TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche CMPA601C025F CGHV96100F2 CGHV96130F AP3012KTR-E1 SMBJ43A-13-F DMN4034SSS-13 FMMT495QTA BZX84-B36-QR SD103AW-7-F DFLU1200-7
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPD160N04LGBTMA1

    IPD160N04LGBTMA1

    MOSFET N-CH 40V 30A TO252-3

    Infineon Technologies

    		 4,739 -
    RFQ
    		IPD160N04LGBTMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 2V @ 10µA 15 nC @ 10 V ±20V 1200 pF @ 20 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPD170N04NGBTMA1

    IPD170N04NGBTMA1

    MOSFET N-CH 40V 30A TO252-3

    Infineon Technologies

    		 5,536 -
    RFQ
    		IPD170N04NGBTMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 17mOhm @ 30A, 10V 4V @ 10µA 11 nC @ 10 V ±20V 880 pF @ 20 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPD250N06N3GBTMA1

    IPD250N06N3GBTMA1

    MOSFET N-CH 60V 28A TO252-3

    Infineon Technologies

    		 3,463 -
    RFQ
    		IPD250N06N3GBTMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 28A (Tc) 10V 25mOhm @ 28A, 10V 4V @ 11µA 15 nC @ 10 V ±20V 1200 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPD25CNE8N G

    IPD25CNE8N G

    MOSFET N-CH 85V 35A TO252-3

    Infineon Technologies

    		 6,708 -
    RFQ
    		IPD25CNE8N G

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 85 V 35A (Tc) 10V 25mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 40 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPD25N06S240ATMA1

    IPD25N06S240ATMA1

    MOSFET N-CH 55V 29A TO252-3

    Infineon Technologies

    		 5,150 -
    RFQ
    		IPD25N06S240ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 13A, 10V 4V @ 26µA 18 nC @ 10 V ±20V 513 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD26N06S2L35ATMA1

    IPD26N06S2L35ATMA1

    MOSFET N-CH 55V 30A TO252-3

    Infineon Technologies

    		 3,626 -
    RFQ
    		IPD26N06S2L35ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 35mOhm @ 13A, 10V 2V @ 26µA 24 nC @ 10 V ±20V 621 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD30N03S2L07ATMA1

    IPD30N03S2L07ATMA1

    MOSFET N-CH 30V 30A TO252-3

    Infineon Technologies

    		 8,683 -
    RFQ
    		IPD30N03S2L07ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 1900 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD30N06S2-15

    IPD30N06S2-15

    MOSFET N-CH 55V 30A TO252-3

    Infineon Technologies

    		 6,537 -
    RFQ
    		IPD30N06S2-15

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 14.7mOhm @ 30A, 10V 4V @ 80µA 110 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD30N06S223ATMA1

    IPD30N06S223ATMA1

    MOSFET N-CH 55V 30A TO252-3

    Infineon Technologies

    		 4,635 -
    RFQ
    		IPD30N06S223ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 23mOhm @ 21A, 10V 4V @ 50µA 32 nC @ 10 V ±20V 901 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD30N06S2L-13

    IPD30N06S2L-13

    MOSFET N-CH 55V 30A TO252-3

    Infineon Technologies

    		 9,567 -
    RFQ
    		IPD30N06S2L-13

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD33CN10NGBUMA1

    IPD33CN10NGBUMA1

    MOSFET N-CH 100V 27A TO252-3

    Infineon Technologies

    		 7,928 -
    RFQ
    		IPD33CN10NGBUMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 27A (Tc) 10V 33mOhm @ 27A, 10V 4V @ 29µA 24 nC @ 10 V ±20V 1570 pF @ 50 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    IPD50N06S214ATMA1

    IPD50N06S214ATMA1

    MOSFET N-CH 55V 50A TO252-3

    Infineon Technologies

    		 8,942 -
    RFQ
    		IPD50N06S214ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 10V 14.4mOhm @ 32A, 10V 4V @ 80µA 52 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD50N06S2L13ATMA1

    IPD50N06S2L13ATMA1

    MOSFET N-CH 55V 50A TO252-3

    Infineon Technologies

    		 2,924 -
    RFQ
    		IPD50N06S2L13ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 4.5V, 10V 12.7mOhm @ 34A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD50P03P4L11ATMA1

    IPD50P03P4L11ATMA1

    MOSFET P-CH 30V 50A TO252-3

    Infineon Technologies

    		 9,797 -
    RFQ
    		IPD50P03P4L11ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10.5mOhm @ 50A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD70N04S3-07

    IPD70N04S3-07

    MOSFET N-CH 40V 82A TO252-3

    Infineon Technologies

    		 6,211 -
    RFQ
    		IPD70N04S3-07

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 10V 6mOhm @ 70A, 10V 4V @ 50µA 40 nC @ 10 V ±20V 2700 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD80N06S3-09

    IPD80N06S3-09

    MOSFET N-CH 55V 80A TO252-3

    Infineon Technologies

    		 7,665 -
    RFQ
    		IPD80N06S3-09

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.4mOhm @ 40A, 10V 4V @ 55µA 88 nC @ 10 V ±20V 6100 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    IPD90P03P4L04ATMA1

    IPD90P03P4L04ATMA1

    MOSFET P-CH 30V 90A TO252-3

    Infineon Technologies

    		 9,691 -
    RFQ
    		IPD90P03P4L04ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4.1mOhm @ 90A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
    IPI024N06N3GHKSA1

    IPI024N06N3GHKSA1

    MOSFET N-CH 60V 120A TO262-3

    Infineon Technologies

    		 7,462 -
    RFQ
    		IPI024N06N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI028N08N3GHKSA1

    IPI028N08N3GHKSA1

    MOSFET N-CH 80V 100A TO262-3

    Infineon Technologies

    		 6,235 -
    RFQ
    		IPI028N08N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.8mOhm @ 100A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPI030N10N3GHKSA1

    IPI030N10N3GHKSA1

    MOSFET N-CH 100V 100A TO262-3

    Infineon Technologies

    		 6,793 -
    RFQ
    		IPI030N10N3GHKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    Total 36284 Record«Prev1... 15861587158815891590159115921593...1815Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135