FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
SPI20N60CFDHKSA1

SPI20N60CFDHKSA1

MOSFET N-CH 650V 20.7A TO262-3

Infineon Technologies

3,020 -
RFQ
SPI20N60CFDHKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
SPP07N60CFDHKSA1

SPP07N60CFDHKSA1

MOSFET N-CH 650V 6.6A TO220-3

Infineon Technologies

9,548 -
RFQ
SPP07N60CFDHKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.6A (Tc) 10V 700mOhm @ 4.6A, 10V 5V @ 300µA 47 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP08P06PHXKSA1

SPP08P06PHXKSA1

MOSFET P-CH 60V 8.8A TO220-3

Infineon Technologies

4,682 -
RFQ
SPP08P06PHXKSA1

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 300mOhm @ 6.2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 420 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
SPP15N65C3HKSA1

SPP15N65C3HKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies

8,765 -
RFQ
SPP15N65C3HKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP15P10PGHKSA1

SPP15P10PGHKSA1

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies

3,782 -
RFQ
SPP15P10PGHKSA1

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 240mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48 nC @ 10 V ±20V 1280 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
SPP15P10PLGHKSA1

SPP15P10PLGHKSA1

MOSFET P-CH 100V 15A TO220-3

Infineon Technologies

6,613 -
RFQ
SPP15P10PLGHKSA1

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 200mOhm @ 11.3A, 10V 2V @ 1.54mA 62 nC @ 10 V ±20V 1490 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
SPP24N60CFDHKSA1

SPP24N60CFDHKSA1

MOSFET N-CH 650V 21.7A TO220-3

Infineon Technologies

3,722 -
RFQ
SPP24N60CFDHKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 21.7A (Tc) 10V 185mOhm @ 15.4A, 10V 5V @ 1.2mA 143 nC @ 10 V ±20V 3160 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPS03N60C3BKMA1

SPS03N60C3BKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies

4,770 -
RFQ
SPS03N60C3BKMA1

Datenblatt

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-11
SPU03N60C3BKMA1

SPU03N60C3BKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies

2,683 -
RFQ
SPU03N60C3BKMA1

Datenblatt

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
SPW07N60CFDFKSA1

SPW07N60CFDFKSA1

MOSFET N-CH 650V 6.6A TO247-3

Infineon Technologies

5,105 -
RFQ
SPW07N60CFDFKSA1

Datenblatt

CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.6A (Tc) 10V 700mOhm @ 4.6A, 10V 5V @ 300µA 47 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
MTM982400BBF

MTM982400BBF

MOSFET N-CH 40V 7A SO8-F1-B

Panasonic Electronic Components

7,479 -
RFQ
MTM982400BBF

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 7A (Ta) 5V, 10V 23mOhm @ 7A, 10V 2.5V @ 1mA - ±20V 1750 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount SO8-F1-B
IRF1324SPBF

IRF1324SPBF

MOSFET N-CH 24V 195A D2PAK

Infineon Technologies

4,078 -
RFQ
IRF1324SPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF6218SPBF

IRF6218SPBF

MOSFET P-CH 150V 27A D2PAK

Infineon Technologies

3,954 -
RFQ
IRF6218SPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) - - - Surface Mount D2PAK
IRF8734PBF

IRF8734PBF

MOSFET N-CH 30V 21A 8SO

Infineon Technologies

5,535 -
RFQ
IRF8734PBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.5mOhm @ 21A, 10V 2.35V @ 50µA 30 nC @ 4.5 V ±20V 3175 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFS3004-7PPBF

IRFS3004-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

5,815 -
RFQ
IRFS3004-7PPBF

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.25mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9130 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFS3004PBF

IRFS3004PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

2,470 -
RFQ
IRFS3004PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 195A (Ta) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFS4020PBF

IRFS4020PBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies

8,907 -
RFQ
IRFS4020PBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 105mOhm @ 11A, 10V 4.9V @ 100µA 29 nC @ 10 V ±20V 1200 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFS4115-7PPBF

IRFS4115-7PPBF

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies

3,123 -
RFQ
IRFS4115-7PPBF

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFS4115PBF

IRFS4115PBF

MOSFET N-CH 150V 195A D2PAK

Infineon Technologies

2,895 -
RFQ
IRFS4115PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 150 V 195A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFS4127PBF

IRFS4127PBF

MOSFET N-CH 200V 72A D2PAK

Infineon Technologies

3,105 -
RFQ
IRFS4127PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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