FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO262-3

Infineon Technologies

9,293 -
RFQ
IPI90R1K2C3XKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI90R340C3XKSA1

IPI90R340C3XKSA1

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies

9,824 -
RFQ
IPI90R340C3XKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI90R500C3XKSA1

IPI90R500C3XKSA1

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies

3,242 -
RFQ
IPI90R500C3XKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPI90R800C3XKSA1

IPI90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO262-3

Infineon Technologies

8,739 -
RFQ
IPI90R800C3XKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPP06CN10LGXKSA1

IPP06CN10LGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

7,969 -
RFQ
IPP06CN10LGXKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 6.2mOhm @ 100A, 10V 2.4V @ 180µA 124 nC @ 10 V ±20V 11900 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP070N08N3 G

IPP070N08N3 G

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies

3,628 -
RFQ
IPP070N08N3 G

Datenblatt

OptiMOS™ 3 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP093N06N3GXKSA1

IPP093N06N3GXKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies

8,235 -
RFQ
IPP093N06N3GXKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9.3mOhm @ 50A, 10V 4V @ 34µA 36 nC @ 10 V ±20V 2900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP100N04S204AKSA1

IPP100N04S204AKSA1

MOSFET N-CH 40V 100A TO220-3

Infineon Technologies

4,290 -
RFQ
IPP100N04S204AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.6mOhm @ 80A, 10V 4V @ 250µA 172 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP100N06S2L05AKSA1

IPP100N06S2L05AKSA1

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies

2,745 -
RFQ
IPP100N06S2L05AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP139N08N3 G

IPP139N08N3 G

MOSFET N-CH 80V 45A TO220-3

Infineon Technologies

6,857 -
RFQ
IPP139N08N3 G

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP22N03S4L15AKSA1

IPP22N03S4L15AKSA1

MOSFET N-CH 30V 22A TO220-3

Infineon Technologies

8,049 -
RFQ
IPP22N03S4L15AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.9mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP230N06L3 G

IPP230N06L3 G

MOSFET N-CH 60V 30A TO220-3

Infineon Technologies

9,677 -
RFQ
IPP230N06L3 G

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 23mOhm @ 30A, 10V 2.2V @ 11µA 10 nC @ 4.5 V ±20V 1600 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP260N06N3GXKSA1

IPP260N06N3GXKSA1

MOSFET N-CH 60V 27A TO220-3

Infineon Technologies

6,237 -
RFQ
IPP260N06N3GXKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 27A (Tc) 10V 26mOhm @ 27A, 10V 4V @ 11µA 15 nC @ 10 V ±20V 1200 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP47N10S33AKSA1

IPP47N10S33AKSA1

MOSFET N-CH 100V 47A TO220-3

Infineon Technologies

8,156 -
RFQ
IPP47N10S33AKSA1

Datenblatt

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 33mOhm @ 33A, 10V 4V @ 2mA 105 nC @ 10 V ±20V 2500 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R140CPHKSA1

IPP50R140CPHKSA1

MOSFET N-CH 550V 23A TO220-3

Infineon Technologies

4,071 -
RFQ
IPP50R140CPHKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R399CPHKSA1

IPP50R399CPHKSA1

MOSFET N-CH 560V 9A TO220-3

Infineon Technologies

9,884 -
RFQ
IPP50R399CPHKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 560 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP50R520CPHKSA1

IPP50R520CPHKSA1

MOSFET N-CH 550V 7.1A TO220-3

Infineon Technologies

3,210 -
RFQ
IPP50R520CPHKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 550 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
IPP60R520CPXKSA1

IPP60R520CPXKSA1

MOSFET N-CH 650V 6.8A TO220-3

Infineon Technologies

8,396 -
RFQ
IPP60R520CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 340µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP60R600CPXKSA1

IPP60R600CPXKSA1

MOSFET N-CH 600V 6.1A TO220-3

Infineon Technologies

6,350 -
RFQ
IPP60R600CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPP70N04S307AKSA1

IPP70N04S307AKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

4,565 -
RFQ
IPP70N04S307AKSA1

Datenblatt

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
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