FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IRFS4615PBF

IRFS4615PBF

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies

4,844 -
RFQ
IRFS4615PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFS5615PBF

IRFS5615PBF

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies

4,903 -
RFQ
IRFS5615PBF

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLR3636PBF

IRLR3636PBF

MOSFET N-CH 60V 50A DPAK

Infineon Technologies

7,986 -
RFQ
IRLR3636PBF

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IRLS3034-7PPBF

IRLS3034-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

7,219 -
RFQ
IRLS3034-7PPBF

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRLS3034PBF

IRLS3034PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

2,137 -
RFQ
IRLS3034PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLS3036PBF

IRLS3036PBF

MOSFET N-CH 60V 195A D2PAK

Infineon Technologies

3,027 -
RFQ
IRLS3036PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRLS4030-7PPBF

IRLS4030-7PPBF

MOSFET N-CH 100V 190A D2PAK

Infineon Technologies

6,728 -
RFQ
IRLS4030-7PPBF

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRLS4030PBF

IRLS4030PBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies

6,558 -
RFQ
IRLS4030PBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 4.5V, 10V 4.3mOhm @ 110A, 10V 2.5V @ 250µA 130 nC @ 4.5 V ±16V 11360 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF1324LPBF

IRF1324LPBF

MOSFET N-CH 24V 195A TO262

Infineon Technologies

2,609 -
RFQ
IRF1324LPBF

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF1324STRLPBF

IRF1324STRLPBF

MOSFET N-CH 24V 195A D2PAK

Infineon Technologies

7,368 -
RFQ
IRF1324STRLPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFB3307ZGPBF

IRFB3307ZGPBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies

3,015 -
RFQ
IRFB3307ZGPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 5.8mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFB4110GPBF

IRFB4110GPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies

6,972 -
RFQ
IRFB4110GPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFB4115GPBF

IRFB4115GPBF

MOSFET N-CH 150V 104A TO220AB

Infineon Technologies

7,817 -
RFQ
IRFB4115GPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 104A (Tc) 10V 11mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFB4321GPBF

IRFB4321GPBF

MOSFET N-CH 150V 83A TO220AB

Infineon Technologies

8,168 -
RFQ
IRFB4321GPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFB4410ZGPBF

IRFB4410ZGPBF

MOSFET N-CH 100V 97A TO220AB

Infineon Technologies

7,391 -
RFQ
IRFB4410ZGPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFSL3004PBF

IRFSL3004PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies

2,450 -
RFQ
IRFSL3004PBF

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Ta) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFSL4020PBF

IRFSL4020PBF

MOSFET N-CH 200V 18A TO262

Infineon Technologies

4,079 -
RFQ
IRFSL4020PBF

Datenblatt

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 105mOhm @ 11A, 10V 4.9V @ 100µA 29 nC @ 10 V ±20V 1200 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRFSL4115PBF

IRFSL4115PBF

MOSFET N-CH 150V 195A TO262

Infineon Technologies

3,045 -
RFQ
IRFSL4115PBF

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 195A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRLSL3034PBF

IRLSL3034PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies

8,988 -
RFQ
IRLSL3034PBF

Datenblatt

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
FCPF22N60NT

FCPF22N60NT

MOSFET N-CH 600V 22A TO220F

onsemi

9,806 -
RFQ
FCPF22N60NT

Datenblatt

SupreMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA 45 nC @ 10 V ±45V 1950 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer