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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    XP4459M

    XP4459M

    MOSFET P-CH 30V 11.3A 8SO

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP4459M

    Datenblatt

         		XP4459 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 3360 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    TPH8R808QM,LQ

    TPH8R808QM,LQ

    80V UMOS9-H SOP-ADVANCE(N) 8.8MO

    Toshiba Semiconductor and Storage

    		 9,829 -
    RFQ

    -

    		 U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 79A (Ta), 52A (Tc) 6V, 10V 8.8mOhm @ 26A, 10V 3.5V @ 300µA 26 nC @ 10 V ±20V 1750 pF @ 40 V - 3W (Ta), 109W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
    DMPH3010LK3-13

    DMPH3010LK3-13

    MOSFET P-CHANNEL 30V 50A TO252

    Diodes Incorporated

    		 1,039 -
    RFQ
    		DMPH3010LK3-13

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.1V @ 250µA 139 nC @ 10 V ±20V 6807 pF @ 15 V - 3.9W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    NVMFWS040N10MCLT1G

    NVMFWS040N10MCLT1G

    PTNG 100V LL SO8FL

    onsemi

    		 680 -
    RFQ
    		NVMFWS040N10MCLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 21A (Tc) 4.5V, 10V 38mOhm @ 5A, 10V 3V @ 26µA 8.3 nC @ 10 V ±20V 500 pF @ 50 V - 3.5W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    SQJ860EP-T1_GE3

    SQJ860EP-T1_GE3

    MOSFET N-CH 40V 60A PPAK SO-8

    Vishay Siliconix

    		 14,730 -
    RFQ
    		SQJ860EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    PJQ4568AP-AU_R2_002A1

    PJQ4568AP-AU_R2_002A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 5,000 -
    RFQ
    		PJQ4568AP-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IAUC26N10S5L245ATMA1

    IAUC26N10S5L245ATMA1

    MOSFET_(75V 120V( PG-TDSON-8

    Infineon Technologies

    		 4,728 -
    RFQ
    		IAUC26N10S5L245ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tj) 4.5V, 10V 24.5mOhm @ 13A, 10V 2.2V @ 13µA 12 nC @ 10 V ±20V 762 pF @ 50 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-33
    DMT47M2SFVWQ-13

    DMT47M2SFVWQ-13

    MOSFET N-CH 40V PWRDI3333

    Diodes Incorporated

    		 3,000 -
    RFQ
    		DMT47M2SFVWQ-13

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15.4A (Ta), 49.1A (Tc) 10V 7.5mOhm @ 20A, 10V 4V @ 250µA 12.1 nC @ 10 V ±20V 897 pF @ 20 V - 2.67W (Ta), 27.1W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
    PJQ5530-AU_R2_002A1

    PJQ5530-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5530-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ5435E_R2_00201

    PJQ5435E_R2_00201

    30V P-CHANNEL STANDARD TRENCH MO

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5435E_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SQJA88EP-T1_GE3

    SQJA88EP-T1_GE3

    MOSFET N-CH 40V 30A PPAK SO-8

    Vishay Siliconix

    		 2,936 -
    RFQ
    		SQJA88EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 7mOhm @ 8A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    DMT15H067SSS-13

    DMT15H067SSS-13

    MOSFET N-CH 150V 4.5A/13A 8SO

    Diodes Incorporated

    		 1,885 -
    RFQ
    		DMT15H067SSS-13

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta), 13A (Tc) 10V 67mOhm @ 4.1A, 10V 4V @ 250µA 6.4 nC @ 10 V ±20V 425 pF @ 75 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SI4420BDY-T1-GE3

    SI4420BDY-T1-GE3

    MOSFET N-CH 30V 9.5A 8SO

    Vishay Siliconix

    		 1,757 -
    RFQ
    		SI4420BDY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 3V @ 250µA 50 nC @ 10 V ±20V - - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDMC7678-L701

    FDMC7678-L701

    PT8 N 30/20V MLP3.3X3.3

    onsemi

    		 5,128 -
    RFQ
    		FDMC7678-L701

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17.5A (Ta), 19.5A (Tc) 4.5V, 10V 5.3mOhm @ 17.5A, 10V 3V @ 250µA 39 nC @ 10 V ±20V 2410 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    TSM052NB03CR RLG

    TSM052NB03CR RLG

    MOSFET N-CH 30V 17A/90A 8PDFN

    Taiwan Semiconductor Corporation

    		 4,949 -
    RFQ
    		TSM052NB03CR RLG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 90A (Tc) 4.5V, 10V 5.2mOhm @ 17A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2294 pF @ 15 V - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5x6)
    ISK036N03LM5AUSA1

    ISK036N03LM5AUSA1

    TRENCH <= 40V

    Infineon Technologies

    		 2,585 -
    RFQ
    		ISK036N03LM5AUSA1

    Datenblatt

         		OptiMOS™ 5 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16.5A (Ta), 81A (Tc) 4.5V, 10V 3.6mOhm @ 20A, 10V 2V @ 250µA 21.5 nC @ 10 V ±16V 1400 pF @ 15 V - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
    IAUCN04S7L009ATMA1

    IAUCN04S7L009ATMA1

    MOSFET_(20V 40V)

    Infineon Technologies

    		 828 -
    RFQ
    		IAUCN04S7L009ATMA1

    Datenblatt

         		OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 275A (Tj) 4.5V, 10V 0.91mOhm @ 88A, 10V 1.8V @ 60µA 85 nC @ 10 V ±16V 5704 pF @ 20 V - 129W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
    PJQ4443P-AU_R2_000A1

    PJQ4443P-AU_R2_000A1

    40V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 759 -
    RFQ
    		PJQ4443P-AU_R2_000A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.8A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2.1W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    ZXMN6A08GQTA

    ZXMN6A08GQTA

    MOSFET N-CH 60V 3.8A SOT223

    Diodes Incorporated

    		 261 -
    RFQ
    		ZXMN6A08GQTA

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3.8A (Ta) 4.5V, 10V 80mOhm @ 4.8A, 10V 1V @ 250µA 5.8 nC @ 10 V ±20V 459 pF @ 40 V - 2W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223-3
    IAUCN04S7N009ATMA1

    IAUCN04S7N009ATMA1

    MOSFET_(20V 40V)

    Infineon Technologies

    		 236 -
    RFQ
    		IAUCN04S7N009ATMA1

    Datenblatt

         		OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 175A 10V - - - - - - - -55°C ~ 175°C Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
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