FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
BSR316PL6327HTSA1

BSR316PL6327HTSA1

MOSFET P-CH 100V 360MA SC59

Infineon Technologies

6,616 -
RFQ
BSR316PL6327HTSA1

Datenblatt

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 100 V 360mA (Ta) 4.5V, 10V 1.8Ohm @ 360mA, 10V 1V @ 170µA 7 nC @ 10 V ±20V 165 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SC59-3
BSR92PL6327HTSA1

BSR92PL6327HTSA1

MOSFET P-CH 250V 140MA SC59

Infineon Technologies

5,641 -
RFQ
BSR92PL6327HTSA1

Datenblatt

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 250 V 140mA (Ta) 2.8V, 10V 11Ohm @ 140mA, 10V 1V @ 130µA 4.8 nC @ 10 V ±20V 109 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SC59-3
BSS138W L6327

BSS138W L6327

MOSFET N-CH 60V 280MA SOT323-3

Infineon Technologies

6,356 -
RFQ
BSS138W L6327

Datenblatt

SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 4.5V, 10V 3.5Ohm @ 220mA, 10V 1.4V @ 26µA 1.5 nC @ 10 V ±20V 43 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
BSS138W L6433

BSS138W L6433

MOSFET N-CH 60V 280MA SOT323-3

Infineon Technologies

4,859 -
RFQ
BSS138W L6433

Datenblatt

SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 280mA (Ta) 4.5V, 10V 3.5Ohm @ 220mA, 10V 1.4V @ 26µA 1.5 nC @ 10 V ±20V 43 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
BSS209PW L6327

BSS209PW L6327

MOSFET P-CH 20V 580MA SOT323-3

Infineon Technologies

3,229 -
RFQ
BSS209PW L6327

Datenblatt

OptiMOS™ SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 580mA (Ta) 2.5V, 4.5V 550mOhm @ 580mA, 4.5V 1.2V @ 3.5µA 1.38 nC @ 4.5 V ±12V 89.9 pF @ 15 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
BSS214NW L6327

BSS214NW L6327

MOSFET N-CH 20V 1.5A SOT323-3

Infineon Technologies

7,569 -
RFQ
BSS214NW L6327

Datenblatt

OptiMOS™ SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 140mOhm @ 1.5A, 4.5V 1.2V @ 3.7µA 0.8 nC @ 5 V ±12V 143 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
BSS84PW L6327

BSS84PW L6327

MOSFET P-CH 60V 150MA SOT323-3

Infineon Technologies

2,158 -
RFQ
BSS84PW L6327

Datenblatt

SIPMOS® SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 60 V 150mA (Ta) 4.5V, 10V 8Ohm @ 150mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19.1 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT323
IPA028N08N3GXKSA1

IPA028N08N3GXKSA1

MOSFET N-CH 80V 89A TO220-FP

Infineon Technologies

2,083 -
RFQ
IPA028N08N3GXKSA1

Datenblatt

OptiMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 6V, 10V 2.8mOhm @ 89A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
IPA100N08N3GXKSA1

IPA100N08N3GXKSA1

MOSFET N-CH 80V 40A TO220-FP

Infineon Technologies

9,940 -
RFQ
IPA100N08N3GXKSA1

Datenblatt

OptiMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 40A (Tc) 6V, 10V 10mOhm @ 40A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 35W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
IPA50R399CPXKSA1

IPA50R399CPXKSA1

MOSFET N-CH 500V 9A TO220-FP

Infineon Technologies

9,454 -
RFQ
IPA50R399CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPA60R520CPXKSA1

IPA60R520CPXKSA1

MOSFET N-CH 600V 6.8A TO220-FP

Infineon Technologies

7,450 -
RFQ
IPA60R520CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 31 nC @ 10 V ±20V 630 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPA60R600CPXKSA1

IPA60R600CPXKSA1

MOSFET N-CH 600V 6.1A TO220-FP

Infineon Technologies

6,889 -
RFQ
IPA60R600CPXKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPA90R1K0C3XKSA1

IPA90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO220-FP

Infineon Technologies

2,094 -
RFQ
IPA90R1K0C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA90R340C3XKSA1

IPA90R340C3XKSA1

MOSFET N-CH 900V 15A TO220-FP

Infineon Technologies

3,804 -
RFQ
IPA90R340C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA90R500C3XKSA1

IPA90R500C3XKSA1

MOSFET N-CH 900V 11A TO220-FP

Infineon Technologies

2,738 -
RFQ
IPA90R500C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPA90R800C3XKSA1

IPA90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO220-FP

Infineon Technologies

8,278 -
RFQ
IPA90R800C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPB021N06N3GATMA1

IPB021N06N3GATMA1

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies

7,175 -
RFQ
IPB021N06N3GATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB022N04LGATMA1

IPB022N04LGATMA1

MOSFET N-CH 40V 90A D2PAK

Infineon Technologies

9,045 -
RFQ
IPB022N04LGATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 90A, 10V 2V @ 95µA 166 nC @ 10 V ±20V 13000 pF @ 20 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB023N06N3GATMA1

IPB023N06N3GATMA1

MOSFET N-CH 60V 140A TO263-7

Infineon Technologies

5,697 -
RFQ
IPB023N06N3GATMA1

Datenblatt

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 140A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 141µA 198 nC @ 10 V ±20V 16000 pF @ 30 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IPB034N06N3GATMA1

IPB034N06N3GATMA1

MOSFET N-CH 60V 100A TO263-7

Infineon Technologies

7,353 -
RFQ
IPB034N06N3GATMA1

Datenblatt

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 4V @ 93µA 130 nC @ 10 V ±20V 11000 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer