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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    2SJ610(TE16L1,NQ)

    2SJ610(TE16L1,NQ)

    MOSFET P-CH 250V 2A PW-MOLD

    Toshiba Semiconductor and Storage

    		 6,685 -
    RFQ
    		2SJ610(TE16L1,NQ)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 250 V 2A (Ta) 10V 2.55Ohm @ 1A, 10V 3.5V @ 1mA 24 nC @ 10 V ±20V 381 pF @ 10 V - 20W (Ta) 150°C (TJ) - - Surface Mount PW-MOLD
    2SJ681(Q)

    2SJ681(Q)

    MOSFET P-CH 60V 5A PW-MOLD2

    Toshiba Semiconductor and Storage

    		 4,257 -
    RFQ
    		2SJ681(Q)

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 170mOhm @ 2.5A, 10V 2V @ 1mA 15 nC @ 10 V ±20V 700 pF @ 10 V - 20W (Ta) 150°C (TJ) - - Through Hole PW-MOLD2
    2SK2507(F)

    2SK2507(F)

    MOSFET N-CH 50V 25A TO220NIS

    Toshiba Semiconductor and Storage

    		 7,232 -
    RFQ
    		2SK2507(F)

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 25A (Ta) 4V, 10V 46mOhm @ 12A, 10V 2V @ 1mA 25 nC @ 10 V ±20V 900 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220NIS
    2SK2544(F)

    2SK2544(F)

    MOSFET N-CH 600V 6A TO220AB

    Toshiba Semiconductor and Storage

    		 5,388 -
    RFQ
    		2SK2544(F)

    Datenblatt

         		- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Ta) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 1300 pF @ 10 V - 80W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    2SK2744(F)

    2SK2744(F)

    MOSFET N-CH 50V 45A TO3P

    Toshiba Semiconductor and Storage

    		 3,246 -
    RFQ
    		2SK2744(F)

    Datenblatt

         		- TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50 V 45A (Ta) 10V 20mOhm @ 25A, 10V 3.5V @ 1mA 68 nC @ 10 V ±20V 2300 pF @ 10 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    2SK2866(F)

    2SK2866(F)

    MOSFET N-CH 600V 10A TO220AB

    Toshiba Semiconductor and Storage

    		 6,064 -
    RFQ
    		2SK2866(F)

    Datenblatt

         		- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Ta) 10V 750mOhm @ 5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2040 pF @ 10 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    2SK3342(TE16L1,NQ)

    2SK3342(TE16L1,NQ)

    MOSFET N-CH 250V 4.5A PW-MOLD

    Toshiba Semiconductor and Storage

    		 2,582 -
    RFQ
    		2SK3342(TE16L1,NQ)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V 3.5V @ 1mA 10 nC @ 10 V ±20V 440 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Surface Mount PW-MOLD
    2SK3388(TE24L,Q)

    2SK3388(TE24L,Q)

    MOSFET N-CH 250V 20A 4TFP

    Toshiba Semiconductor and Storage

    		 8,718 -
    RFQ
    		2SK3388(TE24L,Q)

    Datenblatt

         		- SC-97 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 105mOhm @ 10A, 10V 3.5V @ 1mA 100 nC @ 10 V ±20V 4000 pF @ 10 V - 125W (Tc) 150°C (TJ) - - Surface Mount 4-TFP (9.2x9.2)
    2SK3462(TE16L1,NQ)

    2SK3462(TE16L1,NQ)

    MOSFET N-CH 250V 3A PW-MOLD

    Toshiba Semiconductor and Storage

    		 9,848 -
    RFQ
    		2SK3462(TE16L1,NQ)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3A (Ta) 10V 1.7Ohm @ 1.5A, 10V 3.5V @ 1mA 12 nC @ 10 V ±20V 267 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Surface Mount PW-MOLD
    2SK3466(TE24L,Q)

    2SK3466(TE24L,Q)

    MOSFET N-CH 500V 5A 4TFP

    Toshiba Semiconductor and Storage

    		 5,083 -
    RFQ
    		2SK3466(TE24L,Q)

    Datenblatt

         		- SC-97 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.5Ohm @ 5A, 10V 4V @ 1mA 17 nC @ 10 V ±30V 780 pF @ 10 V - 50W (Tc) 150°C (TJ) - - Surface Mount 4-TFP (9.2x9.2)
    2SK3844(Q)

    2SK3844(Q)

    MOSFET N-CH 60V 45A TO220NIS

    Toshiba Semiconductor and Storage

    		 9,874 -
    RFQ
    		2SK3844(Q)

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 10V 5.8mOhm @ 23A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 12400 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220NIS
    2SK3868(Q,M)

    2SK3868(Q,M)

    MOSFET N-CH 500V 5A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,120 -
    RFQ
    		2SK3868(Q,M)

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4V @ 1mA 16 nC @ 10 V ±30V 550 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    2SK3906(Q)

    2SK3906(Q)

    MOSFET N-CH 600V 20A TO3P

    Toshiba Semiconductor and Storage

    		 8,979 -
    RFQ
    		2SK3906(Q)

    Datenblatt

         		- TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 330mOhm @ 10A, 10V 4V @ 1mA 60 nC @ 10 V ±30V 4250 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    2SK4016(Q)

    2SK4016(Q)

    MOSFET N-CH 600V 13A TO220SIS

    Toshiba Semiconductor and Storage

    		 2,536 -
    RFQ
    		2SK4016(Q)

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 500mOhm @ 6.5A, 10V 4V @ 1mA 62 nC @ 10 V ±30V 3100 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    2SK4017(Q)

    2SK4017(Q)

    MOSFET N-CH 60V 5A PW-MOLD2

    Toshiba Semiconductor and Storage

    		 7,745 -
    RFQ
    		2SK4017(Q)

    Datenblatt

         		U-MOSIII TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4V, 10V 100mOhm @ 2.5A, 10V 2.5V @ 1mA 15 nC @ 10 V ±20V 730 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
    2SK4021(Q)

    2SK4021(Q)

    MOSFET N-CH 250V 4.5A PW-MOLD2

    Toshiba Semiconductor and Storage

    		 5,117 -
    RFQ
    		2SK4021(Q)

    Datenblatt

         		- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.5A (Ta) 10V 1Ohm @ 2.5A, 10V 3.5V @ 1mA 10 nC @ 10 V ±20V 440 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
    TPC8026(TE12L,Q,M)

    TPC8026(TE12L,Q,M)

    MOSFET N-CH 30V 13A 8SOP

    Toshiba Semiconductor and Storage

    		 8,352 -
    RFQ
    		TPC8026(TE12L,Q,M)

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 6.6mOhm @ 6.5A, 10V 2.5V @ 1mA 42 nC @ 10 V ±20V 1800 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPC8036-H(TE12L,QM

    TPC8036-H(TE12L,QM

    MOSFET N-CH 30V 18A 8SOP

    Toshiba Semiconductor and Storage

    		 8,406 -
    RFQ
    		TPC8036-H(TE12L,QM

    Datenblatt

         		U-MOSVI-H 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.5mOhm @ 9A, 10V 2.3V @ 1mA 49 nC @ 10 V ±20V 4600 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPCA8036-H(TE12L,Q

    TPCA8036-H(TE12L,Q

    MOSFET N-CH 30V 38A 8SOP

    Toshiba Semiconductor and Storage

    		 6,978 -
    RFQ
    		TPCA8036-H(TE12L,Q

    Datenblatt

         		U-MOSVI-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Ta) 4.5V, 10V 4.2mOhm @ 19A, 10V 2.3V @ 500µA 50 nC @ 10 V ±20V 4600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    TPCA8A02-H(TE12LQM

    TPCA8A02-H(TE12LQM

    MOSFET N-CH 30V 34A 8SOP

    Toshiba Semiconductor and Storage

    		 7,670 -
    RFQ
    		TPCA8A02-H(TE12LQM

    Datenblatt

         		U-MOSV-H 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 5.3mOhm @ 17A, 10V 2.3V @ 1mA 36 nC @ 10 V ±20V 3430 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
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