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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPI032N06N3 G

    IPI032N06N3 G

    MOSFET N-CH 60V 120A TO262-3

    Infineon Technologies

    		 5,260 -
    RFQ
    		IPI032N06N3 G

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI037N06L3GHKSA1

    IPI037N06L3GHKSA1

    MOSFET N-CH 60V 90A TO262-3

    Infineon Technologies

    		 3,919 -
    RFQ
    		IPI037N06L3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 3.7mOhm @ 90A, 10V 2.2V @ 93µA 79 nC @ 4.5 V ±20V 13000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI037N08N3GHKSA1

    IPI037N08N3GHKSA1

    MOSFET N-CH 80V 100A TO262-3

    Infineon Technologies

    		 9,817 -
    RFQ
    		IPI037N08N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.75mOhm @ 100A, 10V 3.5V @ 155µA 117 nC @ 10 V ±20V 8110 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI040N06N3GHKSA1

    IPI040N06N3GHKSA1

    MOSFET N-CH 60V 90A TO262-3

    Infineon Technologies

    		 3,328 -
    RFQ
    		IPI040N06N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 98 nC @ 10 V ±20V 11000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI100N08N3GHKSA1

    IPI100N08N3GHKSA1

    MOSFET N-CH 80V 70A TO262-3

    Infineon Technologies

    		 9,192 -
    RFQ
    		IPI100N08N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 10mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI100N08S207AKSA1

    IPI100N08S207AKSA1

    MOSFET N-CH 75V 100A TO262-3

    Infineon Technologies

    		 9,974 -
    RFQ
    		IPI100N08S207AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI139N08N3GHKSA1

    IPI139N08N3GHKSA1

    MOSFET N-CH 80V 45A TO262-3

    Infineon Technologies

    		 4,294 -
    RFQ
    		IPI139N08N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 6V, 10V 13.9mOhm @ 45A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1730 pF @ 40 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI200N15N3 G

    IPI200N15N3 G

    MOSFET N-CH 150V 50A TO262-3

    Infineon Technologies

    		 5,550 -
    RFQ
    		IPI200N15N3 G

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 8V, 10V 20mOhm @ 50A, 10V 4V @ 90µA 31 nC @ 10 V ±20V 1820 pF @ 75 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI22N03S4L15AKSA1

    IPI22N03S4L15AKSA1

    MOSFET N-CH 30V 22A TO262-3

    Infineon Technologies

    		 4,867 -
    RFQ
    		IPI22N03S4L15AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.9mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI50CN10NGHKSA1

    IPI50CN10NGHKSA1

    MOSFET N-CH 100V 20A TO262-3

    Infineon Technologies

    		 5,686 -
    RFQ
    		IPI50CN10NGHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI50R399CPXKSA1

    IPI50R399CPXKSA1

    MOSFET N-CH 500V 9A TO262-3

    Infineon Technologies

    		 3,831 -
    RFQ
    		IPI50R399CPXKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
    IPI60R520CPAKSA1

    IPI60R520CPAKSA1

    MOSFET N-CH 600V 6.8A TO262-3

    Infineon Technologies

    		 8,095 -
    RFQ
    		IPI60R520CPAKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 340µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
    IPI70N04S307AKSA1

    IPI70N04S307AKSA1

    MOSFET N-CH 40V 80A TO262-3

    Infineon Technologies

    		 2,985 -
    RFQ
    		IPI70N04S307AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI70N10S312AKSA1

    IPI70N10S312AKSA1

    MOSFET N-CH 100V 70A TO262-3

    Infineon Technologies

    		 4,638 -
    RFQ
    		IPI70N10S312AKSA1

    Datenblatt

         		OptiMOS™ T TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 66 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI80N03S4L03AKSA1

    IPI80N03S4L03AKSA1

    MOSFET N-CH 30V 80A TO262-3

    Infineon Technologies

    		 4,239 -
    RFQ
    		IPI80N03S4L03AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI80N04S306AKSA1

    IPI80N04S306AKSA1

    MOSFET N-CH 40V 80A TO262-3

    Infineon Technologies

    		 5,278 -
    RFQ
    		IPI80N04S306AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI80N06S208AKSA1

    IPI80N06S208AKSA1

    MOSFET N-CH 55V 80A TO262-3

    Infineon Technologies

    		 3,676 -
    RFQ
    		IPI80N06S208AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI80N06S2L05AKSA1

    IPI80N06S2L05AKSA1

    MOSFET N-CH 55V 80A TO262-3

    Infineon Technologies

    		 8,546 -
    RFQ
    		IPI80N06S2L05AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI80N06S2L11AKSA1

    IPI80N06S2L11AKSA1

    MOSFET N-CH 55V 80A TO262-3

    Infineon Technologies

    		 5,704 -
    RFQ
    		IPI80N06S2L11AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 60A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI90R1K0C3XKSA1

    IPI90R1K0C3XKSA1

    MOSFET N-CH 900V 5.7A TO262-3

    Infineon Technologies

    		 8,881 -
    RFQ
    		IPI90R1K0C3XKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
    Total 36284 Record«Prev1... 15871588158915901591159215931594...1815Next»
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