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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP90R800C3XKSA1

    IPP90R800C3XKSA1

    MOSFET N-CH 900V 6.9A TO220-3

    Infineon Technologies

    		 2,132 -
    RFQ
    		IPP90R800C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    IPS12CN10LGBKMA1

    IPS12CN10LGBKMA1

    MOSFET N-CH 100V 69A TO251-3

    Infineon Technologies

    		 8,384 -
    RFQ
    		IPS12CN10LGBKMA1

    Datenblatt

         		OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 4.5V, 10V 11.8mOhm @ 69A, 10V 2.4V @ 83µA 58 nC @ 10 V ±20V 5600 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
    IPU135N08N3 G

    IPU135N08N3 G

    MOSFET N-CH 80V 50A TO251-3

    Infineon Technologies

    		 9,526 -
    RFQ
    		IPU135N08N3 G

    Datenblatt

         		OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 6V, 10V 13.5mOhm @ 50A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3
    IPW50R199CPFKSA1

    IPW50R199CPFKSA1

    MOSFET N-CH 550V 17A TO247-3

    Infineon Technologies

    		 4,478 -
    RFQ
    		IPW50R199CPFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 550 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW50R299CPFKSA1

    IPW50R299CPFKSA1

    MOSFET N-CH 550V 12A TO247-3

    Infineon Technologies

    		 7,813 -
    RFQ
    		IPW50R299CPFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 550 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW50R350CPFKSA1

    IPW50R350CPFKSA1

    MOSFET N-CH 550V 10A TO247-3

    Infineon Technologies

    		 7,630 -
    RFQ
    		IPW50R350CPFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 550 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW60R250CP

    IPW60R250CP

    MOSFET N-CH 650V 12A TO247-3

    Infineon Technologies

    		 4,711 -
    RFQ
    		IPW60R250CP

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 440µA 35 nC @ 10 V ±20V 1200 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW90R1K0C3FKSA1

    IPW90R1K0C3FKSA1

    MOSFET N-CH 900V 5.7A TO247-3

    Infineon Technologies

    		 6,665 -
    RFQ
    		IPW90R1K0C3FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW90R1K2C3FKSA1

    IPW90R1K2C3FKSA1

    MOSFET N-CH 900V 5.1A TO247-3

    Infineon Technologies

    		 9,194 -
    RFQ
    		IPW90R1K2C3FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW90R340C3FKSA1

    IPW90R340C3FKSA1

    MOSFET N-CH 900V 15A TO247-3

    Infineon Technologies

    		 7,975 -
    RFQ
    		IPW90R340C3FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW90R500C3FKSA1

    IPW90R500C3FKSA1

    MOSFET N-CH 900V 11A TO247-3

    Infineon Technologies

    		 2,294 -
    RFQ
    		IPW90R500C3FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    IPW90R800C3FKSA1

    IPW90R800C3FKSA1

    MOSFET N-CH 900V 6.9A TO247-3

    Infineon Technologies

    		 9,547 -
    RFQ
    		IPW90R800C3FKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
    SN7002W L6327

    SN7002W L6327

    MOSFET N-CH 60V 230MA SOT323-3

    Infineon Technologies

    		 6,851 -
    RFQ
    		SN7002W L6327

    Datenblatt

         		SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 5Ohm @ 230mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
    SN7002W L6433

    SN7002W L6433

    MOSFET N-CH 60V 230MA SOT323-3

    Infineon Technologies

    		 3,616 -
    RFQ
    		SN7002W L6433

    Datenblatt

         		SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 5Ohm @ 230mA, 10V 1.8V @ 26µA 1.5 nC @ 10 V ±20V 45 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
    SPA07N60CFDXKSA1

    SPA07N60CFDXKSA1

    MOSFET N-CH 650V 6.6A TO220-FP

    Infineon Technologies

    		 3,526 -
    RFQ
    		SPA07N60CFDXKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.6A (Tc) 10V 700mOhm @ 4.6A, 10V 5V @ 300µA 47 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
    SPA15N65C3XKSA1

    SPA15N65C3XKSA1

    MOSFET N-CH 650V 15A TO220-3

    Infineon Technologies

    		 4,782 -
    RFQ
    		SPA15N65C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
    SPD30N03S2L10GBTMA1

    SPD30N03S2L10GBTMA1

    MOSFET N-CH 30V 30A TO252-3

    Infineon Technologies

    		 3,335 -
    RFQ
    		SPD30N03S2L10GBTMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 50µA 41.8 nC @ 10 V ±20V 1550 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    SPD50N03S2L06GBTMA1

    SPD50N03S2L06GBTMA1

    MOSFET N-CH 30V 50A TO252-3

    Infineon Technologies

    		 8,327 -
    RFQ
    		SPD50N03S2L06GBTMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    SPI11N60CFDHKSA1

    SPI11N60CFDHKSA1

    MOSFET N-CH 650V 11A TO262-3

    Infineon Technologies

    		 5,633 -
    RFQ
    		SPI11N60CFDHKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 440mOhm @ 7A, 10V 5V @ 500µA 64 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    SPI15N60CFDHKSA1

    SPI15N60CFDHKSA1

    MOSFET N-CH 650V 13.4A TO262-3

    Infineon Technologies

    		 9,184 -
    RFQ
    		SPI15N60CFDHKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.4A (Tc) 10V 330mOhm @ 9.4A, 10V 5V @ 750µA 84 nC @ 10 V ±20V 1820 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
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