310 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (2.05x2.05)
    MCU60N06-TP

    MCU60N06-TP

    N-CHANNEL MOSFET,DPAK

    Micro Commercial Co

    		 5,000 -
    RFQ
    		MCU60N06-TP

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 11mOhm @ 20A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2220 pF @ 30 V - 83W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    PJQ4528P-AU_R2_002A1

    PJQ4528P-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4528P-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ5548V-AU_R2_002A1

    PJQ5548V-AU_R2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5548V-AU_R2_002A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 13.6A (Ta), 45A (Tc) 7V, 10V 10mOhm @ 20A, 10V 3.5V @ 50µA 9.5 nC @ 10 V ±20V 673 pF @ 25 V - 3.3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
    PJQ5534-AU_R2_002A1

    PJQ5534-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5534-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ5437E-AU_R2_006A1

    PJQ5437E-AU_R2_006A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,970 -
    RFQ
    		PJQ5437E-AU_R2_006A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 11.8A (Ta), 42A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V ±25V 1270 pF @ 25 V - 3.3W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
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